Iriya Muneta 研究室

主宰者：Iriya Muneta

東京工業大学

AI 要約（直近 5 年の研究成果）

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※ AI（Claude）が、公開されている論文要旨から研究の問い・手法・主要な発見を事実情報として抽出・再構成して自動生成しています。誤りを含む可能性があるため、正確性は研究室公式情報でご確認ください。

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研究成果（60 件）

[2026] High-Quality PVD-WS 2 Thin Films via H 2 S Annealing Enabling Suppression of S-S Bonds
DOI: https://doi.org/10.1109/edtm65772.2026.11497821
[2025] Fabrication of n-type and p-type WSe2 field-effect transistors and their low-voltage CMOS inverter operation
DOI: https://doi.org/10.35848/1347-4065/adb43a
[2024] Magnetism of Ultrathin Small-Grain MoS2 Film on Number of Layers for Low Power Two-Dimensional Spintronic Devices
DOI: https://doi.org/10.7567/ssdm.2024.ps-09-06
[2024] Reduction of contact resistance to PVD-MoS₂ film using aluminum–scandium alloy (AISc) edge contact
DOI: https://doi.org/10.1109/edtm58488.2024.10511604
[2024] Crystallinity improvement of physical-vapor-deposited WS2 films by controlling particle energy
DOI: https://doi.org/10.35848/1347-4065/ada2f5
[2024] Improvement of MoS2 Film Quality by Low Flux of Sputtered Particles Using a Molybdenum Grid
DOI: https://doi.org/10.1109/jeds.2024.3502922
[2023] MoS2極薄膜における磁化特性の層数依存性
[2023] Ni/Al2O3/スパッタWS2コンタクトの電流電圧特性
[2023] トップゲートに自己整合したWOx S/Dを用いた30-50 nm膜厚WSe2バックチャネルpFET
[2023] Self-Aligned WOx S/D Contacts to Gate Stacks with TiOx Nucleation Layer by Multiple-Deposition Method in WSe2 pFETs

