Tetsu Kachi 研究室

主宰者：Tetsu Kachi

名古屋大学

AI 要約（直近 5 年の研究成果）

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研究成果（82 件）

[2026] Electrical activity of Mg clustering at nanoscale defects induced by N ion implantation in GaN
DOI: https://doi.org/10.1063/5.0335166
[2026] Electrical activity of Mg clustering at nanoscale defects induced by N ion implantation in GaN
DOI: https://doi.org/10.48505/nims.6368
[2026] Hole trapping and emission behavior near the valence band edge at an AlSiO/ p -type GaN interface revealed by repeated temperature-dependent C – V measurements
DOI: https://doi.org/10.1063/5.0325306
[2026] GaN-on-Si HEMTs for Low-Voltage FR2 Applications Enabled by Reactive-Sputtered n ++ -GaN Ohmic Contacts
DOI: https://doi.org/10.1109/led.2026.3678989
[2026] Behavior of excess donor-like defects induced by implantation of various ion species and subsequent annealing in n-type GaN layers
DOI: https://doi.org/10.35848/1347-4065/ae396a
[2026] Development of GaN trench MOSFET process technologies
DOI: https://doi.org/10.35848/1882-0786/ae393a
[2025] Impact of Implanted Ion Species on Excess Donors Introduced in n-type GaN Epitaxial Layers
DOI: https://doi.org/10.7567/ssdm.2025.m-4-01
[2025] Ultra-high-pressure annealing with a carbon capping layer as an activation method for Mg-ion-implanted GaN
DOI: https://doi.org/10.35848/1882-0786/ae0866
[2025] Detection of charge transition level of near-surface hydrogen interstitials introduced into Mg-ion-implanted GaN by annealing
DOI: https://doi.org/10.35848/1347-4065/ae0630
[2025] Structure of the very first atomic layer of Ga oxide on GaN at GaN oxidation front
DOI: https://doi.org/10.1063/5.0274521

