Atsushi Tanaka 研究室

主宰者：Atsushi Tanaka

名古屋大学

AI 要約（直近 5 年の研究成果）

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研究成果（46 件）

[2026] Controlling impurity concentration profiles in p–n and n–p junctions by halide vapor phase epitaxy with n/p-separated nozzles
DOI: https://doi.org/10.1063/5.0325320
[2026] Altermagnetism and weak ferromagnetism
DOI: https://doi.org/10.1038/s41535-026-00900-9
[2025] Power degradation mechanism of UV-C LEDs under current stress
DOI: https://doi.org/10.1117/12.3041549
[2024] Impacts of vacancy complexes on the room-temperature photoluminescence lifetimes of state-of-the-art GaN substrates, epitaxial layers, and Mg-implanted layers
DOI: https://doi.org/10.1063/5.0201931
[2024] Laser slicing of GaN
DOI: https://doi.org/10.1117/12.3004144
[2024] Demonstration of recycling process for GaN substrates using laser slicing technique towards cost reduction of GaN vertical power MOSFETs
DOI: https://doi.org/10.35848/1882-0786/ad269d
[2024] Development of residual stress evaluation method for polymer products using THz polarization measurement
DOI: https://doi.org/10.1016/j.cirp.2024.04.069
[2023] 15 GHz GaN Hi–Lo IMPATT Diodes With Pulsed Peak Power of 25.5 W
DOI: https://doi.org/10.1109/ted.2023.3345822
[2023] Transient thermal analysis of GaN HEMT under TDD-LTE signal operation
DOI: https://doi.org/10.1109/apmc57107.2023.10439737
[2023] Large-scale DFT calculations of multi-component glass systems (SiO2)0.70(Al2O3)0.13(XO)0.17 (X = Mg, Ca, Sr, Ba) : Accuracy of classical force fields
DOI: https://doi.org/10.1016/j.jnoncrysol.2023.122714

