Tsutomu Uesugi 研究室

AI 要約（直近 5 年の研究成果）

※ AI（Claude）が、公開されている論文要旨から研究の問い・手法・主要な発見を事実情報として抽出・再構成して自動生成しています。誤りを含む可能性があるため、正確性は研究室公式情報でご確認ください。

研究成果（15 件）

• [2025] Estimation of net acceptor activation ratio of channeled-implanted Mg from breakdown voltage analysis of vertical GaN p–n junction diodes with junction termination extension
  DOI: https://doi.org/10.35848/1347-4065/ade753
• [2025] Vertical GaN Junction Barrier Schottky Diodes Fabricated by Using Channeled Implantation of Mg Ions and Ultrahigh-Pressure Annealing
  DOI: https://doi.org/10.1109/ted.2025.3579442
• [2025] Analysis of Acceptor Activation and Lateral Diffusion of Channeled-Implanted Mg Atoms in Vertical GaN Junction Barrier Schottky Diodes
  DOI: https://doi.org/10.23919/ispsd62843.2025.11117439
• [2024] Characterization of Shockley-Read-Hall recombination centers created by proton irradiation into GaN p+/n- and p-/n+ junctions
  DOI: https://doi.org/10.1117/12.2691563
• [2024] Demonstration of recycling process for GaN substrates using laser slicing technique towards cost reduction of GaN vertical power MOSFETs
  DOI: https://doi.org/10.35848/1882-0786/ad269d
• [2023] Design and fabrication of vertical GaN junction barrier Schottky rectifiers using Mg ion implantation
  DOI: https://doi.org/10.35848/1347-4065/acec69
• [2023] Effects of proton irradiation-induced point defects on Shockley–Read–Hall recombination lifetimes in homoepitaxial GaN <i>p</i>–<i>n</i> junctions
  DOI: https://doi.org/10.1063/5.0141781
• [2023] Reliability issues of gate oxides and $p-n$ junctions for vertical GaN metal–oxide–semiconductor field-effect transistors (Invited)
  DOI: https://doi.org/10.1109/irps48203.2023.10118047
• [2022] Mg-implanted vertical GaN junction barrier Schottky rectifiers with low on resistance, low turn-on voltage, and nearly ideal nondestructive breakdown voltage
  DOI: https://doi.org/10.1063/5.0106321
• [2022] Identification of type of threading dislocation causing reverse leakage in GaN p–n junctions after continuous forward current stress
  DOI: https://doi.org/10.1038/s41598-022-05416-3

科研費（0 件）

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所属学会・役職（0 件）

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