Masahiro Horita 研究室

主宰者：Masahiro Horita

名古屋大学・Nagoya University Hospital

AI 要約（直近 5 年の研究成果）

Horita研究室では、次世代のパワーデバイスとして期待される窒化ガリウム（GaN）と炭化ケイ素（SiC）といった広禁制帯幅半導体の性能向上を目指して研究を展開しています。これらの材料を用いた電界効果トランジスタやダイオードなどのデバイスに現れる電気的な不安定性や特性劣化の原因を、微視的なレベルで解明することが主要な研究課題です。具体的には、デバイスの内部に形成される酸化物と半導体の界面や金属電極との境界領域に存在する欠陥やトラップを、電気測定やスペクトロスコピーなどの手法を用いて調査しています。特に、マグネシウムイオンを注入して作製されたp型領域の活性化、界面に蓄積される電子やホールの挙動、そしてこれらがキャリア移動度に及ぼす影響を定量的に評価することに注力しています。さらに、粒子線照射による欠陥生成メカニズムや、熱処理による欠陥の変化についても詳細に分析しており、デバイスの信頼性向上と高性能化に向けた材料・プロセス設計の知見を提供しています。

※ AI（Claude）が、公開されている論文要旨から研究の問い・手法・主要な発見を事実情報として抽出・再構成して自動生成しています。誤りを含む可能性があるため、正確性は研究室公式情報でご確認ください。

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研究成果（51 件）

[2026] Electrical activity of Mg clustering at nanoscale defects induced by N ion implantation in GaN
DOI: https://doi.org/10.1063/5.0335166
[2026] Electrical activity of Mg clustering at nanoscale defects induced by N ion implantation in GaN
DOI: https://doi.org/10.48505/nims.6368
[2026] Hole trapping and emission behavior near the valence band edge at an AlSiO/ p -type GaN interface revealed by repeated temperature-dependent C – V measurements
DOI: https://doi.org/10.1063/5.0325306
[2026] Investigation of Coulomb scattering centers using a substrate bias effect in n -channel metal–oxide–semiconductor field-effect transistors with AlSiO/AlN/ p -type GaN gate structures
DOI: https://doi.org/10.1063/5.0324229
[2025] Avalanche durability of high-voltage GaN p – n diodes with tunnel junctions as anode contacts
DOI: https://doi.org/10.1063/5.0300544
[2025] Vacancy‐Type Defects in n‐Type GaN Fabricated by Low‐Dose Ion Implantation Studied by a Monoenergetic Positron Beam
DOI: https://doi.org/10.1002/pssb.202500409
[2025] Impact of Implanted Ion Species on Excess Donors Introduced in n-type GaN Epitaxial Layers
DOI: https://doi.org/10.7567/ssdm.2025.m-4-01
[2025] Ultra-high-pressure annealing with a carbon capping layer as an activation method for Mg-ion-implanted GaN
DOI: https://doi.org/10.35848/1882-0786/ae0866
[2025] Estimation of net acceptor activation ratio of channeled-implanted Mg from breakdown voltage analysis of vertical GaN p–n junction diodes with junction termination extension
DOI: https://doi.org/10.35848/1347-4065/ade753
[2025] Vertical GaN Junction Barrier Schottky Diodes Fabricated by Using Channeled Implantation of Mg Ions and Ultrahigh-Pressure Annealing
DOI: https://doi.org/10.1109/ted.2025.3579442