続きを表示（残り 72 件）

[2025] Estimation of net acceptor activation ratio of channeled-implanted Mg from breakdown voltage analysis of vertical GaN p–n junction diodes with junction termination extension
DOI: https://doi.org/10.35848/1347-4065/ade753
[2025] Characterization of MOS Channels Having AlSiO/AlN/GaN Gate Structures on m-plane and c-plane: Mobility, Threshold Voltage, and its Stability
DOI: https://doi.org/10.1109/drc66027.2025.11105751
[2025] Vertical GaN Junction Barrier Schottky Diodes Fabricated by Using Channeled Implantation of Mg Ions and Ultrahigh-Pressure Annealing
DOI: https://doi.org/10.1109/ted.2025.3579442
[2025] Impacts of ultra-high-pressure annealing on undoped and ion-implanted GaN studied by photoluminescence measurements
DOI: https://doi.org/10.1063/5.0266700
[2025] High Mg activation with suppressed Mg diffusion during ultra-high-pressure annealing via sequential nitrogen-ion implantation in Mg-ion-implanted GaN
DOI: https://doi.org/10.35848/1882-0786/ade3ac
[2025] Analysis of Acceptor Activation and Lateral Diffusion of Channeled-Implanted Mg Atoms in Vertical GaN Junction Barrier Schottky Diodes
DOI: https://doi.org/10.23919/ispsd62843.2025.11117439
[2025] Depth Analyses of Acceptor and Compensating Donor Concentrations in Mg‐Ion‐Implanted GaN with Ultra‐High‐Pressure Annealing
DOI: https://doi.org/10.1002/pssb.202400613
[2025] Depth‐Resolved Photoluminescence for Channeling Implantation of Mg or Mg/N Ions into GaN after Ultra‐High‐Pressure Annealing
DOI: https://doi.org/10.1002/pssb.202500029
[2025] Comparison of switching characteristics of 650 V power devices using a double pulse circuit
DOI: https://doi.org/10.1587/elex.22.20240759
[2024] High Channel Mobility and Stable E-Mode Operation in AlSiO/AlN/m-Plane P-Type GaN MOSFETs with Little Temperature Dependence of the Threshold Voltage
DOI: https://doi.org/10.1109/iedm50854.2024.10873525
[2024] Rapid Mg substitution to Ga-sites and slow defect recovery revealed by depth-resolved photoluminescence in Mg/N-ion-implanted GaN
DOI: https://doi.org/10.1063/5.0232083
[2024] A distinctive bound exciton line induced by electron-beam irradiation and subsequent annealing of an unintentionally doped GaN layer
DOI: https://doi.org/10.35848/1347-4065/ad918a
[2024] Engineered interface charges and traps in GaN MOSFETs providing high channel mobility and E-mode operation
DOI: https://doi.org/10.35848/1347-4065/ad8c4f
[2024] Engineering of Channel Mobility and Threshold Voltage in AlSiO/AlN/p-type GaN Metal–Oxide–Semiconductor Field-Effect Transistors
DOI: https://doi.org/10.7567/ssdm.2024.d-7-01
[2024] Improvement of Uniformity by Face-to-Face Ultra-High-Pressure Annealing Observed by Scanning Internal Photoemission Microscopy Using Au/Ni/n-GaN Schottky Contacts
DOI: https://doi.org/10.7567/ssdm.2024.ps-03-02
[2024] Comparison of body diode switching characteristics of 650V power devices
DOI: https://doi.org/10.1587/elex.21.20240462
[2024] Study on the Impact of Mg-Channeled Implantation on Junction Termination Extension for GaN Vertical Power Devices Using TCAD Simulation
DOI: https://doi.org/10.1109/ted.2024.3427103
[2024] Reduction in Gap State Density near Valence Band Edge at Al2O3/p‐type GaN Interface by Photoelectrochemical Etching and Subsequent SiO2 Cap Annealing
DOI: https://doi.org/10.1002/pssb.202400025
[2024] Impacts of vacancy complexes on the room-temperature photoluminescence lifetimes of state-of-the-art GaN substrates, epitaxial layers, and Mg-implanted layers
DOI: https://doi.org/10.1063/5.0201931
[2024] Impact of Sequential N Ion Implantation on Extended Defects and Mg Distribution in Mg Ion‐Implanted GaN
DOI: https://doi.org/10.1002/pssr.202400074
[2024] A High Channel Mobility and a Normally‐off Operation of a Vertical GaN Metal‐Oxide‐Semiconductor Field‐Effect Transistors using an AlSiO/AlN Gate Stack Structure on m‐plane Trench Sidewall
DOI: https://doi.org/10.1002/pssr.202400010
