Makoto Miyoshi 研究室

主宰者：Makoto Miyoshi

神戸大学

AI 要約（直近 5 年の研究成果）

Miyoshi研究室は、窒化ガリウム（GaN）を中心とした化合物半導体の成長と電子デバイス開発に取り組んでいます。研究の主な対象は、GaNおよびその関連材料（AlGaInNやAlInNなどの混合結晶）の物性を深く理解し、これらを用いた高性能なトランジスタやダイオード、光検出器といった電子部品の実現です。特に、デバイスの電流特性、耐圧性、光学特性の向上を目指しています。手法としては、金属有機化学気相成長法（MOCVD）を用いた高品質な薄膜の成長と、X線回折や分光測定などの詳細な物性評価が中心となっています。さらに、デバイスシミュレーションにより理論的な理解を深め、実測結果との比較検討を行っています。単結晶AlN基板など高品質な基板の活用により、材料の結晶性向上にも注力しています。これらの研究を通じて、従来比で大幅に性能が向上したトランジスタやダイオード、さらには光の無線給電に用いる光電変換素子などの実現に成功しています。研究室の成果は、次世代の省エネルギーデバイスや高周波電力素子の実用化に貢献するものと期待されています。

※ AI（Claude）が、公開されている論文要旨から研究の問い・手法・主要な発見を事実情報として抽出・再構成して自動生成しています。誤りを含む可能性があるため、正確性は研究室公式情報でご確認ください。

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研究成果（64 件）

[2025] Novel orthotopic patient-derived xenograft model using human pancreatic cancer tissue fragments to recapitulate distant metastasis and cancer-related hypercoagulability
DOI: https://doi.org/10.1007/s00795-025-00425-3
[2025] GaN-based n–p–n heterojunction bipolar transistors employing Mg-doped GaInN multiple-quantum well structure as p-type base region
DOI: https://doi.org/10.35848/1347-4065/ae11e4
[2025] Design and Simulation of III‐Nitride‐Based Polarization‐Matched Resonant‐Tunneling Diodes with Quaternary AlGaInN Quantum Wells and Ternary AlInN Double Barriers
DOI: https://doi.org/10.1002/pssr.202500199
[2025] GaN-based n-p-n HBTs with Mg-doped GaInN MQWs as p-type base region
DOI: https://doi.org/10.7567/ssdm.2025.m-6-03
[2025] Fabrication and characterization of AlGaInN/GaInN/GaN n–p–n heterojunction bipolar transistors with a p +-GaN contact layer
DOI: https://doi.org/10.35848/1347-4065/ade7dd
[2025] Investigation of the Preventive Effects and Safety of Increasing Antimicrobial Agent Dose in Patients Who Are Overweight and Undergoing Orthopedic Surgery for Surgical Site Infection
DOI: https://doi.org/10.5649/jjphcs.51.300
[2025] Evaluation of the Predictive Performance of Two Vancomycin TDM Analysis Software Programs in Pediatric Patients
DOI: https://doi.org/10.5649/jjphcs.51.805
[2024] Characterizations of Subbandgap Optical Absorption in Undoped‐GaN and 90 nm‐Thick Al1−xInxN Thin Film on Sapphire Substrates Grown by Metal–Organic Chemical Vapor Deposition
DOI: https://doi.org/10.1002/pssb.202400029
[2024] AlN/AlGaN heterojunction field-effect transistors with a high-AlN-mole-fraction Al0.72Ga0.28N channel grown on single-crystal AlN substrate by metalorganic chemical vapor deposition
DOI: https://doi.org/10.35848/1347-4065/ad85ed
[2024] Improved performance of InGaN/GaN multiple-quantum-wells photovoltaic devices on free-standing GaN substrates with TMAH treatment
DOI: https://doi.org/10.1016/j.solmat.2024.113025

