Noriyuki Taoka 研究室

主宰者：Noriyuki Taoka

名古屋大学

AI 要約（直近 5 年の研究成果）

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研究成果（58 件）

[2026] Data Assimilation Between Experimental and Crystal Growth Simulation on REBCO Thin Films
DOI: https://doi.org/10.1109/tasc.2026.3662287
[2026] Quantitative Analysis of Surface Potential Fluctuation at MOS Interfaces Using Conductance Method
DOI: https://doi.org/10.1109/ted.2025.3649624
[2025] Low-power hydrogen sensing with a nickel-silicide nanosheet formed on SiO 2
DOI: https://doi.org/10.35848/1347-4065/ae1e86
[2025] Control of Electrostatic Charge Generated during Two‐Fluid Spraying of Pure Water Using an Inductive Charging Method
DOI: https://doi.org/10.1002/tee.70095
[2025] Data assimilation between Monte Carlo simulation and experimental results of crystal growth island density in REBCO thin films during the initial growth stages.
DOI: https://doi.org/10.1088/1742-6596/3054/1/012020
[2025] Fabrication of YBCO/LaNiO3/STO multilayer for cost reduction of REBCO superconducting wires
DOI: https://doi.org/10.1088/1742-6596/3054/1/012018
[2025] Construction of a monitoring system for ablation plumes during YBCO thin film deposition by PLD method
DOI: https://doi.org/10.1088/1742-6596/3054/1/012019
[2025] Crystalline phase transition of ultra-thin Ni-silicide film during SiH4 exposure
DOI: https://doi.org/10.35848/1347-4065/adaafc
[2024] Monte Carlo Study on Crystal Growth of BMO-Doped REBCO Films Affected by Growth Conditions
DOI: https://doi.org/10.1109/tasc.2024.3512529
[2024] Photoemission Study on Si and Ge Segregation on Al/Si0.8Ge0.2 Structures
DOI: https://doi.org/10.1149/ma2024-02322336mtgabs