続きを表示（残り 50 件）

[2023] スパッタ成膜MoS2の基板上での原子分解能電子顕微鏡観察
[2023] スパッタMoS2膜に対するエッジ金属コンタクトの電流電圧特性
[2023] Fabrication and Characterization of Self-Aligned WSe2 p-Type Field-Effect Transistor
DOI: https://doi.org/10.1149/ma2023-01291781mtgabs
[2023] Ferromagnetism modulation by ultralow current in a two-dimensional polycrystalline molybdenum disulfide atomic layered structure
[2023] Improvement of MoS2 Film Quality by Solid-Phase Crystallization from PVD Amorphous MoSx Film
DOI: https://doi.org/10.1109/edtm55494.2023.10103089
[2023] Grain-Size Enlargement of MoS2 Film by Low-Rate Sputtering with Molybdenum Grid
DOI: https://doi.org/10.1109/edtm55494.2023.10103043
[2023] Grain-Size Enlargement of MoS2 Film by Low-Rate Sputtering with Molybdenum Grid
[2023] Improvement of MoS2 Film Quality by Solid-Phase Crystallization from PVD Amorphous MoSx Film
[2023] Self-heating and Short-Channel Effect Immunity with Partial-Bottom-Dielectric-Isolation for Gate-All-Around Nano-Sheet FETs
[2023] Chemical states of PVD-ZrS2 film underneath scaled high-k film with self-oxidized ZrO2 film as interfacial layer
[2023] Self-Aligned WO x S/D Contacts to Gate Stacks with TiO x Nucleation Layer by Multiple-Deposition Method in WSe 2 pFETs
DOI: https://doi.org/10.7567/ssdm.2023.a-2-03
[2022] Ferromagnetism and current control of magnetoresistance in two-dimensional polycrystalline MoS2
[2022] Chemical states of PVD-ZrS2 film underneath scaled high-k film with self-oxidized ZrO2 film as interfacial layer
DOI: https://doi.org/10.35848/1347-4065/aca7cf
[2022] Doping-Free Complementary Metal-Oxide-Semiconductor Inverter Based on N-Type and P-Type Tungsten Diselenide Field-Effect Transistors With Aluminum-Scandium Alloy and Tungsten Oxide for Source/Drain Contact
DOI: https://doi.org/10.1109/jeds.2022.3224206
[2022] Doping-Free Complementary Metal-Oxide-Semiconductor Inverter Based on N-Type and P-Type Tungsten Diselenide Field-Effect Transistors With Aluminum-Scandium Alloy and Tungsten Oxide for Source/Drain Contact
[2022] Ferromagnetism modulation by ultralow current in a two-dimensional polycrystalline molybdenum disulphide atomic layered structure
DOI: https://doi.org/10.1038/s41598-022-22113-3
[2022] (Invited, Digital Presentation) Low Voltage Operation of CMOS Inverter Based on WSe2 n/p FETs
DOI: https://doi.org/10.1149/ma2022-0215825mtgabs
[2022] Ferromagnetism modulation by ultralow current in a two-dimensional polycrystalline molybdenum disulphide atomic layered structure
[2022] Chemical Properties of a PVD-ZrS2 Film Underneath Scaled-High-k/IL-ZrO2 Insulator Systems
DOI: https://doi.org/10.7567/ssdm.2022.h-6-04
[2022] 強磁性を示す二次元多結晶層状物質MoS2における非対称線形磁気抵抗
[2022] MoS2膜質のスパッタ成膜レート依存性調査
[2022] 希土類酸化物キャッピングによるY:HfO2キャパシタの信頼性改善
[2022] アルミニウムスカンジウム合金(AlSc)と酸化タングステン(WOx)をソース/ドレイン電極に用いたWSe2 n/p FETとCMOSインバータ応用
[2022] アニール処理によるWS2-Niエッジコンタクト特性の向上
[2022] 微結晶MoS2膜への硫黄雰囲気アニールによる結晶性向上
[2022] Positive Seebeck coefficient of niobium-doped MoS2 film deposited by sputtering and activated by sulfur vapor annealing
[2022] Positive Seebeck coefficient of niobium-doped MoS2 film deposited by sputtering and activated by sulfur vapor annealing
DOI: https://doi.org/10.35848/1347-4065/ac7621
[2022] 二次元多結晶二硫化モリブデン原子層状膜における超低電流強磁性変調
[2022] Experimental demonstration of high-gain CMOS Inverter operation at low Vdd down to 0.5 V consisting of WSe2 n/p FETs
[2022] Elucidation of PVD MoS2 Film Formation Process and its Structure Focusing on Sub-Monolayer Region
[2022] High Seebeck Coefficient in PVD-WS2 Film with Grain-Size Enlargement
[2021] Self-Aligned-TiSi2 Bottom Contact with APM Cleaning and Post-annealing for Sputtered-MoS2 Film
[2021] ZrS2 Symmetrical-Ambipolar FETs with Near-Midgap TiN Film for Both Top-Gate electrode and Schottky-Barrier Contact
[2021] Interdiffusion of Titanium and Sulfur at Interface of Ti-WS 2 Edge Contact
[2021] Accurate TCAD simulation of trench-gate IGBTs and its application to prediction of carrier lifetime requirements for future scaled devices
DOI: https://doi.org/10.1109/edtm50988.2021.9420922
[2021] WS2pMISFETs by Sputtering and Sulfur-Vapor Annealing with TiN/HfO2-Top-Gate-Stack, TiN Contact and Ultra-Thin Body and Box
DOI: https://doi.org/10.1109/edtm50988.2021.9420925
[2021] Elucidation of PVD MoS2 film formation process and its structure focusing on sub-monolayer region
DOI: https://doi.org/10.35848/1347-4065/ac3fc9
[2021] High Seebeck coefficient in PVD-WS2 film with grain size enlargement
DOI: https://doi.org/10.35848/1347-4065/ac3a93
[2021] Accurate TCAD simulation of trench-gate IGBTs and its application to prediction of carrier lifetime requirements for future scaled devices
[2021] Importance of Crystallinity Improvement in MoS2 film just after MoS2-Compound Sputtering even followed by Post Sulfurization for Chip-Size Fabrication
[2021] Importance of crystallinity improvement in MoS2 film by compound sputtering even followed by post sulfurization
DOI: https://doi.org/10.35848/1347-4065/abdcae
[2021] Experimental demonstration of high-gain CMOS inverter operation at low V dd down to 0.5 V consisting of WSe2 n/p FETs
DOI: https://doi.org/10.35848/1347-4065/ac3a8e
[2021] Experimental Demonstration of High-Gain CMOS Inverter at Low Vdd Down to 0.5 V Consisting of WSe2 n/p FETs
DOI: https://doi.org/10.7567/ssdm.2021.h-6-05
[2021] Growth Mechanism of PVD MoS2 Film from Sub-Monolayer Region
DOI: https://doi.org/10.7567/ssdm.2021.h-2-05
[2021] Experimental Demonstration of High-Gain CMOS Inverter at Low Vdd Down to 0.5 V Consisting of WSe2 n/p FETs
[2021] Grain Size Enlargement in 2D WS2 Film with Low-Power RF-Magnetron Sputtering
[2021] WS2 Film by Sputtering and Sulfur-Vapor Annealing, and its pMISFET With TiN/HfO2 Top-Gate Stack, TiN Bottom Contact, and Ultra-Thin Body and Box
DOI: https://doi.org/10.1109/jeds.2021.3108882
[2021] Growth Mechanism of PVD MoS2 Film from Sub-Monolayer Region
[2021] WS2 Film by Sputtering and Sulfur-Vapor Annealing, and its pMISFET with TiN/HfO2 Top-Gate Stack, TiN Bottom Contact, and Ultra-Thin Body and Box
[2021] Chemical composition change at ALD-HfO 2 /PVD-WS 2 interface

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AI 要約（直近 5 年の研究成果）

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関連研究室(8 件)

研究成果（60 件）

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