Kazuyoshi Tomita 研究室

主宰者：Kazuyoshi Tomita

名古屋大学・Nagoya University Hospital

AI 要約（直近 5 年の研究成果）

要約はまだ生成されていません。

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研究成果（31 件）

[2026] Investigation of Coulomb scattering centers using a substrate bias effect in n -channel metal–oxide–semiconductor field-effect transistors with AlSiO/AlN/ p -type GaN gate structures
DOI: https://doi.org/10.1063/5.0324229
[2026] Negative-bias temperature instability in AlSiO/p-type GaN metal-oxide-semiconductor field-effect transistors with ultrathin AlN interfacial layer
DOI: https://doi.org/10.1063/5.0325347
[2025] Avalanche durability of high-voltage GaN p – n diodes with tunnel junctions as anode contacts
DOI: https://doi.org/10.1063/5.0300544
[2025] Characterization of MOS Channels Having AlSiO/AlN/GaN Gate Structures on m-plane and c-plane: Mobility, Threshold Voltage, and its Stability
DOI: https://doi.org/10.1109/drc66027.2025.11105751
[2025] Depth‐Resolved Photoluminescence for Channeling Implantation of Mg or Mg/N Ions into GaN after Ultra‐High‐Pressure Annealing
DOI: https://doi.org/10.1002/pssb.202500029
[2024] A distinctive bound exciton line induced by electron-beam irradiation and subsequent annealing of an unintentionally doped GaN layer
DOI: https://doi.org/10.35848/1347-4065/ad918a
[2024] Engineered interface charges and traps in GaN MOSFETs providing high channel mobility and E-mode operation
DOI: https://doi.org/10.35848/1347-4065/ad8c4f
[2024] Engineering of Channel Mobility and Threshold Voltage in AlSiO/AlN/p-type GaN Metal–Oxide–Semiconductor Field-Effect Transistors
DOI: https://doi.org/10.7567/ssdm.2024.d-7-01
[2024] High Channel Mobility and Stable E-Mode Operation in AlSiO/AlN/m-Plane P-Type GaN MOSFETs with Little Temperature Dependence of the Threshold Voltage
DOI: https://doi.org/10.1109/iedm50854.2024.10873525
[2024] Rapid Mg substitution to Ga-sites and slow defect recovery revealed by depth-resolved photoluminescence in Mg/N-ion-implanted GaN
DOI: https://doi.org/10.1063/5.0232083

続きを表示（残り 21 件）

[2024] Suppression of positive bias instability by inserting polarized AlN interlayer at AlSiO/p-type GaN interface in metal–oxide–semiconductor field-effect transistor
DOI: https://doi.org/10.1063/5.0214698
[2024] Transport Properties in GaN Metal–Oxide–Semiconductor Field‐Effect Transistor Almost Free of Interface Traps with AlSiO/AlN/p‐Type GaN Gate Stack
DOI: https://doi.org/10.1002/pssr.202400141
[2024] A High Channel Mobility and a Normally‐off Operation of a Vertical GaN Metal‐Oxide‐Semiconductor Field‐Effect Transistors using an AlSiO/AlN Gate Stack Structure on m‐plane Trench Sidewall
DOI: https://doi.org/10.1002/pssr.202400010
[2024] Characterization of Shockley-Read-Hall recombination centers created by proton irradiation into GaN p+/n- and p-/n+ junctions
DOI: https://doi.org/10.1117/12.2691563
[2024] Extraction of gap states in AlSiO/AlN/GaN metal-oxide-semiconductor field-effect transistors using the multi-terminal capacitance–voltage method
DOI: https://doi.org/10.1063/5.0191066
[2024] Depth Analyses of Mg‐Acceptor and Si‐Donor Concentrations in GaN by Combining Stepwise Etching and Photoluminescence
DOI: https://doi.org/10.1002/pssb.202300528
[2023] Reliability issues of gate oxides and $p-n$ junctions for vertical GaN metal–oxide–semiconductor field-effect transistors (Invited)
DOI: https://doi.org/10.1109/irps48203.2023.10118047
[2023] Effects of proton irradiation-induced point defects on Shockley–Read–Hall recombination lifetimes in homoepitaxial GaN p–n junctions
DOI: https://doi.org/10.1063/5.0141781
[2023] Over 200 cm2 V−1 s−1 of electron inversion channel mobility for AlSiO/GaN MOSFET with nitrided interface
DOI: https://doi.org/10.35848/1882-0786/ace33c
[2023] Polarization Engineering in AlSiO/p-type GaN MOSFETs Using AIN Interlayers Formed by Plasma-Enhanced Atomic Layer Deposition
DOI: https://doi.org/10.1109/iedm45741.2023.10413714
[2022] Relationship of carbon concentration and slow decays of photoluminescence in homoepitaxial n-type GaN layers
DOI: https://doi.org/10.35848/1347-4065/ac79ec
[2022] Improvement of Channel Mobility in AlSiO/GaN MOSFETs using Thin Interfacial Layers to Reduce Border Traps
DOI: https://doi.org/10.7567/ssdm.2022.j-6-01
[2022] Identification of type of threading dislocation causing reverse leakage in GaN p–n junctions after continuous forward current stress
DOI: https://doi.org/10.1038/s41598-022-05416-3
[2021] Effect of forward bias application on 0.88 eV hole trap in hydrogen-implanted n + p GaN
[2021] Generation of hole trap in p-GaN layer by forward current injection
[2021] Analysis of intrinsic reverse leakage current resulting from band-to-band tunneling in dislocation-free GaN p–n junctions
DOI: https://doi.org/10.35848/1882-0786/ac2a03
[2021] Photoionization cross section ratio of nitrogen-site carbon in GaN under sub-bandgap-light irradiation determined by isothermal capacitance transient spectroscopy
DOI: https://doi.org/10.35848/1882-0786/ac16ba
[2021] Increase of reverse leakage current at homoepitaxial GaN p-n junctions induced by continuous forward current stress
DOI: https://doi.org/10.1063/5.0053139
[2021] Contribution of the carbon-originated hole trap to slow decays of photoluminescence and photoconductivity in homoepitaxial n-type GaN layers
DOI: https://doi.org/10.1063/5.0041287
[2021] Analysis of channel mobility in GaN-based metal-oxide-semiconductor field-effect transistors
DOI: https://doi.org/10.1063/5.0040700
[2021] Contribution to electrical properties of carrier recombination of Slow decay in GaN epilayers

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AI 要約（直近 5 年の研究成果）

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研究成果（31 件）

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