Shinji Yamada 研究室

AI 要約（直近 5 年の研究成果）

※ AI（Claude）が、公開されている論文要旨から研究の問い・手法・主要な発見を事実情報として抽出・再構成して自動生成しています。誤りを含む可能性があるため、正確性は研究室公式情報でご確認ください。

研究成果（14 件）

• [2025] Depth‐Resolved Photoluminescence for Channeling Implantation of Mg or Mg/N Ions into GaN after Ultra‐High‐Pressure Annealing
  DOI: https://doi.org/10.1002/pssb.202500029
• [2024] Realization of low specific-contact-resistance on N-polar GaN surfaces using heavily-Ge-doped n-type GaN films deposited by low-temperature reactive sputtering technique
  DOI: https://doi.org/10.35848/1882-0786/ad2783
• [2024] Rapid Mg substitution to Ga-sites and slow defect recovery revealed by depth-resolved photoluminescence in Mg/N-ion-implanted GaN
  DOI: https://doi.org/10.1063/5.0232083
• [2024] A distinctive bound exciton line induced by electron-beam irradiation and subsequent annealing of an unintentionally doped GaN layer
  DOI: https://doi.org/10.35848/1347-4065/ad918a
• [2024] Depth Analyses of Mg‐Acceptor and Si‐Donor Concentrations in GaN by Combining Stepwise Etching and Photoluminescence
  DOI: https://doi.org/10.1002/pssb.202300528
• [2022] Social and Regional Innovation Activities Based on the Joint Research Laboratories Embedded in the University
  DOI: https://doi.org/10.1299/jsmemecj.2022.s401-19
• [2021] Breakdown Electric Field of GaN p⁺-n and p-n⁺Junction Diodes With Various Doping Concentrations
  DOI: https://doi.org/10.1109/led.2021.3125328
• [2021] Diffusion of Mg and H atoms in Mg-implanted GaN by ultra-high-pressure annealing
• [2021] Corner Shape Control of GaN Trench Structure Formed by Inductively Coupled Plasma Reactive Ion Etching
  DOI: https://doi.org/10.7567/ssdm.2021.d-7-07
• [2021] Impact ionization coefficients and critical electric field in GaN
  DOI: https://doi.org/10.1063/5.0050793

科研費（0 件）

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所属学会・役職（0 件）

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