Akira Kusaba 研究室

主宰者：Akira Kusaba

九州大学

AI 要約（直近 5 年の研究成果）

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※ AI（Claude）が、公開されている論文要旨から研究の問い・手法・主要な発見を事実情報として抽出・再構成して自動生成しています。誤りを含む可能性があるため、正確性は研究室公式情報でご確認ください。

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研究成果（20 件）

[2026] Limited diffusion of silicon in GaN: A DFT study supported by experimental evidence
DOI: https://doi.org/10.1063/5.0325381
[2026] First-principles calculations of effective mass of impurity-doped Ga2O3
DOI: https://doi.org/10.1016/j.jcrysgro.2026.128654
[2026] Material configurations informatics for semiconductor materials research
DOI: https://doi.org/10.1117/12.3082408
[2026] Modeling indium migration on vicinal GaN(0001): An Ab initio study
DOI: https://doi.org/10.1016/j.susc.2026.122930
[2025] Chemical vapor deposition of compound semiconductors: process simulation and experimental validation
DOI: https://doi.org/10.35848/1882-0786/ae2f19
[2025] Exploration of Stable Atomic Configurations in Graphene-like BCN Systems by Density Functional Theory and Bayesian Optimization
[2025] Faceted-rough surface on a crystallite’s shape with nanometer-scale Kardar–Parisi–Zhang kinetic rough surfaces for interface-limited growth
DOI: https://doi.org/10.1016/j.apsusc.2025.163579
[2025] First-principles molecular dynamics of H2 molecule formation inside hydrogenated amorphous carbon
DOI: https://doi.org/10.1016/j.jnucmat.2025.155886
[2025] Influence of Intrinsic Point Defects Incorporated from Growth Surface on Atomic Interdiffusion and Unintentional Compositional Gradient in AlGaN/AlN Heterointerfaces
DOI: https://doi.org/10.1021/acs.cgd.4c01542
[2024] SAT solver-driven approach for validating local electron counting rule
DOI: https://doi.org/10.1016/j.jcrysgro.2024.127927

続きを表示（残り 10 件）

[2023] Polar GaN Surfaces under Gallium Rich Conditions: Revised Thermodynamic Insights from Ab Initio Calculations
DOI: https://doi.org/10.3390/ma16175982
[2023] Progress in Surface Science in III-Nitride MOCVD
DOI: https://doi.org/10.1380/vss.66.227
[2023] Application of Information Science and Technology to GaN Crystal Growth
DOI: https://doi.org/10.7210/jrsj.41.680
[2022] Beyond <i>ab initio</i> reaction simulator: An application to GaN metalorganic vapor phase epitaxy
DOI: https://doi.org/10.1063/5.0119783
[2022] DFT Modeling of Unintentional Oxygen Incorporation Enhanced by Magnesium in GaN(0001) and AlN(0001) Growth Surfaces during Metal‐Organic Vapor‐Phase Epitaxy
DOI: https://doi.org/10.1002/pssb.202100430
[2022] Exploration of a large-scale reconstructed structure on GaN(0001) surface by Bayesian optimization
DOI: https://doi.org/10.1063/5.0078660
[2021] A new combination of Hankel and sparsity-promoting dynamic mode decompositions and its application to the prediction of plasma turbulence
DOI: https://doi.org/10.35848/1347-4065/ac1c3c
[2021] Theoretical study on the effect of H <sub>2</sub> and NH <sub>3</sub> on trimethylgallium decomposition process in GaN MOVPE
DOI: https://doi.org/10.35848/1347-4065/abf089
[2021] Progress in Modeling Compound Semiconductor Epitaxy: Unintentional Doping in GaN MOVPE
DOI: https://doi.org/10.1021/acs.cgd.0c01564
[2021] Facet stability of GaN during tri-halide vapor phase epitaxy: an <i>ab initio</i> -based approach
DOI: https://doi.org/10.1039/d0ce01683g

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