Hiroki Sugiyama 研究室

主宰者：Hiroki Sugiyama

金沢大学

AI 要約（直近 5 年の研究成果）

杉山寛紀研究室は、次世代の高速通信システムに向けた化合物半導体デバイスの開発を中心に研究を進めています。特にインジウムリン（InP）やガリウムナイトライド（GaN）などの化合物半導体を用いた高電子移動度トランジスタ（HEMT）の結晶成長・設計・特性評価に取り組んでいます。これらのトランジスタは、テラヘルツ帯や超高周波帯での動作が可能であり、5G・6G等の次世代通信インフラの実現に不可欠な素子です。また、これらのトランジスタをレーザーやマイクロ波回路として集積化する技術の開発も推進しています。特に、直接変調が可能な薄膜レーザーをシリコンやシリコンカーバイド基板上に転写・集積する手法を確立し、100ギガビット毎秒以上の高速光通信の実現を実証しています。同時に、デバイスの信頼性評価や界面特性の改善に関する研究も行っており、実用的で安定した高周波デバイスの実現を目指しています。

※ AI（Claude）が、公開されている論文要旨から研究の問い・手法・主要な発見を事実情報として抽出・再構成して自動生成しています。誤りを含む可能性があるため、正確性は研究室公式情報でご確認ください。

外部リンク

研究成果（54 件）

[2026] Trace-Level Detection of a Niacin Metabolite in Human Blood under Phosphonate Pillar[6]arene-Induced Columnar-Like Aggregation Conditions
DOI: https://doi.org/10.1021/acs.analchem.6c00309
[2026] Control of Strained‐InGaAs Channel Composition of InP‐Based HEMTs in Low‐Temperature Metal‐Organic Vapor‐Phase Epitaxy Growth
DOI: https://doi.org/10.1002/pssa.202500963
[2025] Seismic performance of bridge pier integrated by multiple steel pipes with directly-connected piles using soil-water coupled three-dimensional elasto-plastic finite element analysis
DOI: https://doi.org/10.1016/j.sandf.2025.101571
[2025] Structural Plan and Design of Multi-Span Composite Rigid Bridge for the Unforeseen Risk on Soft Ground
DOI: https://doi.org/10.2749/tokyo.2025.3010
[2025] Back-barrier design of N-polar GaN-channel HEMTs with high-resistivity AlGaN buffer on C-face SiC substrate
DOI: https://doi.org/10.35848/1347-4065/ae28a8
[2024] A Supramolecular Biosensor for Rapid and High-Throughput Quantification of a Disease-Associated Niacin Metabolite
DOI: https://doi.org/10.1021/acs.analchem.4c02653
[2024] Directly Modulated Membrane Lasers on SiC Integrated With Spot-size Converters
DOI: https://doi.org/10.1109/jlt.2024.3437754
[2024] PROPOSAL AND EFFECTIVENESS OF TOWER SUPPORT CABLES FOR REDUCING DEFFLECTION OF MULTI-SPAN CABLE-STAYED BRIDGE
DOI: https://doi.org/10.2208/jscejj.23-00192
[2024] A Study on Soil-Structure Interaction in Smart Bridge Pier Structure Under Dynamic Excitations
DOI: https://doi.org/10.3208/jgssp.v10.os-25-06
[2024] Ride comfort and impact factor of a seven-span continuous cable-stayed bridge
DOI: https://doi.org/10.1177/13694332241269259