続きを表示（残り 54 件）

[2024] Oxidative Rearrangement Approach for the Ring Contraction of N−H Piperidines to Pyrrolidines
DOI: https://doi.org/10.1002/adsc.202400484
[2024] Current collapse suppression in AlGaInN/GaN HEMTs with thin unintentionally doped GaN channel and AlN back barrier grown on single-crystal AlN substrate
DOI: https://doi.org/10.1063/5.0187043
[2024] InGaN photovoltaic cells for applications in laser power beaming
DOI: https://doi.org/10.1117/12.3001576
[2024] Characterization of dislocations induced by Vickers indentation in GaN for explaining size ratios of dislocation patterns
DOI: https://doi.org/10.1007/s10853-024-09392-z
[2024] Over 43%-power-efficiency GaInN-based photoelectric transducer on free-standing GaN substrate for optical wireless power transmission system
DOI: https://doi.org/10.1088/1361-6641/ad2d62
[2024] Dietary Intervention for Control of Clinical Symptom in Patients with Systemic Metal Allergy: A Single Center Randomized Controlled Clinical Study.
DOI: https://doi.org/10.24546/0100486230
[2024] Sub-bandgap optical absorption processes in 300-nm-thick Al1−xInxN alloys grown on a c-plane GaN/sapphire template
DOI: https://doi.org/10.1063/5.0181231
[2023] Proper Motion of Sagittarius A* with Atacama Large Millimeter/Submillimeter Array
DOI: https://doi.org/10.46620/ursigass.2023.0481.akvy4308
[2023] DC and Pulse I–V Characteristics of Strain‐Engineered AlGaInN/GaN HEMTs fabricated on Single‐Crystal AlN Substrate
DOI: https://doi.org/10.1002/pssa.202200733
[2023] Soleus muscle contains a higher concentration of lipid metabolites than extensor digitorum longus in rats with lipopolysaccharide-induced acute muscle atrophy
DOI: https://doi.org/10.1016/j.clnesp.2023.06.011
[2023] Current-driven degradation dynamics in GaN/InGaN multi-quantum-wells UV photodetectors fabricated with a high-quality Al2O3 passivation film
DOI: https://doi.org/10.1016/j.vacuum.2023.112159
[2023] Exosomes in ascites from patients with human pancreatic cancer enhance remote metastasis partially through endothelial-mesenchymal transition
DOI: https://doi.org/10.1016/j.pan.2023.04.002
[2023] Icing after skeletal muscle injury with necrosis in a small fraction of myofibers limits inducible nitric oxide synthase-expressing macrophage invasion and facilitates muscle regeneration
DOI: https://doi.org/10.1152/ajpregu.00258.2022
[2023] Simulation analyses of carrier dynamics in npn-type GaN-heterojunction bipolar transistors with different hole-concentration p-base layers
DOI: https://doi.org/10.1116/6.0002577
[2023] DC and Pulse I–V Characteristics of Strain‐Engineered AlGaInN/GaN HEMTs fabricated on Single‐Crystal AlN Substrate
DOI: https://doi.org/10.1002/pssa.202370035
[2023] Improved reverse-bias breakdown behavior in fully-vertical GaN-on-Si Schottky barrier diodes with a thin AlN layer within the GaN drift layer
DOI: https://doi.org/10.1088/1361-6641/aceaa2
[2022] Pancreatic cancer cell-derived exosomes induce epithelial-mesenchymal transition in human pancreatic cancer cells themselves partially via transforming growth factor β1
DOI: https://doi.org/10.1007/s00795-022-00321-0
[2022] Growth and Microstructure Analyses of Semipolar AlInN Epitaxial Layers on a Fully Relaxed Semipolar {112¯2} GaInN/GaN/m‐plane Sapphire Template
DOI: https://doi.org/10.1002/pssb.202200492
[2022] High-temperature characteristics of GaN/InGaN multiple-quantum-well UV photodetectors fabricated on sapphire substrate: Analysis of photovoltaic and carrier transit time properties
DOI: https://doi.org/10.1116/6.0002101
[2022] Room-temperature nonradiative recombination lifetimes in c-plane Al1−xInxN epilayers nearly and modestly lattice-matched to GaN (0.11 ≤ x ≤ 0.21)
DOI: https://doi.org/10.1063/5.0106540
[2022] Current-induced degradation behaviors of InGaN/GaN multiple quantum well UV photodetectors: Role of electrically active defects
DOI: https://doi.org/10.1016/j.sna.2022.113935
[2022] Icing after skeletal muscle injury decreases M1 macrophage accumulation and TNF-α expression during the early phase of muscle regeneration in rats
DOI: https://doi.org/10.1007/s00418-022-02143-8
[2022] Simulation analyses of carrier dynamics in npn-type GaN-HBTs with different-hole-concentration p-base layers
DOI: https://doi.org/10.1109/csw55288.2022.9930408
[2022] The role of p-GaN layer thickness for the evaluation of high-performance and ultrafast GaInN/GaN multiple quantum wells UV photodetectors
DOI: https://doi.org/10.1016/j.optmat.2022.112284
[2022] High drain-current-density and high breakdown-field Al0.36Ga0.64N-channel heterojunction field-effect transistors with a dual AlN/AlGaInN barrier layer
DOI: https://doi.org/10.35848/1347-4065/ac4b09
[2021] Cytoreductive Nephrectomy After Combination of Nivolumab Plus Ipilimumab for Mucinous Tubular and Spindle Cell Carcinoma of the Kidney With Bone Metastases: A Case Report