[2024] Realization of low specific-contact-resistance on N-polar GaN surfaces using heavily-Ge-doped n-type GaN films deposited by low-temperature reactive sputtering technique
DOI: https://doi.org/10.35848/1882-0786/ad2783
[2024] Depth Analyses of Mg‐Acceptor and Si‐Donor Concentrations in GaN by Combining Stepwise Etching and Photoluminescence
DOI: https://doi.org/10.1002/pssb.202300528
[2023] Improvement of AlSiO/GaN interface by a novel post deposition annealing using ultra high pressure
DOI: https://doi.org/10.35848/1882-0786/ad0ba5
[2023] Design and fabrication of vertical GaN junction barrier Schottky rectifiers using Mg ion implantation
DOI: https://doi.org/10.35848/1347-4065/acec69
[2023] Investigation of gap states near conduction band edge in vicinity of interface between Mg-ion-implanted GaN and Al2O3 deposited after ultra-high-pressure annealing
DOI: https://doi.org/10.35848/1347-4065/ace3d1
[2023] Investigation of gap states near conduction band edge in vicinity of interface between Mg-ion-implanted GaN and Al2O3 deposited after ultra-high-pressure annealing
[2023] Mapping of ultra-high-pressure annealed n-GaN Schottky contacts using scanning internal photoemission microscopy
DOI: https://doi.org/10.1016/j.mssp.2023.107536
[2023] Annealing properties of vacancy-type defects in ion implanted GaN during ultra-high-pressure annealing studied by using a monoenergetic positron beam
DOI: https://doi.org/10.1117/12.2646233
[2023] Pressure Effect on Diffusion of Native Defects and Mg Impurity in Mg‐Ion‐Implanted GaN during Ultrahigh‐Pressure Annealing
DOI: https://doi.org/10.1002/pssr.202300035
[2022] Detection of defect levels in vicinity of Al2O3/p-type GaN interface using sub-bandgap-light-assisted capacitance–voltage method
DOI: https://doi.org/10.1063/5.0109117
[2022] Mg-implanted vertical GaN junction barrier Schottky rectifiers with low on resistance, low turn-on voltage, and nearly ideal nondestructive breakdown voltage
DOI: https://doi.org/10.1063/5.0106321
[2022] Comparison of switching performance of high-speed GaN vertical MOSFETs with various gate structures based on TCAD simulation
DOI: https://doi.org/10.35848/1347-4065/aca266
[2022] Process engineering of GaN power devices via selective-area p-type doping with ion implantation and ultra-high-pressure annealing
DOI: https://doi.org/10.1063/5.0107921
[2022] Effect of Ultra‐High‐Pressure Annealing on Defect Reactions in Ion‐Implanted GaN Studied by Positron Annihilation
DOI: https://doi.org/10.1002/pssb.202270028
[2022] Evidence of reduced interface states in Al2O3/AlGaN MIS structures via insertion of ex situ regrown AlGaN layer
DOI: https://doi.org/10.35848/1882-0786/ac8f13
[2022] Atomic resolution analysis of extended defects and Mg agglomeration in Mg-ion-implanted GaN and their impacts on acceptor formation
DOI: https://doi.org/10.1063/5.0097866
[2022] Effects of Hydrogen Incorporation on Mg Diffusion in GaN‐Doped with Mg Ions via Ultra‐High‐Pressure Annealing
DOI: https://doi.org/10.1002/pssb.202200235
[2022] Relationship of carbon concentration and slow decays of photoluminescence in homoepitaxial n-type GaN layers
DOI: https://doi.org/10.35848/1347-4065/ac79ec
[2022] Effect of Ultra‐High‐Pressure Annealing on Defect Reactions in Ion‐Implanted GaN Studied by Positron Annihilation
DOI: https://doi.org/10.1002/pssb.202200183
[2022] Atomic-scale investigation of implanted Mg in GaN through ultra-high-pressure annealing
DOI: https://doi.org/10.1063/5.0087248
[2022] Insight into interface electrical properties of metal–oxide–semiconductor structures fabricated on Mg-implanted GaN activated by ultra-high-pressure annealing
DOI: https://doi.org/10.1063/5.0081198
[2022] Encapsulant-Dependent Effects of Long-Term Low-Temperature Annealing on Interstitial Defects in Mg-Ion-Implanted GaN
DOI: https://doi.org/10.1007/s11664-022-09431-y
[2021] Effect of annealing time and pressure on electrical activation and surface morphology of Mg-implanted GaN annealed at 1300 °C in ultra-high-pressure nitrogen ambient
