Shugo Nitta 研究室

主宰者：Shugo Nitta

名古屋大学

AI 要約（直近 5 年の研究成果）

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研究成果（51 件）

[2026] Photon emission enhancement of lanthanoid ions implanted in gallium nitride nanostructures
DOI: https://doi.org/10.1117/12.3082564
[2026] Controlling impurity concentration profiles in p–n and n–p junctions by halide vapor phase epitaxy with n/p-separated nozzles
DOI: https://doi.org/10.1063/5.0325320
[2026] Photon emission enhancement of lanthanoid ions implanted in gallium nitride nanostructures
[2025] Modeling and Designing a GaN-Growth Reactor With Halogen-Free Vapor Phase Epitaxy: NH3 Decomposition at the Catalytic Surface of Components to Replicate Parasitic Polycrystal Formation
DOI: https://doi.org/10.1109/tsm.2025.3558328
[2025] Characterization of Quaternary Al x Ga 1−(x+y) In y N ( x ≈ 0.5 and y ≤ 0.12) Metalorganic Vapor Phase Epitaxy Growth Focusing on Unintentionally Incorporated Impurities
DOI: https://doi.org/10.1002/pssb.202500028
[2025] Chemical vapor deposition of compound semiconductors: process simulation and experimental validation
DOI: https://doi.org/10.35848/1882-0786/ae2f19
[2025] Highly Oriented Epitaxial Hexagonal Boron Nitride Multilayers on High‐Temperature‐Resistant Single‐Crystal Aluminum Nitride (0001)
DOI: https://doi.org/10.1002/advs.202509354
[2025] On‐State Current Increasing Structure of Source‐Connected Polarization Superjunction Transistor
DOI: https://doi.org/10.1002/pssa.202500046
[2024] Impurity reduction in lightly doped n-type gallium nitride layer grown via halogen-free vapor-phase epitaxy
DOI: https://doi.org/10.1063/5.0191774
[2024] Effect of Substrate Carrier Concentration on Conductivity Modulation in GaN
DOI: https://doi.org/10.7567/ssdm.2024.d-7-03