DOI: https://doi.org/10.21873/invivo.12732
[2021] Synbiotics Improved Stool Form via Changes in the Microbiota and Short-Chain Fatty Acids in Hemodialysis Patients.
DOI: https://doi.org/10.24546/81013032
[2021] Simulation Study on Novel GaN‐Based n−p−n Heterojunction Bipolar Transistors with a Quaternary AlGaInN Emitter and a Two‐Dimensionally Conductive Base
DOI: https://doi.org/10.1002/pssa.202100397
[2021] Improved field-effect mobility in transfer-free graphene films synthesized via the metal agglomeration technique using high-crystallinity Ni catalyst films
DOI: https://doi.org/10.35848/1882-0786/ac30ed
[2021] High-breakdown-voltage Al0.36Ga0.64N-channel HFETs with a dual AlN/AlGaInN barrier layer and selective-area regrowth ohmic contacts
DOI: https://doi.org/10.7567/ssdm.2021.d-7-08
[2021] Evaluation of GaInN-based photovoltaic cells under monochromatic light illumination toward the application to the optical wireless power transmission system
DOI: https://doi.org/10.7567/ssdm.2021.f-4-02
[2021] Improved epilayer qualities and electrical characteristics for GaInN multiple-quantum-well photovoltaic cells and their operation under artificial sunlight and monochromatic light illuminations
DOI: https://doi.org/10.1063/5.0062346
[2021] Reduced nonradiative recombination rates in c-plane Al0.83In0.17N films grown on a nearly lattice-matched GaN substrate by metalorganic vapor phase epitaxy
DOI: https://doi.org/10.1063/5.0066263
[2021] Evaluation of high-performance, self-powered and wavelength-selective InGaN/GaN multiple quantum well UV photodetectors fabricated on sapphire substrate: Analysis of the influence of growth temperature
DOI: https://doi.org/10.1016/j.sna.2021.113050
[2021] Preventive effect of docosahexaenoic acid (DHA) and eicosapentaenoic acid (EPA) against endotoxin-induced muscle atrophy
DOI: https://doi.org/10.1016/j.clnesp.2021.07.017
[2021] Bias-controlled photocurrent generation process in GaN-based ultraviolet p–i–n photodetectors fabricated with a thick Al2O3 passivation layer
DOI: https://doi.org/10.1016/j.ijleo.2021.167691
[2021] Near-bandgap optical properties of Al 1− x In x N thin films grown on a c -plane freestanding GaN substrate
DOI: https://doi.org/10.35848/1347-4065/ac148a
[2021] Fabrication and characterization of AlGaInN/Al 0.36 Ga 0.64 N HFETs with selective-area regrowth ohmic contacts and AlN barriers.
[2021] Temperature dependence on reflectivity spectra of AlInN/GaN DBRs
[2021] Evaluation of GaInN besed photovoltaic cells under monochromatic light illumination for optical wireless power transmission system
[2021] Understanding the degradation mechanisms of InGaN/GaN multiple quantum well UV photodetectors submitted to different current stresses
DOI: https://doi.org/10.1364/ol.434920
[2021] Improved on-state performance in AlGaN-channel heterojunction field-effect transistors with a quaternary AlGaInN barrier layer and a selectively grown n++-GaN contact layer
DOI: https://doi.org/10.1016/j.mssp.2021.105960
[2021] Demonstration of polarization-induced hole conduction in composition-graded AlInN layers grown by metalorganic chemical vapor deposition
DOI: https://doi.org/10.1063/5.0048751
[2021] Non-Directed β- or γ-C(sp3)–H Functionalization of Saturated Nitrogen-Containing Heterocycles
DOI: https://doi.org/10.1055/a-1483-4575
[2021] Icing after eccentric contraction-induced muscle damage perturbs the disappearance of necrotic muscle fibers and phenotypic dynamics of macrophages in mice
DOI: https://doi.org/10.1152/japplphysiol.01069.2020
[2021] Growth of 300-nm-thick epitaxial AlInN films on a semi-relaxed c-plane GaInN template by metalorganic chemical vapor deposition
DOI: https://doi.org/10.1088/2053-1591/abe250
[2021] Ring contraction of 2,2-disubstituted cyclic amines using hypervalent iodine(III)
[2021] Effect of crystal quality of Ni metal catalyst on crystal quality of transfer-free graphene II
[2021] Study on polarization-induced hole conduction for epitaxial AlInN films
[2021] Fabrication and characterization of AlGaN channel HFETs with selective-area regrowth ohmic contacts
[2021] Growth and characterization of Al 0.4 Ga 0.6 N channel 2DEG heterostructures with quaternary AlGaInN barrier layers
[2021] Simulation Study on a GaN-npn HBT with a AlGaInN Emitter Layer and a Quantum Well Base layer
[2021] Luminescence studies of nearly lattice-matched c -plane AlInN/GaN heterostructures
[2021] Impact of current-induced degradation process on the electro-optical characteristics of InGaN/GaN multiple-quantum-well photodetectors fabricated on sapphire substrate
DOI: https://doi.org/10.1063/5.0027127

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AI 要約（直近 5 年の研究成果）

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研究成果（64 件）

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