Takashi Suemasu 研究室
主宰者：Takashi Suemasu
筑波大学
AI 要約（直近 5 年の研究成果）
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外部リンク
関連研究室(8 件)
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- 地球惑星科学Hirochika Sumino 研究室東京大学論文 117 件·共通: AR, 情報工学
研究成果（100 件）
- DOI: https://doi.org/10.1021/acsami.6c03772
- [2026] Current status of room temperature magnetic compensation in impurity-doped Mn4N epitaxial thin filmsDOI: https://doi.org/10.48505/nims.6362
- DOI: https://doi.org/10.1080/14686996.2026.2688056
- DOI: https://doi.org/10.1016/j.tsf.2026.140980
- DOI: https://doi.org/10.1016/j.matdes.2026.116040
- DOI: https://doi.org/10.7567/ssdm.2025.e-2-02
- DOI: https://doi.org/10.1063/5.0229016
- DOI: https://doi.org/10.1016/j.apsusc.2025.164119
- DOI: https://doi.org/10.1038/s41427-025-00611-w
- DOI: https://doi.org/10.1103/lx38-nzp9
続きを表示（残り 90 件）閉じる
- DOI: https://doi.org/10.1109/pvsc59419.2025.11132695
- DOI: https://doi.org/10.1016/j.mssp.2025.109732
- DOI: https://doi.org/10.1016/j.materresbull.2025.113581
- DOI: https://doi.org/10.1021/acsaem.5c00826
- DOI: https://doi.org/10.1039/d4ra06320a
- DOI: https://doi.org/10.1039/d5ce00061k
- DOI: https://doi.org/10.35848/1347-4065/ae2588
- DOI: https://doi.org/10.35848/1347-4065/ae23d8
- DOI: https://doi.org/10.35848/1347-4065/ae1e02
- DOI: https://doi.org/10.35848/1347-4065/ae18dd
- DOI: https://doi.org/10.35848/1347-4065/ae1b13
- DOI: https://doi.org/10.1103/w6gs-wdq3
- [2025] First-principles study on the dissociation of As<sub>2</sub> on BaSi<sub>2</sub> (100) surfaceDOI: https://doi.org/10.35848/1347-4065/ae09b7
- DOI: https://doi.org/10.7567/ssdm.2025.n-6-06
- DOI: https://doi.org/10.7567/ssdm.2025.h-3-04
- DOI: https://doi.org/10.1016/j.mssp.2024.108301
- DOI: https://doi.org/10.1016/j.mssp.2024.108296
- DOI: https://doi.org/10.1063/5.0190025
- DOI: https://doi.org/10.1063/5.0172322
- [2024] Composition dependence of crystalline and magnetic properties in Mn4−Ge N epitaxial thin filmsDOI: https://doi.org/10.1016/j.jmmm.2024.171813
- [2024] Green synthesis of nickel oxide hole transport layer via aloe vera extract-assisted sol-gel processDOI: https://doi.org/10.1007/s10971-023-06296-3
- [2024] Thermoelectric properties of low-temperature-grown polycrystalline InAs1−<i>x</i>Sb<i>x</i> filmsDOI: https://doi.org/10.1063/5.0178996
- DOI: https://doi.org/10.1038/s41598-024-70530-3
- DOI: https://doi.org/10.1039/d4ya00505h
- DOI: https://doi.org/10.36463/idw.2024.0367
- DOI: https://doi.org/10.36463/idw.2024.1345
- DOI: https://doi.org/10.1149/ma2024-02674646mtgabs
- DOI: https://doi.org/10.1149/ma2024-02322371mtgabs
- DOI: https://doi.org/10.1103/physrevmaterials.8.l091403
- DOI: https://doi.org/10.36463/idw.2024.1333
- DOI: https://doi.org/10.1021/acsami.4c06859
- DOI: https://doi.org/10.7567/ssdm.2024.k-6-02
- [2024] Significant improvement of Li-ion battery anode properties of Si thin films by preparing interlayerDOI: https://doi.org/10.7567/ssdm.2024.k-6-05
- DOI: https://doi.org/10.1007/s11664-024-11372-7
- [2024] Record-High Power Factors in Polycrystalline Ge Thin Films for Flexible Thermoelectric DevicesDOI: https://doi.org/10.7567/ssdm.2024.f-1-02
- DOI: https://doi.org/10.35848/1347-4065/ad27a5
