Osamu Oda 研究室

AI 要約（直近 5 年の研究成果）

※ AI（Claude）が、公開されている論文要旨から研究の問い・手法・主要な発見を事実情報として抽出・再構成して自動生成しています。誤りを含む可能性があるため、正確性は研究室公式情報でご確認ください。

研究成果（15 件）

• [2025] GaN and Ga<sub>2</sub>O<sub>3</sub> Diodes Study by Applying Ni and O as p-type Dopants
  DOI: https://doi.org/10.7567/ssdm.2025.m-4-02
• [2025] p-type layer formation study for Ga2O3 by employing Ni ion implantation with two-step oxygen plasma and thermal annealing
  DOI: https://doi.org/10.1063/5.0282789
• [2025] Radical enhanced growth of GaN on Si with the buffer layer of GaN at a low temperature of 600 °C
  DOI: https://doi.org/10.1016/j.jcrysgro.2025.128089
• [2024] Epitaxial growth of high-quality GaN with a high growth rate at low temperatures by radical-enhanced metalorganic chemical vapor deposition
  DOI: https://doi.org/10.1038/s41598-024-61501-9
• [2024] Nitrogen admixture effects on growth characteristics and properties of carbon nanowalls
  DOI: https://doi.org/10.1016/j.tsf.2024.140322
• [2024] Low-temperature growth at 225 °C and characterization of carbon nanowalls synthesized by radical injection plasma-enhanced chemical vapor deposition
  DOI: https://doi.org/10.1016/j.vacuum.2024.113180
• [2023] Gas-phase study of the behavior of trimethyl gallium and triethyl gallium by optical emission spectroscopy and quadrupole mass spectroscopy for the growth of GaN by REMOCVD (radical-enhanced metalorganic chemical vapor deposition)
  DOI: https://doi.org/10.35848/1347-4065/acfd34
• [2023] The Effect of V/III Ratio on the Morphology and Structure of the Homo-epitaxial GaN Growth on Bulk GaN Substrates by Radical Enhanced Metal-Organic Chemical Vapor Deposition (REMOCVD)
  DOI: https://doi.org/10.7567/ssdm.2023.ps-11-19
• [2023] Synthesis of highly dense and multi-branched carbon nanowalls by two-step growth combining different plasma chemical vapor deposition methods
  DOI: https://doi.org/10.1016/j.vacuum.2023.112118
• [2023] GaN damage-free cyclic etching by sequential exposure to Cl2 plasma and Ar plasma with low Ar+-ion energy at substrate temperature of 400 °C
  DOI: https://doi.org/10.1063/5.0131685

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