Masakazu Kanechika 研究室

AI 要約（直近 5 年の研究成果）

※ AI（Claude）が、公開されている論文要旨から研究の問い・手法・主要な発見を事実情報として抽出・再構成して自動生成しています。誤りを含む可能性があるため、正確性は研究室公式情報でご確認ください。

研究成果（13 件）

• [2025] Characterization of MOS Channels Having AlSiO/AlN/GaN Gate Structures on m-plane and c-plane: Mobility, Threshold Voltage, and its Stability
  DOI: https://doi.org/10.1109/drc66027.2025.11105751
• [2025] A study on the classification of threading dislocations in GaN substrate by spot size using X-ray topography high-resolution image
  DOI: https://doi.org/10.35848/1347-4065/adb406
• [2024] High Channel Mobility and Stable E-Mode Operation in AlSiO/AlN/m-Plane P-Type GaN MOSFETs with Little Temperature Dependence of the Threshold Voltage
  DOI: https://doi.org/10.1109/iedm50854.2024.10873525
• [2024] Engineered interface charges and traps in GaN MOSFETs providing high channel mobility and E-mode operation
  DOI: https://doi.org/10.35848/1347-4065/ad8c4f
• [2024] Engineering of Channel Mobility and Threshold Voltage in AlSiO/AlN/p-type GaN Metal–Oxide–Semiconductor Field-Effect Transistors
  DOI: https://doi.org/10.7567/ssdm.2024.d-7-01
• [2024] A High Channel Mobility and a Normally‐off Operation of a Vertical GaN Metal‐Oxide‐Semiconductor Field‐Effect Transistors using an AlSiO/AlN Gate Stack Structure on <i>m</i>‐plane Trench Sidewall
  DOI: https://doi.org/10.1002/pssr.202400010
• [2024] Characterization of Shockley-Read-Hall recombination centers created by proton irradiation into GaN p+/n- and p-/n+ junctions
  DOI: https://doi.org/10.1117/12.2691563
• [2023] Improvement of AlSiO/GaN interface by a novel post deposition annealing using ultra high pressure
  DOI: https://doi.org/10.35848/1882-0786/ad0ba5
• [2023] Effects of proton irradiation-induced point defects on Shockley–Read–Hall recombination lifetimes in homoepitaxial GaN <i>p</i>–<i>n</i> junctions
  DOI: https://doi.org/10.1063/5.0141781
• [2023] Reliability issues of gate oxides and $p-n$ junctions for vertical GaN metal–oxide–semiconductor field-effect transistors (Invited)
  DOI: https://doi.org/10.1109/irps48203.2023.10118047

科研費（0 件）

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所属学会・役職（0 件）

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