続きを表示（残り 36 件）

[2023] Surface Activated Thermo-compression Bonding of GaN to Carbon-composite and Diamond Substrate for Heat Dissipation System Applications
DOI: https://doi.org/10.7567/ssdm.2023.ps-3-08
[2023] GaN Vertical p-n Junction Diode on GaN Substrate Grown by Na-Flux Method with Avalanche Capability and Demonstration of 100 A (pulsed) Operation
DOI: https://doi.org/10.7567/ssdm.2023.n-1-04
[2023] Junction Diameter Dependence of Oscillation Frequency of GaN IMPATT Diode Up to 21 GHz
DOI: https://doi.org/10.1109/led.2023.3285938
[2023] Investigation of Electrical Properties of N‐Polar AlGaN/AlN Heterostructure Field‐Effect Transistors
DOI: https://doi.org/10.1002/pssa.202200871
[2023] Reverse Leakage Mechanism of Dislocation-Free GaN Vertical p-n Diodes
DOI: https://doi.org/10.1109/led.2023.3274306
[2023] Impact of Sidewall Conditions on Internal Quantum Efficiency and Light Extraction Efficiency of Micro‐LEDs (Advanced Optical Materials 10/2023)
DOI: https://doi.org/10.1002/adom.202370029
[2023] Synergistic Effect between Fe4+ and Co4+ on Oxygen Evolution Reaction Catalysis for CaFe1−xCoxO3
DOI: https://doi.org/10.2320/matertrans.mt-mg2022021
[2023] Impact of Sidewall Conditions on Internal Quantum Efficiency and Light Extraction Efficiency of Micro‐LEDs
DOI: https://doi.org/10.1002/adom.202203128
[2023] High-Pressure Synthesis and Magnetic Property of a Novel Ferrimagnetic Quadruple Perovskite YMn3Co4O12
DOI: https://doi.org/10.2320/matertrans.mt-mg2022004
[2023] Development of High-Resolution Nuclear Emulsion Plates for Synchrotron X-Ray Topography Observation of Large-Size Semiconductor Wafers
DOI: https://doi.org/10.1007/s11664-023-10270-8
[2022] Substitutional diffusion of Mg into GaN from GaN/Mg mixture
DOI: https://doi.org/10.35848/1882-0786/ac9c83
[2022] Evaluation of electroluminescence of AlGaN/GaN HEMT on free-standing GaN substrate
DOI: https://doi.org/10.35848/1882-0786/ac8782
[2022] Laser slice thinning of GaN-on-GaN high electron mobility transistors
DOI: https://doi.org/10.1038/s41598-022-10610-4
[2022] “Regrowth-free” fabrication of high-current-gain AlGaN/GaN heterojunction bipolar transistor with N-p-n configuration
DOI: https://doi.org/10.35848/1882-0786/ac6197
[2022] Improved device performance of vertical GaN-on-GaN nanorod Schottky barrier diodes with wet-etching process
DOI: https://doi.org/10.1063/5.0083194
[2022] Microscopic origins and stability of ferromagnetism in <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:msub><mml:mi>Co</mml:mi><mml:mn>3</mml:mn></mml:msub><mml:msub><mml:mi>Sn</mml:mi><mml:mn>2</mml:mn></mml:msub><mml:msub><mml:mi mathvariant="normal">S</mml:mi><mml:mn>2</mml:mn></mml:msub></mml:mrow></mml:math>
DOI: https://doi.org/10.1103/physrevb.105.014415
[2022] Effect of beam current on defect formation by high-temperature implantation of Mg ions into GaN
DOI: https://doi.org/10.35848/1882-0786/ac481b
[2022] Bias-Dependence of Electroluminescence in AlGaN/GaN High-Electron-Mobility Transistors on SiC Substrate
DOI: https://doi.org/10.1109/jeds.2022.3163379
[2021] Smart-cut-like laser slicing of GaN substrate using its own nitrogen
DOI: https://doi.org/10.1038/s41598-021-97159-w
[2021] “Regrowth-free” Fabrication of AlGaN/GaN HBT with N-p-n Configuration
DOI: https://doi.org/10.7567/ssdm.2021.d-1-05
[2021] Impact of SiN passivation film stress on electroluminescence characteristics of AlGaN/GaN high-electron-mobility transistors
DOI: https://doi.org/10.35848/1882-0786/ac1f40
[2021] Gallium nitride wafer slicing by a sub-nanosecond laser: effect of pulse energy and laser shot spacing
DOI: https://doi.org/10.1007/s00339-021-04808-y
[2021] Demonstration of high thermal performance GaN-on-graphite composite bonded substrate for application in III-V nitride electronics
DOI: https://doi.org/10.35848/1882-0786/ac15c0
[2021] Correlation between film stress and EL color in GaN HEMTs on SiC substrate
[2021] Impact of gate electrode formation process on Al2O3/GaN interface properties and channel mobility
DOI: https://doi.org/10.35848/1882-0786/ac0ffa
[2021] Crystal Structures and Electronic States of High-Pressure-Synthesized (1-x)PbVO3-xBiCrO3 Solid Solutions
DOI: https://doi.org/10.1080/21870764.2021.1944556
[2021] Vertical GaN-on-GaN nanowire Schottky barrier diodes by top-down fabrication approach
DOI: https://doi.org/10.35848/1347-4065/ac06b5
[2021] Low Temperature Bonding of GaN and Carbon Composite via Au Capping Layer Activated by Ar Fast Atom Bombardment
DOI: https://doi.org/10.23919/icep51988.2021.9451955
[2021] Large Molecular Cluster Formation from Liquid Materials and Its Application to ToF-SIMS
DOI: https://doi.org/10.3390/qubs5020010
[2021] Detection and classification of dislocations in GaN by optical microscope using birefringence
DOI: https://doi.org/10.1117/12.2577164
[2021] Suppression of the regrowth interface leakage current in AlGaN/GaN HEMTs by unactivated Mg doped GaN layer
DOI: https://doi.org/10.1063/5.0034584
[2021] Fabrication of GaN cantilever on GaN substrate by photo-electrochemical etching
DOI: https://doi.org/10.35848/1882-0786/abe657
[2021] Experimental demonstration of GaN IMPATT diode at X-band
DOI: https://doi.org/10.35848/1882-0786/abe3dc
[2021] Effect of Dislocations in Nitride Semiconductors on Device Characteristics
[2021] Experimental demonstration of GaN IMPATT diode at X-band
[2021] Fabrication of AlGaN/GaN HBT with Continuous-grown N-p-n Junctions

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AI 要約（直近 5 年の研究成果）

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関連研究室(8 件)

研究成果（46 件）

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