- DOI: https://doi.org/10.1063/5.0215560
- DOI: https://doi.org/10.1016/j.actamat.2024.120230
- DOI: https://doi.org/10.1016/j.jlumin.2024.120797
- DOI: https://doi.org/10.1038/s41598-024-56282-0
- DOI: https://doi.org/10.1109/pvsc57443.2024.10749290
- DOI: https://doi.org/10.1021/acs.cgd.4c00196
- DOI: https://doi.org/10.1002/aelm.202300875
- DOI: https://doi.org/10.1038/s41427-024-00536-w
- DOI: https://doi.org/10.1116/6.0003503
- DOI: https://doi.org/10.1016/j.jmmm.2024.171973
- DOI: https://doi.org/10.1116/6.0003505
- DOI: https://doi.org/10.35848/1347-4065/ad0ef3
- DOI: https://doi.org/10.1063/5.0165791
- DOI: https://doi.org/10.1063/5.0165783
- DOI: https://doi.org/10.7567/ssdm.2023.m-6-02
- DOI: https://doi.org/10.7567/ssdm.2023.m-7-06
- DOI: https://doi.org/10.7567/ssdm.2023.m-6-01
- DOI: https://doi.org/10.7567/ssdm.2023.e-8-02
- DOI: https://doi.org/10.1016/j.matdes.2023.112116
- DOI: https://doi.org/10.1109/pvsc48320.2023.10360019
- [2023] High-electron mobility P-doped polycrystalline GeSn layers formed on insulators at low temperaturesDOI: https://doi.org/10.1063/5.0152677
- DOI: https://doi.org/10.1021/acs.cgd.3c00163
- DOI: https://doi.org/10.1016/j.tsf.2023.139823
- DOI: https://doi.org/10.1016/j.jphotochem.2023.114623
- DOI: https://doi.org/10.1063/9.0000412
- DOI: https://doi.org/10.1021/acsaelm.2c01381
- DOI: https://doi.org/10.1063/9.0000411
- DOI: https://doi.org/10.35848/1347-4065/aca912
- DOI: https://doi.org/10.1016/j.jpcs.2022.111199
- [2022] Structural design of BaSi<sub>2</sub> solar cells with a-SiC electron-selective transport layersDOI: https://doi.org/10.35848/1347-4065/acab09
- DOI: https://doi.org/10.35848/1347-4065/acab08
- DOI: https://doi.org/10.1002/pip.3658
- DOI: https://doi.org/10.1021/acsami.2c14785
- DOI: https://doi.org/10.35848/1347-4065/aca770
- [2022] High thermoelectric power factors in sputter-deposited polycrystalline n-type BaSi<sub>2</sub> filmsDOI: https://doi.org/10.35848/1347-4065/aca59a
- DOI: https://doi.org/10.35848/1347-4065/aca4d7
- DOI: https://doi.org/10.35848/1347-4065/aca4d9
- DOI: https://doi.org/10.1021/acsami.2c14152
- DOI: https://doi.org/10.35848/1347-4065/aca257
- [2022] Metal-Catalyzed Nanostructured Silicon Films as Potential Anodes for Flexible Rechargeable BatteriesDOI: https://doi.org/10.1021/acsanm.2c04476
- DOI: https://doi.org/10.1016/j.jmmm.2022.170050
- [2022] Anisotropic magnetoresistance in Mn4−<i>x</i>Ni<i>x</i>N and the change in the crystalline fieldDOI: https://doi.org/10.1063/5.0107172
- [2022] Group IV Semiconductor Alloy Thin Films for Environmentally Friendly Thermoelectric GeneratorsDOI: https://doi.org/10.7567/ssdm.2022.c-1-01
- DOI: https://doi.org/10.7567/ssdm.2022.b-3-03
- DOI: https://doi.org/10.1016/j.jlumin.2022.119312
- DOI: https://doi.org/10.1038/s41598-022-19221-5
- [2022] Investigating Defect-Assisted Emission in BaSi<sub>2</sub> by Power Dependent PhotoluminescenceDOI: https://doi.org/10.1109/icse56004.2022.9863086
- DOI: https://doi.org/10.1038/s41598-022-18072-4
- DOI: https://doi.org/10.1016/j.tsf.2022.139426
- DOI: https://doi.org/10.1080/27660400.2022.2082235
- DOI: https://doi.org/10.1063/5.0092080
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