Yusaku Magari 研究室

主宰者：Yusaku Magari

北海道大学

AI 要約（直近 5 年の研究成果）

要約はまだ生成されていません。

※ AI（Claude）が、公開されている論文要旨から研究の問い・手法・主要な発見を事実情報として抽出・再構成して自動生成しています。誤りを含む可能性があるため、正確性は研究室公式情報でご確認ください。

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研究成果（33 件）

[2026] Electric Field Thermopower Modulation Analyses of Silicon-Doped Tin Oxide-Based Thin-Film Transistors
DOI: https://doi.org/10.1021/acsaelm.5c02638
[2026] Amorphous metal-oxide semiconductor thin-film neuron, synapse, and neuromorphic system
DOI: https://doi.org/10.1038/s41598-026-55218-0
[2025] Reliable Operation in High‐Mobility Indium Oxide Thin Film Transistors (Small Methods 1/2025)
DOI: https://doi.org/10.1002/smtd.202570004
[2025] Toward High-Mobility and High-Reliability Oxide Semiconductor Thin-Film Transistors
DOI: https://doi.org/10.1109/imfedk68916.2025.11353668
[2025] Indium Hydroxide Ceramic Targets: A Breakthrough in High-Mobility Thin-Film Transistor Technology
DOI: https://doi.org/10.1021/acsaelm.5c00829
[2024] High-mobility and high-reliability Zn-incorporated amorphous In2O3-based thin-film transistors
DOI: https://doi.org/10.35848/1347-4065/ad5ee6
[2024] Nucleation and grain growth in low-temperature rapid solid-phase crystallization of hydrogen-doped indium oxide
DOI: https://doi.org/10.35848/1347-4065/ad21ba
[2024] Improvement in the Reliability for Polycrystalline Indium Oxide Based Thin-Film Transistors by Epitaxial Passivation Layers
DOI: https://doi.org/10.36463/idw.2024.0157
[2024] Thermopower modulation analyses of effective channel thickness for Zn-incorporated In2O3-based thin-film transistors
DOI: https://doi.org/10.35848/1347-4065/ad971b
[2024] High-Mobility Indium Oxide Thin Film Transistors with High Reliability
DOI: https://doi.org/10.1149/ma2024-02342386mtgabs

続きを表示（残り 23 件）

[2024] Uniformity and Reliability of Enhancement-Mode Polycrystalline Indium Oxide Thin Film Transistors Formed by Solid-Phase Crystallization
DOI: https://doi.org/10.1109/led.2024.3480991
[2024] High-mobility and high-reliability Zn-incorporated amorphous In2O3-based thin-film transistors
[2023] Improved Electron Transport Properties of Zn-Rich In–Ga–Zn–O Thin-Film Transistors
DOI: https://doi.org/10.1021/acs.jpcc.2c07442
[2022] (Invited, Digital Presentation) Nondegenerate Hydrogen-Doped Polycrystalline Indium Oxide (InOx:H) Thin Films for High-Mobility Thin Film Transistors
DOI: https://doi.org/10.1149/ma2022-02351266mtgabs
[2022] Electric Field Thermopower Modulation Analyses of Effective Channel Thickness of Amorphous InGaO3(ZnO)m Thin Film Transistors
DOI: https://doi.org/10.36463/idw.2022.0198
[2022] Electric Field Thermopower Modulation Analyses of Transistor Characteristics of High-mobility In-Sn-Zn-O Thin Film Transistors
DOI: https://doi.org/10.36463/idw.2022.0128
[2022] High-mobility (>100 cm2V−1s−1) In2O3:H Thin-film Transistors by Solid-phase Crystallization
DOI: https://doi.org/10.36463/idw.2022.0120
[2022] (Invited) Hydrogenated Polycrystalline In2O3 (In2O3:H) Thin-Film Transistor with High Mobility Exceeding 100 cm2V−1s−1 Via Solid-Phase Crystallization
DOI: https://doi.org/10.1149/ma2022-02351277mtgabs
[2022] Thermopower Modulation Analyses of High-Mobility Transparent Amorphous Oxide Semiconductor Thin-Film Transistors
DOI: https://doi.org/10.1021/acsaelm.2c01210
[2022] Characteristics of FD-SOI-MOSFETs using low-temperature sputtering SiO2 gate insulator with high pressure water annealing
DOI: https://doi.org/10.7567/ssdm.2022.e-2-02
[2022] Influence of Grain Boundary Scattering on the Field-Effect Mobility of Solid-Phase Crystallized Hydrogenated Polycrystalline In2O3 (In2O3:H)
DOI: https://doi.org/10.3390/nano12172958
[2022] Solid phase crystallization of hydrogenated indium oxide (InOx:H) for high mobility thin-film transistors
DOI: https://doi.org/10.23919/am-fpd54920.2022.9851313
[2022] High-mobility hydrogenated polycrystalline In2O3 (In2O3:H) thin-film transistors
DOI: https://doi.org/10.1038/s41467-022-28480-9
[2022] Bottom gate single crystal Si thin-film transistors fabricated by all sputtering processes
DOI: https://doi.org/10.35848/1347-4065/ac5812
[2022] Defect Passivation and Carrier Reduction Mechanisms in Hydrogen-Doped In-Ga-Zn-O (IGZO:H) Films upon Low-Temperature Annealing for Flexible Device Applications
DOI: https://doi.org/10.3390/ma15010334
[2021] Nondegenerate Polycrystalline Hydrogen-Doped Indium Oxide (InOx:H) Thin Films Formed by Low-Temperature Solid-Phase Crystallization for Thin Film Transistors
DOI: https://doi.org/10.3390/ma15010187
[2021] [Highlight]High-Performance Hydrogenated In 2 O 3 Thin-film Transistors
[2021] 7‐4: High Mobility Hydrogenated Polycrystalline In‐Ga‐O (IGO:H) Thin‐Film Transistors formed by Solid Phase Crystallization
DOI: https://doi.org/10.1002/sdtp.14612
[2021] P‐12: Activation of IGZO Devices at 150°C via Reduction Process Using Hydrogen Gas During Sputtering
DOI: https://doi.org/10.1002/sdtp.14884
[2021] Investigation of the effect of adding a moderate amount of hydrogen on the properties of tin oxide films deposited by DC magnetron sputtering
DOI: https://doi.org/10.35848/1347-4065/abf49d
[2021] Polycrystalline IGO:H films for high-mobility thin-film transistors
[2021] Hydrogenated In–Ga–Zn–O thin-film transistors with anodized and fluorinated Al 2 O 3 gate insulator for flexible devices
DOI: https://doi.org/10.35848/1347-4065/abdf74
[2021] Effects of water and hydrogen introduction during In–Ga–Zn–O sputtering on the performance of low-temperature processed thin-film transistors
DOI: https://doi.org/10.35848/1347-4065/abd9d2

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AI 要約（直近 5 年の研究成果）

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関連研究室(8 件)

研究成果（33 件）

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