Nobuyuki Ikarashi 研究室

主宰者：Nobuyuki Ikarashi

名古屋大学

AI 要約（直近 5 年の研究成果）

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研究成果（39 件）

[2026] Electrical activity of Mg clustering at nanoscale defects induced by N ion implantation in GaN
DOI: https://doi.org/10.1063/5.0335166
[2026] Electrical activity of Mg clustering at nanoscale defects induced by N ion implantation in GaN
DOI: https://doi.org/10.48505/nims.6368
[2026] Self-aligned and self-limiting van der Waals epitaxy of monolayer MoS2 for scalable 2D electronics
DOI: https://doi.org/10.1038/s41467-026-68320-8
[2025] Misfit accommodation in a single interface atomic layer at a highly lattice-mismatched InN/GaN
DOI: https://doi.org/10.1063/5.0231584
[2025] p-type layer formation study for Ga2O3 by employing Ni ion implantation with two-step oxygen plasma and thermal annealing
DOI: https://doi.org/10.1063/5.0282789
[2025] Structure of the very first atomic layer of Ga oxide on GaN at GaN oxidation front
DOI: https://doi.org/10.1063/5.0274521
[2025] Characterization of MOS Channels Having AlSiO/AlN/GaN Gate Structures on m-plane and c-plane: Mobility, Threshold Voltage, and its Stability
DOI: https://doi.org/10.1109/drc66027.2025.11105751
[2025] GaN and Ga2O3 Diodes Study by Applying Ni and O as p-type Dopants
DOI: https://doi.org/10.7567/ssdm.2025.m-4-02
[2025] Direct observation of atomic configuration of a highly oriented MoS2 film/α-Al2O3 (0001) using atomic resolution electron microscopy
DOI: https://doi.org/10.48505/nims.6066
[2025] Direct observation of atomic configuration of a highly oriented MoS2 film/α-Al2O3 (0001) using atomic resolution electron microscopy
DOI: https://doi.org/10.1063/5.0295643

続きを表示（残り 29 件）

[2024] Transport Properties in GaN Metal–Oxide–Semiconductor Field‐Effect Transistor Almost Free of Interface Traps with AlSiO/AlN/p‐Type GaN Gate Stack
DOI: https://doi.org/10.1002/pssr.202400141
[2024] Discovering the incorporation limits for wurtzite AlPyN1−y grown on GaN by metalorganic vapor phase epitaxy
[2024] Impact of Sequential N Ion Implantation on Extended Defects and Mg Distribution in Mg Ion‐Implanted GaN
DOI: https://doi.org/10.1002/pssr.202400074
[2024] High Channel Mobility and Stable E-Mode Operation in AlSiO/AlN/m-Plane P-Type GaN MOSFETs with Little Temperature Dependence of the Threshold Voltage
DOI: https://doi.org/10.1109/iedm50854.2024.10873525
[2024] Observation of 2D-magnesium-intercalated gallium nitride superlattices
DOI: https://doi.org/10.1038/s41586-024-07513-x
[2024] Discovering the incorporation limits for wurtzite AlPyN1−y grown on GaN by metalorganic vapor phase epitaxy
DOI: https://doi.org/10.1063/5.0225115
[2024] Suppression of positive bias instability by inserting polarized AlN interlayer at AlSiO/p-type GaN interface in metal–oxide–semiconductor field-effect transistor
DOI: https://doi.org/10.1063/5.0214698
[2024] Engineering of Channel Mobility and Threshold Voltage in AlSiO/AlN/p-type GaN Metal–Oxide–Semiconductor Field-Effect Transistors
DOI: https://doi.org/10.7567/ssdm.2024.d-7-01
[2024] Engineered interface charges and traps in GaN MOSFETs providing high channel mobility and E-mode operation
DOI: https://doi.org/10.35848/1347-4065/ad8c4f
[2023] Metal Stop Laser Drilling for Blind via Holes of GaN‐on‐GaN Devices
DOI: https://doi.org/10.1002/pssa.202200739
[2023] Fabrication of β-Mn type Co–Zn–Mn(001) film on MgO single crystal substrate
DOI: https://doi.org/10.1063/9.0000488
[2023] Polarization Engineering in AlSiO/p-type GaN MOSFETs Using AIN Interlayers Formed by Plasma-Enhanced Atomic Layer Deposition
DOI: https://doi.org/10.1109/iedm45741.2023.10413714
[2023] スパッタ成膜MoS2の基板上での原子分解能電子顕微鏡観察
[2023] Over 200 cm2 V−1 s−1 of electron inversion channel mobility for AlSiO/GaN MOSFET with nitrided interface
DOI: https://doi.org/10.35848/1882-0786/ace33c
[2023] Annealing properties of vacancy-type defects in ion implanted GaN during ultra-high-pressure annealing studied by using a monoenergetic positron beam
DOI: https://doi.org/10.1117/12.2646233
[2023] Pressure Effect on Diffusion of Native Defects and Mg Impurity in Mg‐Ion‐Implanted GaN during Ultrahigh‐Pressure Annealing
DOI: https://doi.org/10.1002/pssr.202300035
[2022] Effect of beam current on defect formation by high-temperature implantation of Mg ions into GaN
DOI: https://doi.org/10.35848/1882-0786/ac481b
[2022] Effect of Ultra‐High‐Pressure Annealing on Defect Reactions in Ion‐Implanted GaN Studied by Positron Annihilation
DOI: https://doi.org/10.1002/pssb.202200183
[2022] Elucidation of PVD MoS2 Film Formation Process and its Structure Focusing on Sub-Monolayer Region
[2022] Process engineering of GaN power devices via selective-area p-type doping with ion implantation and ultra-high-pressure annealing
DOI: https://doi.org/10.1063/5.0107921
[2022] Effect of Ultra‐High‐Pressure Annealing on Defect Reactions in Ion‐Implanted GaN Studied by Positron Annihilation
DOI: https://doi.org/10.1002/pssb.202270028
[2022] Nanoscale Characteristics of a Room-Temperature Coexisting Phase of Magnetic Skyrmions and Antiskyrmions for Skyrmion–Antiskyrmion-Based Spintronic Applications
DOI: https://doi.org/10.1021/acsanm.2c03162
[2022] Atomic resolution analysis of extended defects and Mg agglomeration in Mg-ion-implanted GaN and their impacts on acceptor formation
DOI: https://doi.org/10.1063/5.0097866
[2021] Elucidation of PVD MoS2 film formation process and its structure focusing on sub-monolayer region
DOI: https://doi.org/10.35848/1347-4065/ac3fc9
[2021] [Young Scientist Presentation Award Speech] Effect of beam current on the formation of defects by high-temperature implantation of Mg ions into GaN
[2021] Propagation of threading dislocations and effects of Burgers vectors in HVPE-grown GaN bulk crystals on Na-flux-grown GaN substrates
DOI: https://doi.org/10.1063/5.0053766
[2021] Effect of beam current on the formation of defects by high-temperature implantation of Mg ions into GaN
[2021] Growth Mechanism of PVD MoS2 Film from Sub-Monolayer Region
DOI: https://doi.org/10.7567/ssdm.2021.h-2-05
[2021] Effects of the sequential implantation of Mg and N ions into GaN for p-type doping
DOI: https://doi.org/10.35848/1882-0786/ac2ae7

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AI 要約（直近 5 年の研究成果）

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関連研究室(8 件)

研究成果（39 件）

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