続きを表示（残り 44 件）

[2024] Prototype Design of Real-Time OFDM Transceiver in 300-GHz Band for Backhaul Networks
DOI: https://doi.org/10.1109/icce62051.2024.10634659
[2024] 16 × 112 Gbps directly modulated membrane laser array for co-packaged interconnects
DOI: https://doi.org/10.1364/oe.529049
[2024] Demonstration of GaN-channel high electron mobility transistors with regrown InAs/GaAs source and drain
DOI: https://doi.org/10.1063/5.0194197
[2024] Second-Harmonic-Wave Assisted Octave-Spanning Supercontinuum Generation in an AlGaAs-on-Insulator Waveguide
DOI: https://doi.org/10.1109/siphotonics60897.2024.10543509
[2024] Micro-transfer-printed membrane lasers on Si platform
DOI: https://doi.org/10.1117/12.2691319
[2024] SEISMIC STRUCTURE PLAN BASED ON STRUCTUAL CHARACTERISTICS OF 4-PYLON MULTI-SPAN CABLE-STAYED BRIDGE
DOI: https://doi.org/10.2208/jscejj.23-13157
[2024] Membrane Directly Modulated Lasers on Si Using Micro-Transfer Printing Integrated with Post-Processed Polymer Waveguide
DOI: https://doi.org/10.1109/islc57752.2024.10717403
[2024] Microstructural Characterization of InP Films on SOI (001) Substrates Grown by Selective Lateral Metal-Organic Vapor-Phase Epitaxy
DOI: https://doi.org/10.1016/j.jcrysgro.2024.127903
[2023] Feasibility Study of InP-based Tera-Hertz-ICs Fabrication Process for Beyond 5G / 6G Wireless Network Systems
DOI: https://doi.org/10.7567/ssdm.2023.n-3-01
[2023] Precise channel temperature prediction in AlGaN/GaN HEMTs via closed-form empirical expression
DOI: https://doi.org/10.1016/j.sse.2023.108788
[2023] Crystal structure determination of molecular tweezers without recrystallization
DOI: https://doi.org/10.1107/s2053273323088770
[2023] Reliability Instability Assessment with Interfacial Trapping Analysis for the Optimization of Al Composition in AlxGa1−xN/GaN High Electron Mobility Transistors
DOI: https://doi.org/10.1002/pssa.202300597
[2023] Effect of Stress Voltage and Temperature on the Reliability of AlGaN/GaN HEMTs for RF and Microwave Application
DOI: https://doi.org/10.1002/pssa.202300583
[2023] 16-channel membrane directly modulated laser array on Si for 2-km transmission of 112-Gbps PAM-4
DOI: https://doi.org/10.1049/icp.2023.1868
[2023] Spot-size-converter-integrated directly modulated membrane lasers on SiC for 100-GBaud PAM-4 transmission over 2 km
DOI: https://doi.org/10.1049/icp.2023.2061
[2023] Systematic Study and Review of InP‐based Tera‐Hertz‐ICs Fabrication Process Technology for Beyond 5G/6G Wireless Communication Networks
DOI: https://doi.org/10.1002/pssa.202300561
[2023] Performance Enhancement of AlGaN/GaN HEMT via Trap-State Improvement Using O2 Plasma Treatment
DOI: https://doi.org/10.1109/ted.2023.3268626
[2023] Micro-Transfer-Printed Membrane Distributed Reflector Lasers on Si Waveguide Modulated With 50-Gbit/s NRZ Signal
DOI: https://doi.org/10.1109/jlt.2023.3265973
[2023] Analytical and Physical Investigation on Source Resistance in InxGa1−xAs Quantum-Well High-Electron-Mobility Transistors
DOI: https://doi.org/10.3390/mi14020439
[2023] Sub-50 nm Terahertz In0.8Ga0.2As Quantum-Well High-Electron-Mobility Transistors for 6G Applications
DOI: https://doi.org/10.1109/ted.2022.3231576
[2023] Impact of Output Conductance on Current-Gain Cut-Off Frequency in InxGa1-xAs/In0.52Al0.48As Quantum-Well High-Electron-Mobility Transistors on InP Substrate
DOI: https://doi.org/10.3390/electronics12020259
[2023] STRUCTURAL PROPOSAL AND CHARACTERISTICS OF LIGHTWEIGHT COMPOSITE EDGE GIRDERS FOR MULTI-SPAN CABLE STAYED BRIDGES
DOI: https://doi.org/10.2208/jscejj.a1-0719
[2022] EVALUATION OF LOAD SHARING RATE FOR DECKS AND MAIN GIRDERS OF COMPOSITE TWO BOX GIRDERS THAT RECEIVE LATERAL LOAD
DOI: https://doi.org/10.2208/jscejseee.78.4_i_321
