Maciej Matys 研究室

AI 要約（直近 5 年の研究成果）

※ AI（Claude）が、公開されている論文要旨から研究の問い・手法・主要な発見を事実情報として抽出・再構成して自動生成しています。誤りを含む可能性があるため、正確性は研究室公式情報でご確認ください。

研究成果（10 件）

• [2025] Vertical GaN Junction Barrier Schottky Diodes Fabricated by Using Channeled Implantation of Mg Ions and Ultrahigh-Pressure Annealing
  DOI: https://doi.org/10.1109/ted.2025.3579442
• [2025] Unusually High‐Density 2D Electron Gases in N‐Polar AlGaN/GaN Heterostructures with GaN/AlN Superlattice Back Barriers Grown on Sapphire Substrates
  DOI: https://doi.org/10.1002/pssr.202400379
• [2024] Study on the Impact of Mg-Channeled Implantation on Junction Termination Extension for GaN Vertical Power Devices Using TCAD Simulation
  DOI: https://doi.org/10.1109/ted.2024.3427103
• [2023] Design and fabrication of vertical GaN junction barrier Schottky rectifiers using Mg ion implantation
  DOI: https://doi.org/10.35848/1347-4065/acec69
• [2022] Mg-implanted vertical GaN junction barrier Schottky rectifiers with low on resistance, low turn-on voltage, and nearly ideal nondestructive breakdown voltage
  DOI: https://doi.org/10.1063/5.0106321
• [2022] Process engineering of GaN power devices via selective-area p-type doping with ion implantation and ultra-high-pressure annealing
  DOI: https://doi.org/10.1063/5.0107921
• [2022] Evidence of reduced interface states in Al₂O₃/AlGaN MIS structures via insertion of ex situ regrown AlGaN layer
  DOI: https://doi.org/10.35848/1882-0786/ac8f13
• [2021] Design and demonstration of nearly-ideal edge termination for GaN p–n junction using Mg-implanted field limiting rings
  DOI: https://doi.org/10.35848/1882-0786/ac0b09
• [2021] Mg-implanted bevel edge termination structure for GaN power device applications
  DOI: https://doi.org/10.1063/5.0039183
• [2021] Effect of Nitrogen Plasma Treatment on Characteristics of GaN Trench MOSFETs

科研費（0 件）

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所属学会・役職（0 件）

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