Tetsuya Tohei 研究室

主宰者：Tetsuya Tohei

大阪大学

AI 要約（直近 5 年の研究成果）

当研究室は、物質の微細な構造と電子的性質を明らかにし、次世代の情報処理デバイスへの応用を目指しています。特に、窒化ガリウムなどの半導体材料における結晶欠陥の形成メカニズム、ならびに人工シナプスとして機能する抵抗変化型デバイスの開発に力を注いでいます。研究の手法として、放射光を用いたナノビーム X線回折測定により、ナノメートルスケールで結晶の歪みや欠陥を非破壊的に可視化する技術を開発しています。さらに、膨大な測定データを効率的に解析するため、機械学習アルゴリズムを組み合わせた分析方法を構築しています。また、薄膜試料の精密な成長制御や、電子顕微鏡観察などの微視的な分析手法も駆使しています。主な成果として、結晶成長中の構造変化を定量的に追跡する手法の確立、デバイス動作中のリアルタイムでの歪みの測定、および多端子メモリスタの設計による脳型計算機能の実装などが挙げられます。これらの研究を通じて、材料の微細構造制御がデバイス性能向上へつながることを実証し、エレクトロニクス産業への貢献を目指しています。

※ AI（Claude）が、公開されている論文要旨から研究の問い・手法・主要な発見を事実情報として抽出・再構成して自動生成しています。誤りを含む可能性があるため、正確性は研究室公式情報でご確認ください。

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研究成果（44 件）

[2026] Uncovering crystal structure evolution via nanobeam X-ray diffraction with a continuity-driven machine learning approach
DOI: https://doi.org/10.1016/j.matdes.2026.115669
[2026] Embedding Operant Conditioning Functions in a Four-Terminal Memristor
DOI: https://doi.org/10.1021/acsaelm.6c00586
[2026] Co-design of mixed-precision digital/analog memristor architecture for effective neural network computation
DOI: https://doi.org/10.1109/edtm65772.2026.11496861
[2026] Characterization of small-size oxygen precipitates in CZ-silicon by synchrotron Bragg tail analysis
DOI: https://doi.org/10.1016/j.mssp.2026.110966
[2025] Machine learning assisted nanobeam X-ray diffraction based analysis on hydride vapor-phase epitaxy GaN
DOI: https://doi.org/10.1107/s1600576725004169
[2025] Enhancing memristor multilevel resistance state with linearity potentiation via the feedforward pulse scheme
DOI: https://doi.org/10.1039/d4nh00623b
[2025] Sc-Doped Amorphous GaOx Memristors for High Temperature Neuromorphic Application
DOI: https://doi.org/10.7567/ssdm.2025.j-6-06
[2025] Revealing crystallographically distinct growth sectors in Na-flux GaN via machine learning-assisted nanobeam x-ray diffraction analysis
DOI: https://doi.org/10.1063/5.0284122
[2025] Analyses of oxygen precipitates in CZ-Si by X-ray diffuse scattering using parallel X-ray beam
DOI: https://doi.org/10.35848/1347-4065/adc0d3
[2025] In situ nanobeam x-ray diffraction of local strain in AlGaN/GaN high-electron-mobility transistors under operating condition
DOI: https://doi.org/10.1063/5.0275921