DOI: https://doi.org/10.35848/1882-0786/ac39b0
[2021] Breakdown Electric Field of GaN p+-n and p-n+Junction Diodes With Various Doping Concentrations
DOI: https://doi.org/10.1109/led.2021.3125328
[2021] Effects of the sequential implantation of Mg and N ions into GaN for p-type doping
DOI: https://doi.org/10.35848/1882-0786/ac2ae7
[2021] Simulation of channeled implantation of magnesium ions in gallium nitride
DOI: https://doi.org/10.35848/1882-0786/ac2a55
[2021] Corner Shape Control of GaN Trench Structure Formed by Inductively Coupled Plasma Reactive Ion Etching
DOI: https://doi.org/10.7567/ssdm.2021.d-7-07
[2021] Impact of channel mobility on design optimization of 600–3300 V-class high-speed GaN vertical-trench MOSFETs based on TCAD simulation
DOI: https://doi.org/10.35848/1882-0786/ac18af
[2021] Photoionization cross section ratio of nitrogen-site carbon in GaN under sub-bandgap-light irradiation determined by isothermal capacitance transient spectroscopy
DOI: https://doi.org/10.35848/1882-0786/ac16ba
[2021] Electrical Properties of P-Channel GaN MOSFETs Fabricated by Mg-implantation and Ultra-High-Pressure Annealing
[2021] Suraface morphology of Si-doped GaN sputtered layer on N-polar GaN substrate
[2021] Electrical Properties of SiO 2 /GaN MOS Capacitors Fabricated on Mg-Implanted GaN Activated by Ultra-High-Pressure Annealing
[2021] Design and demonstration of nearly-ideal edge termination for GaN p–n junction using Mg-implanted field limiting rings
DOI: https://doi.org/10.35848/1882-0786/ac0b09
[2021] Inhibition of Mg activation in p-type GaN caused by thin AlGaN capping layer and impact of designing hydrogen desorption pathway
DOI: https://doi.org/10.35848/1882-0786/ac057d
[2021] Channeled implantation of magnesium ions in gallium nitride for deep and low-damage doping
DOI: https://doi.org/10.35848/1882-0786/ac039e
[2021] Impact ionization coefficients and critical electric field in GaN
DOI: https://doi.org/10.1063/5.0050793
[2021] Isochronal annealing study of Mg-implanted p-type GaN activated by ultra-high-pressure annealing
DOI: https://doi.org/10.35848/1882-0786/abf4f3
[2021] Contribution of the carbon-originated hole trap to slow decays of photoluminescence and photoconductivity in homoepitaxial n-type GaN layers
DOI: https://doi.org/10.1063/5.0041287
[2021] Formation of highly vertical trenches with rounded corners via inductively coupled plasma reactive ion etching for vertical GaN power devices
DOI: https://doi.org/10.1063/5.0040920
[2021] Behaviors of vacancy-type defects in Mg-implanted GaN during ultra-high-pressure annealing studied by using a monoenergetic positron beam
DOI: https://doi.org/10.1117/12.2575972
[2021] Mg-implanted bevel edge termination structure for GaN power device applications
DOI: https://doi.org/10.1063/5.0039183
[2021] X-ray photoelectron spectroscopy study on effects of ultra-high-pressure annealing on surface of Mg-ion-implanted GaN
DOI: https://doi.org/10.35848/1347-4065/abe609
[2021] Reduction of ultra-high-pressure annealing temperature for Mg-ion-implanted GaN
[2021] Temperature dependence of impact ionization coefficients of electrons and holes in GaN
[2021] Contribution to electrical properties of carrier recombination of Slow decay in GaN epilayers
[2021] Diffusion of Mg and H atoms in Mg-implanted GaN by ultra-high-pressure annealing
[2021] Effect of Nitrogen Plasma Treatment on Characteristics of GaN Trench MOSFETs
[2021] Generation of hole trap in p-GaN layer by forward current injection
[2021] Effect of forward bias application on 0.88 eV hole trap in hydrogen-implanted n + p GaN
[2021] Nitrogen-displacement-related electron traps in n-type GaN grown on a GaN freestanding substrate
[2021] Nitrogen-displacement-related electron traps in n-type GaN grown on a GaN freestanding substrate
DOI: https://doi.org/10.1063/5.0035235

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AI 要約（直近 5 年の研究成果）

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