Jun Kojima 研究室

AI 要約（直近 5 年の研究成果）

※ AI（Claude）が、公開されている論文要旨から研究の問い・手法・主要な発見を事実情報として抽出・再構成して自動生成しています。誤りを含む可能性があるため、正確性は研究室公式情報でご確認ください。

研究成果（11 件）

• [2026] Exploring the Ion Implantation Mechanism for Suppressing Stacking Fault Expansion in 4H-SiC: A Fundamental Approach
  DOI: https://doi.org/10.4028/p-knq0l1
• [2025] Which Tile Should I Discard?: Supporting Beginners in Mahjong by Presenting Recommended Discards in Mixed Reality
  DOI: https://doi.org/10.1109/ismar-adjunct68609.2025.00164
• [2024] Demonstration of recycling process for GaN substrates using laser slicing technique towards cost reduction of GaN vertical power MOSFETs
  DOI: https://doi.org/10.35848/1882-0786/ad269d
• [2023] Atomic and Electronic Structures of Basal Plane Dislocations (BPDs) in 4H-SiC -Atomistic Origin of Bipolar Degradation of SiC Devices-
  DOI: https://doi.org/10.7567/ssdm.2023.n-2-05
• [2023] Effect of H₂ addition on growth rate and surface morphology of GaN(0001) grown by halide-vapor-phase epitaxy using GaCl₃
  DOI: https://doi.org/10.35848/1347-4065/acb97b
• [2023] Reliability issues of gate oxides and $p-n$ junctions for vertical GaN metal–oxide–semiconductor field-effect transistors (Invited)
  DOI: https://doi.org/10.1109/irps48203.2023.10118047
• [2022] Identification of type of threading dislocation causing reverse leakage in GaN p–n junctions after continuous forward current stress
  DOI: https://doi.org/10.1038/s41598-022-05416-3
• [2022] Suppression of cluster formation in GaN growth by tri-halide vapor phase epitaxy with external GaCl ₃ gas supply system
  DOI: https://doi.org/10.35848/1347-4065/ac7a7a
• [2021] Management of Common Respiratory Disease during the Coronavirus Disease 2019 Pandemic
  DOI: https://doi.org/10.2169/naika.110.1115
• [2021] Analysis of intrinsic reverse leakage current resulting from band-to-band tunneling in dislocation-free GaN p–n junctions
  DOI: https://doi.org/10.35848/1882-0786/ac2a03

科研費（0 件）

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所属学会・役職（0 件）

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