Isamu Akasaki 研究室

AI 要約（直近 5 年の研究成果）

※ AI（Claude）が、公開されている論文要旨から研究の問い・手法・主要な発見を事実情報として抽出・再構成して自動生成しています。誤りを含む可能性があるため、正確性は研究室公式情報でご確認ください。

研究成果（44 件）

• [2022] Growth Defects in InGaN‐Based Multiple‐Quantum‐Shell Nanowires with Si‐Doped GaN Cap Layers and Tunnel Junctions
  DOI: https://doi.org/10.1002/pssb.202100221
• [2021] Improved passivation depth of porous fluorescent 6H-SiC with Si/C faces using atomic layer deposition
  DOI: https://doi.org/10.35848/1347-4065/ac43cd
• [2021] MOVPE growth of Si-doped GaN cap layers embedding GaN nanowires with multiple-quantum shells
  DOI: https://doi.org/10.1016/j.jcrysgro.2021.126423
• [2021] Analysis of impurity doping in tunnel junction grown on core–shell structure composed of GaInN/GaN multiple-quantum-shells and GaN nanowire
  DOI: https://doi.org/10.35848/1347-4065/ac3728
• [2021] Morphology Control and Crystalline Quality of p-Type GaN Shells Grown on Coaxial GaInN/GaN Multiple Quantum Shell Nanowires
  DOI: https://doi.org/10.1021/acsami.1c13947
• [2021] Identification of multi-color emission from coaxial GaInN/GaN multiple-quantum-shell nanowire LEDs
  DOI: https://doi.org/10.1039/d1na00299f
• [2021] Reduction of dislocation density in Al0.6Ga0.4N film grown on sapphire substrates using annealed sputtered AlN templates and its effect on UV-B laser diodes
  DOI: https://doi.org/10.1016/j.jcrysgro.2021.126325
• [2021] Emission characteristics of GaInN/GaN multiple quantum shell nanowire‐based LEDs with different <i>p</i> ‐GaN growth conditions
  DOI: https://doi.org/10.1515/nanoph-2021-0210
• [2021] Effects of Mg dopant in Al-composition-graded Al_xGa_1−xN (0.45 ≤ x) on vertical electrical conductivity of ultrawide bandgap AlGaN p–n junction
  DOI: https://doi.org/10.35848/1882-0786/ac1d64
• [2021] Crystal Growth and Characterization of n-GaN in a Multiple Quantum Shell Nanowire-Based Light Emitter with a Tunnel Junction
  DOI: https://doi.org/10.1021/acsami.1c09591

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