Emi Kano 研究室

AI 要約（直近 5 年の研究成果）

※ AI（Claude）が、公開されている論文要旨から研究の問い・手法・主要な発見を事実情報として抽出・再構成して自動生成しています。誤りを含む可能性があるため、正確性は研究室公式情報でご確認ください。

研究成果（21 件）

• [2026] Electrical activity of Mg clustering at nanoscale defects induced by N ion implantation in GaN
  DOI: https://doi.org/10.48505/nims.6368
• [2026] Electrical activity of Mg clustering at nanoscale defects induced by N ion implantation in GaN
  DOI: https://doi.org/10.1063/5.0335166
• [2025] Structure of the very first atomic layer of Ga oxide on GaN at GaN oxidation front
  DOI: https://doi.org/10.1063/5.0274521
• [2025] Characterization of MOS Channels Having AlSiO/AlN/GaN Gate Structures on m-plane and c-plane: Mobility, Threshold Voltage, and its Stability
  DOI: https://doi.org/10.1109/drc66027.2025.11105751
• [2025] Misfit accommodation in a single interface atomic layer at a highly lattice-mismatched InN/GaN
  DOI: https://doi.org/10.1063/5.0231584
• [2024] Engineering of Channel Mobility and Threshold Voltage in AlSiO/AlN/p-type GaN Metal–Oxide–Semiconductor Field-Effect Transistors
  DOI: https://doi.org/10.7567/ssdm.2024.d-7-01
• [2024] Suppression of positive bias instability by inserting polarized AlN interlayer at AlSiO/<i>p</i>-type GaN interface in metal–oxide–semiconductor field-effect transistor
  DOI: https://doi.org/10.1063/5.0214698
• [2024] Observation of 2D-magnesium-intercalated gallium nitride superlattices
  DOI: https://doi.org/10.1038/s41586-024-07513-x
• [2024] Transport Properties in GaN Metal–Oxide–Semiconductor Field‐Effect Transistor Almost Free of Interface Traps with AlSiO/AlN/p‐Type GaN Gate Stack
  DOI: https://doi.org/10.1002/pssr.202400141
• [2024] Impact of Sequential N Ion Implantation on Extended Defects and Mg Distribution in Mg Ion‐Implanted GaN
  DOI: https://doi.org/10.1002/pssr.202400074

科研費（0 件）

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所属学会・役職（0 件）

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