続きを表示（残り 48 件）

[2024] メガヘルツ周波数範囲のクォーツトランスデューサー超音波洗浄機を使用したポリスチレンラテックス粒子の除去の評価
DOI: https://doi.org/10.1149/ma2024-02312276mtgabs
[2024] Red-color-modulated perovskite solar cells with copper(I) thiocyanate/cellulose acetate-based distributed Bragg reflectors
DOI: https://doi.org/10.35848/1347-4065/ad8b55
[2024] Evaluating the Removal of Polystyrene Latex Particles Using the Quartz Transducer Ultrasonic Cleaners in the Megahertz Frequency Range
DOI: https://doi.org/10.1149/11401.0083ecst
[2024] Photoemission Study on Si and Ge Segregation on Al/Si0.8Ge0.2 Structures
DOI: https://doi.org/10.1149/11402.0177ecst
[2024] Crystalline Phase Transition of Ultra-thin Ni-silicide Film during SiH4 Exposure
DOI: https://doi.org/10.7567/ssdm.2024.m-5-03
[2024] Minority Carrier Distribution and Response at Inversion Bias Conditions in MOS Capacitor with Si/SiGe Multi-Quantum Well Structure
DOI: https://doi.org/10.7567/ssdm.2024.ps-11-11
[2024] Impacts of Mechanical Uniaxial Stress on Mobility Enhancement of 4H-SiC Trench MOSFET
DOI: https://doi.org/10.7567/ssdm.2024.ps-04-19
[2024] Study of dot size effect on electron emission from Si-QDs multiple-stacked structures
DOI: https://doi.org/10.35848/1347-4065/ad759b
[2024] Doping Behavior and Electrical Conduction of Spiro-MeOTAD Films
DOI: https://doi.org/10.23919/am-fpd61635.2024.10615378
[2024] Formation of one-dimensionally self-aligned Si-QDs and their local electron discharging properties
DOI: https://doi.org/10.35848/1347-4065/ad38f7
[2024] Electron emission from alignment-controlled multiple stacks of SiGe nanodots embedded in Si structures
DOI: https://doi.org/10.1016/j.mssp.2024.108227
[2024] Formation of Al-incorporated SiC thin films by chemical vapor deposition of vinylsilane mixed with trimethylaluminum
DOI: https://doi.org/10.35848/1347-4065/ad2134
[2023] Formation of β-FeSi2 nanodots by SiH4 exposure to Fe nanodots
DOI: https://doi.org/10.35848/1347-4065/ad1898
[2023] Formation of ultra-thin nickel silicide on SiO2 using Si/Ni/Si structures for oxidation control
DOI: https://doi.org/10.35848/1347-4065/ad1777
[2023] Formation of b–FeSi 2 NDs by SiH 4–Exposure to Fe–NDs
DOI: https://doi.org/10.7567/ssdm.2023.m-7-02
[2023] Si Diffusion Control by Inserting SiO 2 Layer at Hf-Oxide/Si Interface for Transforming Hf-Oxide Crystalline Phase
DOI: https://doi.org/10.7567/ssdm.2023.m-7-03
[2023] Evaluation of Si and Ge Segregation from Si 0.2Ge 0.8(111) through Al and Ag Layer
DOI: https://doi.org/10.7567/ssdm.2023.a-3-03
[2023] Formation of One-Dimensionally Self-Aligned Si-QDs and Their Local Electron Charging Properties
DOI: https://doi.org/10.7567/ssdm.2023.m-3-04
[2023] Impact of Dot Size on Electron Emission from Multiple-Stacked Si-QDs
DOI: https://doi.org/10.7567/ssdm.2023.ps-11-02
[2023] Formation of Ultra-thin Nickel Silicide on SiO2 Using a-Si/Ni/a-Si Structures for Oxidation Control
DOI: https://doi.org/10.7567/ssdm.2023.ps-11-15
[2023] Impact of O 2 annealing on Chemical States of Mg doped GaN(0001) Surface
DOI: https://doi.org/10.7567/ssdm.2023.n-1-05
[2023] Room Temperature Light Emission from Superatom-like Ge–Core/Si–Shell Quantum Dots
DOI: https://doi.org/10.3390/nano13091475
[2023] Alignment control of self-assembling Si quantum dots
DOI: https://doi.org/10.1016/j.mssp.2023.107526
[2023] Layer transfer of ultrathin Ge crystal segregated on Al/Ge(111) structure
DOI: https://doi.org/10.35848/1347-4065/acb65c
[2023] Evaluation of chemical structure and Si segregation of Al/Si(111)
DOI: https://doi.org/10.35848/1347-4065/acb1fd
[2022] Formation of ultra-thin NiGe film with single crystalline phase and smooth surface
DOI: https://doi.org/10.35848/1347-4065/acac6f
[2022] Evaluation of Chemical Structure and Si Segregation of Al/Si(111)
DOI: https://doi.org/10.7567/ssdm.2022.b-8-02
[2022] Formation of Ultra-thin NiGe film with Mono-crystalline Phase and Smooth Surface
DOI: https://doi.org/10.7567/ssdm.2022.b-6-06
[2022] Effects of Cl passivation on Al2O3/GaN interface properties
DOI: https://doi.org/10.35848/1347-4065/ac73d9
[2022] Study on Electron Emission from Phosphorus δ-Doped Si-QDs/Undoped Si-QDs Multiple-Stacked Structures
DOI: https://doi.org/10.1587/transele.2021fup0006
[2022] Magnetic-Field Dependent Electron Transport of Fe3Si Nanodots
DOI: https://doi.org/10.1587/transele.2021fup0007
[2022] Study on silicidation reaction of Fe nanodots with SiH4
DOI: https://doi.org/10.35848/1882-0786/ac6727
[2022] Characterization of electronic charged states of high density self-aligned Si-based quantum dots evaluated with AFM/Kelvin probe technique
DOI: https://doi.org/10.35848/1347-4065/ac61aa
[2022] Impact of substrate heating during Al deposition and post annealing on surface morphology, Al crystallinity, and Ge segregation in Al/Ge(111) structure
DOI: https://doi.org/10.35848/1347-4065/ac5fbc
[2022] SiO 2 /GaN interfaces with low defect densities and high breakdown electric fields formed by plasma-enhanced atomic layer deposition
DOI: https://doi.org/10.35848/1347-4065/ac4f79
[2021] Impact of oxide/4H-SiC interface state density on field-effect mobility of counter-doped n-channel 4H-SiC MOSFETs
DOI: https://doi.org/10.35848/1347-4065/ac4555
[2021] SiO2/n-GaN MOS structures with low interface state density formed by plasma-enhanced atomic layer deposition method
DOI: https://doi.org/10.7567/ssdm.2021.d-7-06
[2021] Study on Electron Emission from Phosphorus delta-Doped Si-QDs/Undoped Si-QDs Multiple-Stacked Structures
DOI: https://doi.org/10.7567/ssdm.2021.k-2-01
[2021] Effect of substrate temperature on plasma-enhanced self-assembling formation of high-density FePt nanodots
DOI: https://doi.org/10.35848/1347-4065/ac2036
[2021] Segregation control for ultrathin Ge layer in Al/Ge(111) system
DOI: https://doi.org/10.35848/1347-4065/ac19ff
[2021] Characterization of Electronic Charged States of High Density Self-aligned Si-based Quantum Dots Evaluated with AFM/Kelvin Prove Technique
[2021] Impact of Substrate Heating on Surface Flattening and Ge Segregaion of Al/Ge(111)
[2021] Impact of gate electrode formation process on Al2O3/GaN interface properties and channel mobility
DOI: https://doi.org/10.35848/1882-0786/ac0ffa
[2021] Formation and Thickness Control of Ultrathin Ge Layer on Al and Ag/(111) Structures by Thermal Anneal
[2021] Formation and Characterization of Ge1–x–ySixSny/Ge Heterojunction Structures for Photovoltaic Cell Application
DOI: https://doi.org/10.1149/ma2021-01342044mtgabs
[2021] Formation and Characterization of Ge1–x–ySixSny/Ge Heterojunction Structures for Photovoltaic Cell Application
DOI: https://doi.org/10.1149/10204.0003ecst
[2021] Effects of chemical cleaning with HCl Solution on Al 2 O 3 /GaN interface properties
[2021] Surface flattening and Ge crystalline segregation of Ag/Ge structure by thermal anneal
DOI: https://doi.org/10.35848/1347-4065/abdad0

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AI 要約（直近 5 年の研究成果）

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研究成果（58 件）

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