[2022] A PROPOSAL FOR A PERFORMANCE CHECKING METHOD FOR THE EFFECTS OF EARTHQUAKES ON BRIDGES LOCATED NEAR THE REVETMENT
DOI: https://doi.org/10.2208/jscejseee.78.4_i_431
[2022] Extraction of effective mobility of In Ga As/In Al As quantum well high-electron-mobility transistors on InP substrate
DOI: https://doi.org/10.1016/j.sse.2022.108446
[2022] High-temperature Operation of Membrane DR Lasers Integrated with Si Waveguide by Micro-transfer Printing Method
DOI: https://doi.org/10.23919/islc52947.2022.9943299
[2022] A New Methodology to Analyze Carrier Transport Properties for In x Ga1−x As Quantum-Well High-Electron Mobility Transistors From Transconductance in Saturation
DOI: https://doi.org/10.1109/led.2022.3230966
[2022] Terahertz In0.8 Ga0.2 As quantum-well HEMTs toward 6G applications
DOI: https://doi.org/10.1109/iedm45625.2022.10019567
[2022] On the universality of drain-induced-barrier-lowering in field-effect transistors
DOI: https://doi.org/10.1109/iedm45625.2022.10019358
[2022] Instability Assessment of AlGaN/GaN High Electron Mobility Transistors Under High Drain Current Condition
DOI: https://doi.org/10.23919/apmc55665.2022.10000060
[2022] Comprehensive modeling of the extrinsic transconductance for In Ga As/In Al As quantum-well high-electron-mobility transistors
DOI: https://doi.org/10.1016/j.sse.2022.108484
[2022] STUDY ON STRUCTURAL CHARACTERISTICS AND FEASIBILITY OF MULTI-SPAN LONG BRIDGES
DOI: https://doi.org/10.2208/jscejseee.78.3_331
[2022] Physics-Based Analytical Channel Charge Model of In x Ga1-x As/In0.52Al0.48As Quantum-Well Field-Effect Transistors From Subthreshold to Strong Inversion Regimes
DOI: https://doi.org/10.1109/jeds.2022.3171437
[2022] InP-HEMT-based Tera-Hertz-band IC Fabrication Technology For Beyond 5G/6G Application
DOI: https://doi.org/10.1380/vss.65.258
[2022] A Study of Antimony Diffusion of DHBTs with Compositionally Graded InGaAsSb Base
DOI: https://doi.org/10.1541/ieejeiss.142.342
[2021] Fabrication of N-polar GaN/AlGaN heterostructure on a 6 inch Si (100) substrate by epitaxial-layer transfer technique
[2021] Sub-30-nm In0.8Ga0.2As Composite-Channel High-Electron-Mobility Transistors With Record High-Frequency Characteristics
DOI: https://doi.org/10.1109/ted.2020.3045958
[2021] $\text{In}_{x}\text{Ga}_{1-x}\text{As}$ quantum-well high-electron-mobility transistors with a record combination of $\mathrm{f}_{\mathrm{T}}$ and $\mathrm{f}_{\max}$: From the mobility relevant to ballistic transport regimes
DOI: https://doi.org/10.1109/iedm19574.2021.9720667
[2021] A quantitative approach for trap analysis between Al0.25Ga0.75N and GaN in high electron mobility transistors
DOI: https://doi.org/10.1038/s41598-021-01768-4
[2021] A Comprehensive Benchmarking Method for the Net Combination of Mobility Enhancement and Density-of-States Bottleneck
DOI: https://doi.org/10.1109/led.2021.3072942
[2021] Theoretical and experimental analysis of the source resistance components in In0.7Ga0.3As quantum-well high-electron-mobility transistors
DOI: https://doi.org/10.1007/s40042-021-00096-0
[2021] 220–325-GHz 25-dB-Gain Differential Amplifier With High Common-Mode-Rejection Circuit in 60-nm InP-HEMT Technology
DOI: https://doi.org/10.1109/lmwc.2021.3061662
[2021] Electric Properties of GaN channel HEMTs on High Resistivity GaN Substrates
[2021] Impact of selective thermal etching in mixed H 2 /NH 3 atmosphere on crystal quality of AlGaN/GaN heterostructures
DOI: https://doi.org/10.35848/1347-4065/abdf72

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AI 要約（直近 5 年の研究成果）

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関連研究室(8 件)

研究成果（54 件）

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