Takashi Yoda 研究室

主宰者：Takashi Yoda

東京工業大学

AI 要約（直近 5 年の研究成果）

要約はまだ生成されていません。

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研究成果（35 件）

[2026] Lattice-Matched InAlN/GaN D-Mode MIS-HEMT on SiC for High-Current Operation and Low-Loss 100-V Double-Pulse Switching
DOI: https://doi.org/10.1109/access.2026.3671093
[2025] Towards High Spatial Contactless Temperature Monitoring in GaN Devices Using Thermoreflectance
DOI: https://doi.org/10.1109/impact67645.2025.11281726
[2025] Effect of Ion Implantation on Suppression of Stacking Fault Expansion in 4H-SiC
DOI: https://doi.org/10.23919/icep-iaac64884.2025.11003027
[2025] Electron density estimation of forward-biased SiC pn diodes by LO phonon-plasmon coupled Raman spectra
DOI: https://doi.org/10.23919/iwjt66253.2025.11072897
[2024] 3D Stress Mapping in Processed SiC Wafers by Hyperspectral Raman Spectroscopy
DOI: https://doi.org/10.1109/impact63555.2024.10818937
[2024] Transient current measurements and analysis in charge pump method for SiC p-MOSFETs
DOI: https://doi.org/10.7567/ssdm.2024.d-5-03
[2024] Microscopic mechanisms of nitrogen doping in silicon carbide during epitaxial growth
DOI: https://doi.org/10.35848/1882-0786/ad524c
[2023] Design and fabrication results of Z-gate layout MOSFETs for radiation hardness integrated circuit
DOI: https://doi.org/10.35848/1347-4065/acb0d7
[2023] Simulation of a ring oscillator operation during <i>γ</i>-ray irradiation using the TID response model of MOSFETs and its experimental verification
DOI: https://doi.org/10.35848/1347-4065/acb218
[2023] Design and Fabrication Results of Z-gate Layout MOSFETs for Radiation Hardness Integrated Circuit

続きを表示（残り 25 件）

[2023] Development of Raman Spectroscopy for Defect Analysis in SiC Devices
DOI: https://doi.org/10.1109/impact59481.2023.10348747
[2023] Theoretical Study of Nitrogen Incorporation at the Steps on SiC(0001) Surface during CVD Growth
DOI: https://doi.org/10.7567/ssdm.2023.m-1-03
[2023] Atomic and Electronic Structures of Basal Plane Dislocations (BPDs) in 4H-SiC -Atomistic Origin of Bipolar Degradation of SiC Devices-
DOI: https://doi.org/10.7567/ssdm.2023.n-2-05
[2023] Vacancy-type defects in AlInN/AlN/GaN structures probed by monoenergetic positron beam
DOI: https://doi.org/10.1063/5.0153128
[2023] Simulation of a ring oscillator operation during γ-ray irradiation using the TID response model of MOSFETs and its experimental verification
[2022] Two-pads per electrode in-situ test structure for micron-scale flip-chip bonding reliability of chip-on-chip device
DOI: https://doi.org/10.1109/icmts50340.2022.9898248
[2022] Total ionizing dose effect on 2-D array data transfer ICs designed and fabricated by 0.18 <i>μ</i> m CMOS technology
DOI: https://doi.org/10.35848/1347-4065/ac48d0
[2022] CMOS Inverter-Base Ring Oscillator Design and Evaluation Against g-ray Total Ionizing Dose Effect
DOI: https://doi.org/10.7567/ssdm.2022.k-9-02
[2022] A Z-gate Layout MOSFET Design and Verification of Radiation Hardness against γ-ray Total Ionizing Dose Effect
DOI: https://doi.org/10.7567/ssdm.2022.k-2-05
[2022] CMOS Inverter-Base Ring Oscillator Design and Evaluation Against gray Total Ionizing Dose Effect
[2022] A Z-gate Layout MOSFET Design and Verification of Radiation Hardness against γ-ray Total Ionizing Dose Effect
[2022] Minority carrier lifetime extraction methodology based on parallel pn diodes with a field plate
[2022] Minority carrier lifetime extraction methodology based on parallel pn diodes with a field plate
DOI: https://doi.org/10.35848/1347-4065/ac6215
[2022] Total ionizing dose effect on 2-D array data transfer ICs designed and fabricated by 0.18 μm CMOS technology
[2021] Radiation Hardness Evaluation and Radiation Degradation Model of ELT
[2021] First-principles and thermodynamic analysis for gas phase reactions and structures of the SiC(0001) surface under conventional CVD and Halide CVD environments
[2021] Dependence of total ionizing dose effect of nMOS transistors on the on/off duty ratio of a gate voltage
[2021] Introduction of surface field-plate for accurate minority carrier lifetime estimation of 4H-SiC epitaxial layer
[2021] Dependence of total ionizing dose effect of nMOS transistors on the on/off duty ratio of a gate voltage
DOI: https://doi.org/10.35848/1347-4065/ac25cd
[2021] CMOS 2-D Array Data Transfer Circuit Design and Evaluation for Use in A Radiation Environment
DOI: https://doi.org/10.7567/ssdm.2021.l-2-05
[2021] First-principles and thermodynamic analysis for gas phase reactions and structures of the SiC(0001) surface under conventional CVD and Halide CVD environments
DOI: https://doi.org/10.35848/1347-4065/ac1127
[2021] CMOS 2-D Array Data Transfer Circuit Design and Evaluation for Use in A Radiation Environment
[2021] Radiation hardness evaluation of ELT in Ring-oscillator
[2021] Relationship between crystal orientation rotated domain and v-pit formation during GaN growth on Si substrates
[2021] ELT(Enclosed Layout Transistor)による耐放射線CMOS集積回路の設計

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AI 要約（直近 5 年の研究成果）

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関連研究室(8 件)

研究成果（35 件）

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