Yoshihiro Kangawa 研究室

主宰者：Yoshihiro Kangawa

九州大学

AI 要約（直近 5 年の研究成果）

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研究成果（33 件）

[2026] Material configurations informatics for semiconductor materials research
DOI: https://doi.org/10.1117/12.3082408
[2026] Intrinsic Step Jamming in Nanometer-Scale KPZ-Like Rough Surfaces under Interface-Limited Crystal Growth and Retreat
DOI: https://doi.org/10.1021/acs.cgd.6c00011
[2026] Modeling indium migration on vicinal GaN(0001): An Ab initio study
DOI: https://doi.org/10.1016/j.susc.2026.122930
[2026] First-principles calculations of effective mass of impurity-doped Ga2O3
DOI: https://doi.org/10.1016/j.jcrysgro.2026.128654
[2025] Kinetic-roughening diagrams between Kardar–Parisi–Zhang–like and Berezinskii–Kosterlitz–Thouless rough surfaces for steady crystal growth
DOI: https://doi.org/10.1038/s41598-025-18250-0
[2025] First-principles molecular dynamics of H2 molecule formation inside hydrogenated amorphous carbon
DOI: https://doi.org/10.1016/j.jnucmat.2025.155886
[2025] First-principles structural analysis of polarity inversion boundaries in GaN
DOI: https://doi.org/10.35848/1347-4065/ae2173
[2025] Chemical vapor deposition of compound semiconductors: process simulation and experimental validation
DOI: https://doi.org/10.35848/1882-0786/ae2f19
[2025] Faceted-rough surface on a crystallite’s shape with nanometer-scale Kardar–Parisi–Zhang kinetic rough surfaces for interface-limited growth
DOI: https://doi.org/10.1016/j.apsusc.2025.163579
[2025] Influence of Intrinsic Point Defects Incorporated from Growth Surface on Atomic Interdiffusion and Unintentional Compositional Gradient in AlGaN/AlN Heterointerfaces
DOI: https://doi.org/10.1021/acs.cgd.4c01542

続きを表示（残り 23 件）

[2025] Exploration of Stable Atomic Configurations in Graphene-like BCN Systems by Density Functional Theory and Bayesian Optimization
[2024] Adiabatic Potential for Conformational Change of VGa–VN Complex Defects in GaN
DOI: https://doi.org/10.1002/pssb.202400026
[2024] Competition between Kardar–Parisi–Zhang and Berezinskii–Kosterlitz–Thouless kinetic roughening on (001) singular surface during steady crystal growth
DOI: https://doi.org/10.1038/s41598-024-79380-5
[2023] First-principles calculations of <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" altimg="si17.svg" display="inline" id="d1e393"><mml:mi>α</mml:mi></mml:math>-Ga2O3 /Al2O3 superlattice band structures
DOI: https://doi.org/10.1016/j.jcrysgro.2023.127477
[2023] Polarization Doping in a GaN-InN System—Ab Initio Simulation
DOI: https://doi.org/10.3390/ma16031227
[2023] Polar GaN Surfaces under Gallium Rich Conditions: Revised Thermodynamic Insights from Ab Initio Calculations
DOI: https://doi.org/10.3390/ma16175982
[2023] Progress in Surface Science in III-Nitride MOCVD
DOI: https://doi.org/10.1380/vss.66.227
[2023] Bandgap Change in Short‐Period InN/AlN Superlattices Induced by Lattice Strain
DOI: https://doi.org/10.1002/pssb.202200549
[2022] Polarization doping—Ab initio verification of the concept: Charge conservation and nonlocality
DOI: https://doi.org/10.1063/5.0098909
[2022] An atomistic insight into reactions and free-energy profiles of NH3 and Ga on GaN surfaces during the epitaxial growth
DOI: https://doi.org/10.1016/j.apsusc.2022.153935
[2022] DFT Modeling of Unintentional Oxygen Incorporation Enhanced by Magnesium in GaN(0001) and AlN(0001) Growth Surfaces during Metal‐Organic Vapor‐Phase Epitaxy
DOI: https://doi.org/10.1002/pssb.202100430
[2022] Beyond ab initio reaction simulator: An application to GaN metalorganic vapor phase epitaxy
DOI: https://doi.org/10.1063/5.0119783
[2022] Exploration of a large-scale reconstructed structure on GaN(0001) surface by Bayesian optimization
DOI: https://doi.org/10.1063/5.0078660
[2021] Adsorption of nitrogen at AlN(000-1) surface – Decisive role of structural and electronic factors
DOI: https://doi.org/10.1016/j.susc.2021.121891
[2021] Band gap tuning in InxGa1-xN/InyGa1-yN short period superlattices
DOI: https://doi.org/10.1016/j.spmi.2021.106907
[2021] Theoretical study on the effect of H 2 and NH 3 on trimethylgallium decomposition process in GaN MOVPE
DOI: https://doi.org/10.35848/1347-4065/abf089
[2021] Impurity incorporation mechanism in GaN MOVPE: ab initio-based approach
DOI: https://doi.org/10.1117/12.2577463
[2021] Facet stability of GaN during tri-halide vapor phase epitaxy: an ab initio -based approach
DOI: https://doi.org/10.1039/d0ce01683g
[2021] Progress in Modeling Compound Semiconductor Epitaxy: Unintentional Doping in GaN MOVPE
DOI: https://doi.org/10.1021/acs.cgd.0c01564
[2021] Polarization Doping - Ab Initio Verification of the Concept: Charge Conservation and Locality
DOI: https://doi.org/10.2139/ssrn.3920962
[2021] Al coverage of AlN(0001) surface and Al vapor pressure – Thermodynamic assessment based on ab initio calculations
DOI: https://doi.org/10.1016/j.commatsci.2021.111159
[2021] Effects of Mg dopant in Al-composition-graded Al x Ga1−x N (0.45 ≤ x) on vertical electrical conductivity of ultrawide bandgap AlGaN p–n junction
DOI: https://doi.org/10.35848/1882-0786/ac1d64
[2021] Influence of Lattice Distortion on the Effective Bandgaps of InN/AlN Superlattices

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AI 要約（直近 5 年の研究成果）

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研究成果（33 件）

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