Shun-ichiro Ohmi 研究室

主宰者：Shun-ichiro Ohmi

東京工業大学

AI 要約（直近 5 年の研究成果）

要約はまだ生成されていません。

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研究成果（35 件）

[2025] Guest Editorial Special Section on the 2024 International Symposium on Semiconductor Manufacturing
DOI: https://doi.org/10.1109/tsm.2025.3588651
[2025] トモグラフィー発光分光法による減圧酸素ICPの空間分解計測
[2025] Ar/N₂ Gas Flow Rate Dependence on the Ferroelectric HfNₓ Thin Film Formation by ECR-Plasma Sputtering
DOI: https://doi.org/10.1109/tsm.2025.3575588
[2025] Dependence of ferroelectric characteristics on the crystallinity of HfN thin film formed on Si(100) by a two-step deposition method
DOI: https://doi.org/10.35848/1347-4065/ae064e
[2024] Influence of XeCl excimer laser annealing on the ferroelectric nondoped HfO2 formation deposited on a Si(100) substrate
DOI: https://doi.org/10.35848/1347-4065/ad63b1
[2024] Digital/Analog-Operation of Hf-Based FeNOS Nonvolatile Memory Utilizing Ferroelectric Nondoped HfO2 Blocking Layer
DOI: https://doi.org/10.1587/transele.2023fup0002
[2024] Kr-Plasma Process for Conductance Control of MFSFET With FeND-HfO₂ Gate Insulator
DOI: https://doi.org/10.1109/jeds.2024.3462930
[2024] Fabrication of monolayer h-BN/LaB6 heterostructure thin film with low work function and high chemical stability
DOI: https://doi.org/10.1016/j.apsusc.2024.160478
[2023] Low-voltage operation of floating-gate type nonvolatile memory utilizing N-doped LaB 6 metal and LaB xN y insulator stacked structure
DOI: https://doi.org/10.7567/ssdm.2023.m-7-05
[2023] Kr-Plasma Sputtering for Pt Gate Electrode Deposition on MFSFET with 5 nm-Thick Ferroelectric Nondoped HfO2 Gate Insulator for Analog Memory Application
DOI: https://doi.org/10.1587/transele.2022fup0003

続きを表示（残り 25 件）

[2023] Preface: Special issue on control of semiconductor interfaces (ISCSI-IX)
DOI: https://doi.org/10.1016/j.mssp.2023.107386
[2023] FOREWORD
DOI: https://doi.org/10.1587/transele.2022fuf0001
[2023] Effect of SiO2 Interfacial Layer Reduction on MFSFET With 5 nm-Thick Ferroelectric Nondoped HfO2 by Deposition Rate Control
DOI: https://doi.org/10.1109/tsm.2023.3284829
[2022] The Effect of Inter Layers on the Ferroelectric Undoped HfO2 Formation
DOI: https://doi.org/10.1587/transele.2021fup0004
[2022] MFSFET with 5nm Thick Ferroelectric Nondoped HfO2 Gate Insulator Utilizing Low Power Sputtering for Pt Gate Electrode Deposition
DOI: https://doi.org/10.1587/transele.2021fup0003
[2022] 3 V operation of pentacene-based floating-gate memory realized by the isolation process with Ar/N2-plasma nitridation for N-doped LaB6 metal and high-k LaB x Ny insulator stacked structure
DOI: https://doi.org/10.35848/1347-4065/acaed5
[2022] Deposition rate dependence of the 5 nm-thick ferroelectric nondoped HfO2 on MFSFET characteristics
DOI: https://doi.org/10.1109/issm55802.2022.10026898
[2022] Low-voltage operation of pentacene-based floating-gate memory utilizing N-doped LaB6 metal and high-k LaBxNy insulator stacked structure
DOI: https://doi.org/10.7567/ssdm.2022.d-6-07
[2022] Sputtering Gas Pressure Dependence on the LaBxNy Insulator Formation for Pentacene-Based Back-Gate Type Floating-Gate Memory with an Amorphous Rubrene Passivation Layer
DOI: https://doi.org/10.1587/transele.2021fup0005
[2022] Effects of sputtering power on the formation of 5 nm thick ferroelectric nondoped HfO 2 gate insulator for MFSFET application
DOI: https://doi.org/10.35848/1347-4065/ac6385
[2022] Investigation of random telegraph noise characteristics of Hf-based MONOS nonvolatile memory devices with HfO 2 and HfON tunneling layers
DOI: https://doi.org/10.35848/1347-4065/ac4893
[2021] Ferroelectric Hafnium Nitride Thin Films Directly Formed on Si(100) Substrate
DOI: https://doi.org/10.1109/jeds.2021.3123438
[2021] Multi-level 2-bit/cell operation utilizing Hf-based metal/oxide/nitride/oxide/silicon nonvolatile memory with HfO 2 and HfON tunneling layer
DOI: https://doi.org/10.35848/1347-4065/ac340c
[2021] A study on the effect of inter layers on ferroelectric nondoped HfO2 formation
[2021] Sputtering gas pressure dependence on the LaBxNy insulator formation
DOI: https://doi.org/10.7567/ssdm.2021.k-5-07
[2021] Investigation of Random Telegraph Noise Characteristics of Hf-based MONOS Nonvolatile Memory Devices with HfO2 and HfON Tunneling Layer
DOI: https://doi.org/10.7567/ssdm.2021.b-2-06
[2021] Random telegraph noise in Hf-based MONOS nonvolatile memory with HfO 2 and HfON tunneling layer
[2021] Investigation of suppression of SiO 2 interfacial layer formation during ferroelectric non-doped HfO 2 formation
[2021] Ferroelectric Nondoped HfO2 Blocking Layer Formation for Hf-based FeNOS Analog Memory Applications
DOI: https://doi.org/10.1109/drc52342.2021.9467182
[2021] Post metallization annealing effect utilizing Pt gate electrode for MFSFET with ferroelectric nondoped HfO2 formed by Ar/O2-plasma sputtering
DOI: https://doi.org/10.1557/s43580-021-00065-6
[2021] Investigation of the HfON Tunneling Layer of MONOS Device for Low-Voltage and High-Speed Operation Nonvolatile Memory Application
DOI: https://doi.org/10.1109/tsm.2021.3068458
[2021] The Effect of Si Surface Flattening Process on the MISFET With High-k HfNx Multilayer Gate Dielectrics
DOI: https://doi.org/10.1109/tsm.2021.3068475
[2021] Effect of Kr/O2-Plasma Reactive Sputtering on Ferroelectric Nondoped HfO₂ Formation for MFSFET With Pt Gate Electrode
DOI: https://doi.org/10.1109/ted.2021.3064907
[2021] N 2 gas flow rate dependence on the high- k LaB x N y thin film characteristics formed by RF sputtering for floating-gate memory applications
DOI: https://doi.org/10.35848/1347-4065/abe5c3
[2021] HfN multi charge trapping layers for Hf-based metal-oxide-nitride-oxide-Si nonvolatile memory
DOI: https://doi.org/10.35848/1347-4065/abe09f

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AI 要約（直近 5 年の研究成果）

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研究成果（35 件）

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