Atsushi Oshiyama 研究室

AI 要約（直近 5 年の研究成果）

※ AI（Claude）が、公開されている論文要旨から研究の問い・手法・主要な発見を事実情報として抽出・再構成して自動生成しています。誤りを含む可能性があるため、正確性は研究室公式情報でご確認ください。

研究成果（29 件）

• [2025] Atomic and electronic structures of point defects related to vacancy-mediated mechanism of Mg diffusion in GaN
  DOI: https://doi.org/10.35848/1347-4065/ae2174
• [2025] Space-induced floating electronic states in non-stoichiometric amorphous silicon nitride for memory devices applications
  DOI: https://doi.org/10.1103/mc16-76ck
• [2025] Structure of the very first atomic layer of Ga oxide on GaN at GaN oxidation front
  DOI: https://doi.org/10.1063/5.0274521
• [2025] Boron as a passivating dopant of oxygen-vacancy-induced hole traps at GaN/SiO₂ interface
  DOI: https://doi.org/10.35848/1882-0786/adece5
• [2025] Optimizing SiN Composition for Enhanced Charge-Trapping in Next-Generation 3D NAND Flash Memories
  DOI: https://doi.org/10.1109/edtm61175.2025.11040340
• [2025] Misfit accommodation in a single interface atomic layer at a highly lattice-mismatched InN/GaN
  DOI: https://doi.org/10.1063/5.0231584
• [2025] Silicon-Richness Impact for Enhanced Charge-Trapping in 3D NAND Flash Memories
  DOI: https://doi.org/10.1109/jeds.2025.3638173
• [2024] Passivation mechanisms of oxygen-vacancy-induced hole traps by Mg acceptor atoms at GaN/SiO2 interface
  DOI: https://doi.org/10.1063/5.0223569
• [2024] Microscopic mechanisms of nitrogen doping in silicon carbide during epitaxial growth
  DOI: https://doi.org/10.35848/1882-0786/ad524c
• [2024] Theoretical study of the influence of GaOx interfacial layer on the GaN/SiO2 interface property
  DOI: https://doi.org/10.1063/5.0204285

科研費（0 件）

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所属学会・役職（0 件）

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