Markus Pristovsek 研究室

主宰者：Markus Pristovsek

名古屋大学

AI 要約（直近 5 年の研究成果）

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研究成果（37 件）

[2026] The Origin of Efficiency in III‐Nitride Micro‐Light‐Emitting Diodes
DOI: https://doi.org/10.1002/advs.202520738
[2025] Micro-light emitting diodes: effects of size, contact schemes, V pits, and dislocations
DOI: https://doi.org/10.1117/12.3038433
[2025] Role of Sidewall Conditions in the External Quantum Efficiency of InGaN‐Based Micro‐LEDs
DOI: https://doi.org/10.1002/pssr.202500042
[2025] N-polar AlN-based enhancement-mode transistor with p-NiO x gate stacks and reduced buffer trapping
DOI: https://doi.org/10.1088/1361-6463/ae161c
[2025] Highly Oriented Epitaxial Hexagonal Boron Nitride Multilayers on High‐Temperature‐Resistant Single‐Crystal Aluminum Nitride (0001)
DOI: https://doi.org/10.1002/advs.202509354
[2025] Wavelength-tailored and dislocation-free InGaN nanoplatelets as pseudo-substrates fabricated by selective etching and regrowth
DOI: https://doi.org/10.35848/1347-4065/ae303f
[2025] SiN interlayer to improve external quantum efficiency and reduce sidewall recombination for blue (micro) light-emitting diodes
DOI: https://doi.org/10.1063/5.0272825
[2024] Recent advances in micro-pixel light emitting diode technology
DOI: https://doi.org/10.1063/5.0177550
[2024] InGaN-based blue and red micro-LEDs: Impact of carrier localization
DOI: https://doi.org/10.1063/5.0195261
[2024] Growth and Characterization of High Internal Quantum Efficiency Semipolar (1013) GaN-Based Light Emitting Diodes
DOI: https://doi.org/10.1021/acsaelm.4c01312

続きを表示（残り 27 件）

[2024] Discovering the incorporation limits for wurtzite AlPyN1−y grown on GaN by metalorganic vapor phase epitaxy
DOI: https://doi.org/10.1063/5.0225115
[2024] Discovering the incorporation limits for wurtzite AlPyN1−y grown on GaN by metalorganic vapor phase epitaxy
[2024] Two-Dimensional Electron Gas in Thin N-Polar GaN Channels on AlN on Sapphire Templates
DOI: https://doi.org/10.3390/cryst14090822
[2024] The Growth of N-polar AlN for Electronic Applications
DOI: https://doi.org/10.7567/ssdm.2024.h-1-01
[2024] How to Make Semi‐Polar InGaN Light Emitting Diodes with High Internal Quantum Efficiency: The Importance of the Internal Field
DOI: https://doi.org/10.1002/lpor.202400529
[2023] Impact of Sidewall Conditions on Internal Quantum Efficiency and Light Extraction Efficiency of Micro‐LEDs (Advanced Optical Materials 10/2023)
DOI: https://doi.org/10.1002/adom.202370029
[2023] Impact of Sidewall Conditions on Internal Quantum Efficiency and Light Extraction Efficiency of Micro‐LEDs
DOI: https://doi.org/10.1002/adom.202203128
[2023] 2D-GaN/AlN Multiple Quantum Disks/Quantum Well Heterostructures for High-Power Electron-Beam Pumped UVC Emitters
DOI: https://doi.org/10.3390/nano13061077
[2023] Red emission from InGaN active layer grown on nanoscale InGaN pseudosubstrates
DOI: https://doi.org/10.35848/1347-4065/acb74c
[2023] Anisotropic hole transport along [0001] and [112¯0] direction in p-doped (101¯0) GaN
DOI: https://doi.org/10.1063/5.0177681
[2023] Droop and light extraction of InGaN-based red micro-light-emitting diodes
DOI: https://doi.org/10.1088/1361-6641/ad0b88
[2023] Impact of graphene state on the orientation of III–nitride
DOI: https://doi.org/10.1063/5.0157588
[2023] Growth of N-Polar (0001) GaN in Metal–Organic Vapour Phase Epitaxy on Sapphire
DOI: https://doi.org/10.3390/cryst13071072
[2023] Stress relaxation of AlGaN on nonpolar m-plane GaN substrate
DOI: https://doi.org/10.1063/5.0149838
[2023] Dislocation Suppresses Sidewall‐Surface Recombination of Micro‐LEDs
DOI: https://doi.org/10.1002/lpor.202300199
[2022] Understanding indium incorporation of InGaN grown on polar, semi-polar, and non-polar orientation by metal–organic vapor phase epitaxy
DOI: https://doi.org/10.1063/5.0088908
[2022] Direct Determination of the Internal Quantum Efficiency of Light‐Emitting Diodes
DOI: https://doi.org/10.1002/pssr.202200331
[2022] Defect characterization of {101¯3} GaN by electron microscopy
DOI: https://doi.org/10.1063/5.0077084
[2022] High In content nitride sub-micrometer platelet arrays for long wavelength optical applications
DOI: https://doi.org/10.1063/5.0120723
[2022] Wurtzite Al1−xGaxPyN1−y barrier layer growth for high electron mobility transistors
[2022] Wurtzite Al<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" altimg="si54.svg" display="inline" id="d1e510"><mml:msub><mml:mrow/><mml:mrow><mml:mn>1</mml:mn><mml:mo>−</mml:mo><mml:mi>x</mml:mi></mml:mrow></mml:msub></mml:math>Ga<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" altimg="si53.svg" display="inline" id="d1e522"><mml:msub><mml:mrow/><mml:mrow><mml:mi>x</mml:mi></mml:mrow></mml:msub></mml:math>P<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" altimg="si15.svg" display="inline" id="d1e530"><mml:msub><mml:mrow/><mml:mrow><mml:mi>y</mml:mi></mml:mrow></mml:msub></mml:math>N<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" altimg="si16.svg" display="inline" id="d1e539"><mml:msub><mml:mrow/><mml:mrow><mml:mn>1</mml:mn><mml:mo>−</mml:mo><mml:mi>y</mml:mi></mml:mrow></mml:msub></mml:math> barrier layer growth for high electron mobility transistors
DOI: https://doi.org/10.1016/j.jcrysgro.2022.126908
[2021] Strain-induced yellow to blue emission tailoring of axial InGaN/GaN quantum wells in GaN nanorods synthesized by nanoimprint lithography
DOI: https://doi.org/10.1038/s41598-021-86139-9
[2021] The stability of graphene and boron nitride for III-nitride epitaxy and post-growth exfoliation
DOI: https://doi.org/10.1039/d1sc01642c
[2021] X-ray characterisation of the basal stacking fault densities of (1122) GaN
DOI: https://doi.org/10.1039/d1ce00627d
[2021] The Effect of Interface Diffusion on Raman Spectra of Wurtzite Short-Period GaN/AlN Superlattices
DOI: https://doi.org/10.3390/nano11092396
[2021] High-Resolution Mass Spectrometry Analysis of the Reactions Between Trimethylgallium and Ammonia in GaN MOVPE Using Hydrogen Isotope Labeling
[2021] Comparative Analysis of Decomposition of TMGa and TEGa for the Clarification of the Mechanism of Unintentional Carbon Incorporation in GaN MOVPE Growth

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AI 要約（直近 5 年の研究成果）

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研究成果（37 件）

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