続きを表示（残り 34 件）

[2025] Anchor point based image registration for absolute scale topographic structure detection in microscopy
DOI: https://doi.org/10.1038/s41598-025-98390-5
[2024] Analysis of local strain fields around individual threading dislocations in GaN substrates by nanobeam x-ray diffraction
DOI: https://doi.org/10.1063/5.0199961
[2023] Micro- and Nanostructure Analysis of Vapor-Phase-Grown AlN on Face-to-Face Annealed Sputtered AlN/Nanopatterned Sapphire Substrate Templates
DOI: https://doi.org/10.1007/s11664-023-10348-3
[2023] Local strain distribution analysis in strained SiGe spintronics devices
DOI: https://doi.org/10.35848/1347-4065/ad18ce
[2023] Finite element analysis of oxygen vacancy behavior in four-terminal TiO2-x memristive devices
DOI: https://doi.org/10.7567/ssdm.2023.ps-2-13
[2023] Local strain distribution analysis in strained SiGe spintronics devices
DOI: https://doi.org/10.7567/ssdm.2023.ps-11-13
[2023] Conduction mechanism of Schottky contacts fabricated on etch pits originating from single threading dislocation in a highly Si-doped HVPE GaN substrate
DOI: https://doi.org/10.1016/j.mssp.2023.107778
[2023] Comprehensive analysis of current leakage at individual screw and mixed threading dislocations in freestanding GaN substrates
DOI: https://doi.org/10.1038/s41598-023-29458-3
[2023] High-temperature operation of gallium oxide memristors up to 600 K
DOI: https://doi.org/10.1038/s41598-023-28075-4
[2023] Interface engineering of amorphous gallium oxide crossbar array memristors for neuromorphic computing
DOI: https://doi.org/10.35848/1347-4065/acb060
[2023] Gate-tunable plasticity in artificial synaptic devices based on four-terminal amorphous gallium oxide memristors
DOI: https://doi.org/10.35848/1882-0786/acb0ae
[2022] Molecular beam homoepitaxy of N-polar AlN: Enabling role of aluminum-assisted surface cleaning
DOI: https://doi.org/10.1126/sciadv.abo6408
[2022] Versatile Functionality of Four-Terminal TiO₂₋ₓ Memristive Devices as Artificial Synapses for Neuromorphic Computing
[2022] Versatile Functionality of Four-Terminal TiO2–x Memristive Devices as Artificial Synapses for Neuromorphic Computing
DOI: https://doi.org/10.1021/acsaelm.2c00161
[2022] Amorphous GaOx Crossbar Array Memristors for Artificial Synaptic Devices
DOI: https://doi.org/10.7567/ssdm.2022.h-2-03
[2021] Development and resistive switching properties of four-terminal planer amorphous GaO x memristive devices
[2021] Gate-controlled modulation of synaptic properties in 4-terminal planar TiO 2-x memristive devices
[2021] Breaking of Thermopower–Conductivity Trade‐Off in LaTiO3 Film around Mott Insulator to Metal Transition
DOI: https://doi.org/10.1002/advs.202102097
[2021] High-Resolution Tomographic Analysis on AlN films Grown on NPSSs Using Nanobeam X-Ray Diffraction
DOI: https://doi.org/10.7567/ssdm.2021.j-5-03
[2021] Thermal strain analysis considering in-plane anisotropy for sputtered AlN on c- and a-plane sapphire under high-temperature annealing
DOI: https://doi.org/10.1063/5.0059723
[2021] Analysis of inverse-piezoelectric-effect-induced lattice deformation in AlGaN/GaN high-electron-mobility transistors by time-resolved synchrotron radiation nanobeam X-ray diffraction
DOI: https://doi.org/10.35848/1882-0786/ac1ee4
[2021] Propagation of threading dislocations and effects of Burgers vectors in HVPE-grown GaN bulk crystals on Na-flux-grown GaN substrates
DOI: https://doi.org/10.1063/5.0053766
[2021] Heterosynaptic Property Demonstrated with Planer Four-Terminal Amorphous GaO x Memristive Devices
DOI: https://doi.org/10.7567/ssdm.2021.i-2-03
[2021] First principles calculations of oxygen vacancy in rutile TiO2 under electric fields
[2021] Crack Formation Criteria for High-Temperature-Annealed Sputtered AlN
[2021] Microstructure analysis for thick AlN films grown on AlN templates with cone-type nano patterned sapphire substrates
[2021] One-to-one evaluation of electrical properties of Schottky contact and micro structure for individual threading dislocations in a free-standing HVPE-GaN substrate
[2021] Analysis of Stress and Impurity Evolution Related to Growth Sector in Na-flux GaN by Nanobeam X-ray Diffraction
[2021] Analysis of local strain fields around individual threading dislocations in HVPE-GaN bulk crystals by using nanobeam X-Ray diffraction
[2021] Crystalline microstructure and electric property of four-terminals oxide memristors
[2021] Structure analysis of OVPE-grown GaN crystals by using nanobeam X-ray diffraction
[2021] Analysis of Crystal Structure Associated with Dislocation Gathering in Na-flux GaN by Nanobeam X-ray Diffraction
[2021] Depth-resolved tomographic analysis on thick AlN films grown on NPSS using nanobeam X-ray diffraction
[2021] Operand analysis of local piezoelectric lattice deformation in AlGaN/GaN HEMT devices by synchrotron radiation nanobeam X-ray diffraction

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AI 要約（直近 5 年の研究成果）

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関連研究室(8 件)

研究成果（44 件）

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