続きを表示（残り 41 件）

[2024] Sn-doped n-type GaN freestanding layer: Thermodynamic study and fabrication by halide vapor phase epitaxy
DOI: https://doi.org/10.1016/j.jcrysgro.2024.127923
[2023] Sn-doped n-type GaN layer with high electron density of 1020 cm−3 grown by halide vapor phase epitaxy
DOI: https://doi.org/10.1016/j.jcrysgro.2023.127529
[2023] GaN Vertical p-n Junction Diode on GaN Substrate Grown by Na-Flux Method with Avalanche Capability and Demonstration of 100 A (pulsed) Operation
DOI: https://doi.org/10.7567/ssdm.2023.n-1-04
[2023] Investigation of Electrical Properties of N‐Polar AlGaN/AlN Heterostructure Field‐Effect Transistors
DOI: https://doi.org/10.1002/pssa.202200871
[2023] Lateral p-type GaN Schottky barrier diode with annealed Mg ohmic contact layer demonstrating ideal current–voltage characteristic
DOI: https://doi.org/10.1063/5.0146080
[2023] Numerical simulation and validation of carbon incorporation in GaN epitaxial growth by MOVPE method
DOI: https://doi.org/10.1299/jsmecmd.2023.36.os-1406
[2023] Red emission from InGaN active layer grown on nanoscale InGaN pseudosubstrates
DOI: https://doi.org/10.35848/1347-4065/acb74c
[2023] Impacts of off-angle and off-direction on surface morphology of GaN grown by metalorganic vapor phase epitaxy on (0001) GaN substrate
DOI: https://doi.org/10.1016/j.jcrysgro.2023.127552
[2023] Optical activation of praseodymium ions implanted in gallium nitride after ultra-high pressure annealing
DOI: https://doi.org/10.1016/j.nimb.2023.165181
[2022] Space–Charge Profiles and Carrier Transport Properties in Dopant‐Free GaN‐Based p‐n Junction Formed by Distributed Polarization Doping
DOI: https://doi.org/10.1002/pssr.202200127
[2022] Improved device performance of vertical GaN-on-GaN nanorod Schottky barrier diodes with wet-etching process
DOI: https://doi.org/10.1063/5.0083194
[2022] Mechanism and enhancement of anti-parasitic-reaction catalytic activity of tungsten-carbide-coated graphite components for the growth of bulk GaN crystals
DOI: https://doi.org/10.35848/1882-0786/ac5ba4
[2022] Effect of beam current on defect formation by high-temperature implantation of Mg ions into GaN
DOI: https://doi.org/10.35848/1882-0786/ac481b
[2022] Photon extraction enhancement of praseodymium ions in gallium nitride nanopillars
DOI: https://doi.org/10.1038/s41598-022-25522-6
[2022] High In content nitride sub-micrometer platelet arrays for long wavelength optical applications
DOI: https://doi.org/10.1063/5.0120723
[2022] Substitutional diffusion of Mg into GaN from GaN/Mg mixture
DOI: https://doi.org/10.35848/1882-0786/ac9c83
[2022] Beyond ab initio reaction simulator: An application to GaN metalorganic vapor phase epitaxy
DOI: https://doi.org/10.1063/5.0119783
[2022] Tuning the p-type doping of GaN over three orders of magnitude via efficient Mg doping during halide vapor phase epitaxy
DOI: https://doi.org/10.1063/5.0122292
[2022] Surface kinetics in halide vapor phase epitaxial growth of GaN layers on GaN (0001) freestanding substrates
DOI: https://doi.org/10.1016/j.jcrysgro.2022.126749
[2022] “Regrowth-free” fabrication of high-current-gain AlGaN/GaN heterojunction bipolar transistor with N-p-n configuration
DOI: https://doi.org/10.35848/1882-0786/ac6197
[2022] An Accurate Approach to Develop Small Signal Circuit Models for AlGaN/GaN HEMTs Using Rational Functions and Dependent Current Sources
DOI: https://doi.org/10.1109/jeds.2022.3208028
[2022] Surface Kinetics in Halide Vapor Phase Epitaxial Growth of Gan Layers on Gan (0001) Freestanding Substrates
DOI: https://doi.org/10.2139/ssrn.4097952
[2021] Experimental demonstration of GaN IMPATT diode at X-band
[2021] Fabrication of AlGaN/GaN HBT with Continuous-grown N-p-n Junctions
[2021] Modified Small Signal Circuit of AlGaN/GaN MOS-HEMTs Using Rational Functions
DOI: https://doi.org/10.1109/ted.2021.3119528
[2021] Vertical GaN p+-n junction diode with ideal avalanche capability grown by halide vapor phase epitaxy
DOI: https://doi.org/10.1063/5.0066139
[2021] “Regrowth-free” Fabrication of AlGaN/GaN HBT with N-p-n Configuration
DOI: https://doi.org/10.7567/ssdm.2021.d-1-05
[2021] [Young Scientist Presentation Award Speech] Effect of beam current on the formation of defects by high-temperature implantation of Mg ions into GaN
[2021] Nanoscale Thermometry Based on Photoluminescence from Praseodymium Ions in Gallium Nitride Semiconductor
[2021] [Young Scientist Presentation Award Speech] Electrical properties and structural defects of p-type GaN layers with various Mg concentration grown by HVPE
[2021] High-Resolution Mass Spectrometry Analysis of the Reactions Between Trimethylgallium and Ammonia in GaN MOVPE Using Hydrogen Isotope Labeling
[2021] Impact of gate electrode formation process on Al2O3/GaN interface properties and channel mobility
DOI: https://doi.org/10.35848/1882-0786/ac0ffa
[2021] Experimental demonstration of GaN IMPATT diode at X-band
DOI: https://doi.org/10.35848/1882-0786/abe3dc
[2021] Ohmic contact on low-doping-density p-type GaN with nitrogen-annealed Mg
DOI: https://doi.org/10.1063/5.0076764
[2021] Vertical GaN-on-GaN nanowire Schottky barrier diodes by top-down fabrication approach
DOI: https://doi.org/10.35848/1347-4065/ac06b5
[2021] Electrical properties and structural defects of p-type GaN layers grown by halide vapor phase epitaxy
DOI: https://doi.org/10.1016/j.jcrysgro.2021.126173
[2021] Suppression of the regrowth interface leakage current in AlGaN/GaN HEMTs by unactivated Mg doped GaN layer
DOI: https://doi.org/10.1063/5.0034584
[2021] Fabrication of GaN cantilever on GaN substrate by photo-electrochemical etching
DOI: https://doi.org/10.35848/1882-0786/abe657
[2021] Progress in Modeling Compound Semiconductor Epitaxy: Unintentional Doping in GaN MOVPE
DOI: https://doi.org/10.1021/acs.cgd.0c01564
[2021] Electrical and structural properties of p-type GaN layers fabricated by HVPE
[2021] Comparative Analysis of Decomposition of TMGa and TEGa for the Clarification of the Mechanism of Unintentional Carbon Incorporation in GaN MOVPE Growth

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AI 要約（直近 5 年の研究成果）

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研究成果（51 件）

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