L. J. Schowalter 研究室

AI 要約（直近 5 年の研究成果）

※ AI（Claude）が、公開されている論文要旨から研究の問い・手法・主要な発見を事実情報として抽出・再構成して自動生成しています。誤りを含む可能性があるため、正確性は研究室公式情報でご確認ください。

研究成果（11 件）

• [2024] Pseudomorphic growth of a thin-GaN layer on the AlN single-crystal substrate using metal organic vapor phase epitaxy
  DOI: https://doi.org/10.35848/1347-4065/ad565a
• [2023] Photon extraction from nitride ultraviolet light-emitting devices
• [2023] Development of Room Temperature Continuous-Wave Deep Ultraviolet Laser Diodes
  DOI: https://doi.org/10.36463/idw.2023.0516
• [2022] Local stress control to suppress dislocation generation for pseudomorphically grown AlGaN UV-C laser diodes
  DOI: https://doi.org/10.1063/5.0124512
• [2022] Continuous-wave lasing of AlGaN-based ultraviolet laser diode at 274.8 nm by current injection
  DOI: https://doi.org/10.35848/1882-0786/ac6198
• [2022] Emission uniformity of UVC laser diodes on AlN substrates
  DOI: https://doi.org/10.1117/12.2604370
• [2022] Key temperature-dependent characteristics of AlGaN-based UV-C laser diode and demonstration of room-temperature continuous-wave lasing
  DOI: https://doi.org/10.1063/5.0124480
• [2021] Threshold increase and lasing inhibition due to hexagonal-pyramid-shaped hillocks in AlGaN-based DUV laser diodes on single-crystal AlN substrate
  DOI: https://doi.org/10.35848/1347-4065/ac3a1d
• [2021] Impact of heat treatment process on threshold current density in AlGaN-based deep-ultraviolet laser diodes on AlN substrate
  DOI: https://doi.org/10.35848/1882-0786/abf443
• [2021] Development of UV-C laser diodes on AlN substrate
  DOI: https://doi.org/10.1117/12.2575872

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