続きを表示（残り 41 件）

[2025] High Mg activation with suppressed Mg diffusion during ultra-high-pressure annealing via sequential nitrogen-ion implantation in Mg-ion-implanted GaN
DOI: https://doi.org/10.35848/1882-0786/ade3ac
[2025] Analysis of Acceptor Activation and Lateral Diffusion of Channeled-Implanted Mg Atoms in Vertical GaN Junction Barrier Schottky Diodes
DOI: https://doi.org/10.23919/ispsd62843.2025.11117439
[2025] Depth Analyses of Acceptor and Compensating Donor Concentrations in Mg‐Ion‐Implanted GaN with Ultra‐High‐Pressure Annealing
DOI: https://doi.org/10.1002/pssb.202400613
[2024] Free electron mobility limited by fixed charges and trapped electrons in 4H-SiC(11 <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"> <mml:mover> <mml:mn>2</mml:mn> <mml:mo>¯</mml:mo> </mml:mover> </mml:math> 0) and (1 <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"> <mml:mover> <mml:mn>1</mml:mn> <mml:mo>¯</mml:mo> </mml:mover> </mml:math> 00) MOSFETs annealed in NO
DOI: https://doi.org/10.35848/1347-4065/ada1b7
[2024] A distinctive bound exciton line induced by electron-beam irradiation and subsequent annealing of an unintentionally doped GaN layer
DOI: https://doi.org/10.35848/1347-4065/ad918a
[2024] Engineered interface charges and traps in GaN MOSFETs providing high channel mobility and E-mode operation
DOI: https://doi.org/10.35848/1347-4065/ad8c4f
[2024] Impact of Coulomb scattering due to trapped electrons on Hall mobilities in 4H-SiC(11 <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"> <mml:mover> <mml:mn>2</mml:mn> <mml:mo>¯</mml:mo> </mml:mover> </mml:math> 0) and (1 <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"> <mml:mover> <mml:mn>1</mml:mn> <mml:mo>¯</mml:mo> </mml:mover> </mml:math> 00) MOSFETs annealed in NO
DOI: https://doi.org/10.35848/1347-4065/ad879d
[2024] Engineering of Channel Mobility and Threshold Voltage in AlSiO/AlN/p-type GaN Metal–Oxide–Semiconductor Field-Effect Transistors
DOI: https://doi.org/10.7567/ssdm.2024.d-7-01
[2024] Influence of fixed charges and trapped electrons on free electron mobility at 4H-SiC(0001)/SiO2 interfaces with gate oxides annealed in NO or POCl3
DOI: https://doi.org/10.35848/1882-0786/ad63ef
[2024] Transport Properties in GaN Metal–Oxide–Semiconductor Field‐Effect Transistor Almost Free of Interface Traps with AlSiO/AlN/p‐Type GaN Gate Stack
DOI: https://doi.org/10.1002/pssr.202400141
[2023] Nitrogen-displacement-related recombination centers generated by electron beam irradiation in n-type and p-type homoepitaxial GaN layers
DOI: https://doi.org/10.35848/1882-0786/ad16ad
[2023] Polarization Engineering in AlSiO/p-type GaN MOSFETs Using AIN Interlayers Formed by Plasma-Enhanced Atomic Layer Deposition
DOI: https://doi.org/10.1109/iedm45741.2023.10413714
[2023] High Hall electron mobility in the inversion layer of 4H-SiC (0001)/SiO2 interfaces annealed in POCl3
DOI: https://doi.org/10.35848/1882-0786/ace150
[2023] Development of p-type Ion Implantation Technique for Realization of GaN Vertical MOSFETs
DOI: https://doi.org/10.23919/iwjt59028.2023.10175173
[2023] Correlation between non-ionizing energy loss and production rate of electron trap at EC − (0.12–0.20) eV formed in gallium nitride by various types of radiation
DOI: https://doi.org/10.1063/5.0128709
[2022] Depth profiling of E C – 0.26 eV electron traps introduced in homoepitaxial n-type GaN by ultra-low-dose Si-ion implantation and subsequent annealing
DOI: https://doi.org/10.35848/1882-0786/aca45d
[2022] Process engineering of GaN power devices via selective-area p-type doping with ion implantation and ultra-high-pressure annealing
DOI: https://doi.org/10.1063/5.0107921
[2022] Improvement of Channel Mobility in AlSiO/GaN MOSFETs using Thin Interfacial Layers to Reduce Border Traps
DOI: https://doi.org/10.7567/ssdm.2022.j-6-01
[2022] Effective channel mobility in phosphorus-treated 4H-SiC (0001) metal-oxide-semiconductor field-effect transistors with various p-body doping concentrations
DOI: https://doi.org/10.35848/1347-4065/ac87e4
[2022] Increase in net donor concentration due to introduction of donor-like defects by ultra-low-dose Si-ion implantation and subsequent annealing in homoepitaxial n-type GaN
DOI: https://doi.org/10.35848/1882-0786/ac7433
[2022] Hole traps related to nitrogen displacement in p-type GaN grown by metalorganic vapor phase epitaxy on freestanding GaN
DOI: https://doi.org/10.1063/5.0086535
[2022] SiO 2 /GaN interfaces with low defect densities and high breakdown electric fields formed by plasma-enhanced atomic layer deposition
DOI: https://doi.org/10.35848/1347-4065/ac4f79
[2021] Effect of annealing time and pressure on electrical activation and surface morphology of Mg-implanted GaN annealed at 1300 °C in ultra-high-pressure nitrogen ambient
DOI: https://doi.org/10.35848/1882-0786/ac39b0
[2021] Breakdown Electric Field of GaN p+-n and p-n+Junction Diodes With Various Doping Concentrations
DOI: https://doi.org/10.1109/led.2021.3125328
[2021] Effect of Schottky barrier height on quantitative analysis of deep-levels in n-type GaN by deep-level transient spectroscopy
DOI: https://doi.org/10.1063/5.0073747
[2021] Effects of the sequential implantation of Mg and N ions into GaN for p-type doping
DOI: https://doi.org/10.35848/1882-0786/ac2ae7
[2021] Depth profiles of electron traps generated during reactive ion etching in n-type 4H-SiC characterized by using isothermal capacitance transient spectroscopy
DOI: https://doi.org/10.1063/5.0059588
[2021] SiO2/n-GaN MOS structures with low interface state density formed by plasma-enhanced atomic layer deposition method
DOI: https://doi.org/10.7567/ssdm.2021.d-7-06
[2021] Photoionization cross section ratio of nitrogen-site carbon in GaN under sub-bandgap-light irradiation determined by isothermal capacitance transient spectroscopy
DOI: https://doi.org/10.35848/1882-0786/ac16ba
[2021] Nitrogen-displacement-related hole traps in homoepitaxial p-type GaN
[2021] Impact ionization coefficients and critical electric field in GaN
DOI: https://doi.org/10.1063/5.0050793
[2021] Isochronal annealing study of Mg-implanted p-type GaN activated by ultra-high-pressure annealing
DOI: https://doi.org/10.35848/1882-0786/abf4f3
[2021] Analysis of channel mobility in GaN-based metal-oxide-semiconductor field-effect transistors
DOI: https://doi.org/10.1063/5.0040700
[2021] Reduction of ultra-high-pressure annealing temperature for Mg-ion-implanted GaN
[2021] Temperature dependence of impact ionization coefficients of electrons and holes in GaN
[2021] Electron traps formed by oxygen ion implantation in n-type GaN
[2021] Analysis of mobility limitation factors in AlSiO/p-type GaN-based MOSFETs
[2021] Impact of Schottky barrier height on the detection of deep-levels in n-type GaN by deep-level transient spectroscopy
[2021] Diffusion of Mg and H atoms in Mg-implanted GaN by ultra-high-pressure annealing
[2021] Body bias dependence of the effective channel mobility in SiC MOSFETs with phosphorus treatment
[2021] Nitrogen-displacement-related electron traps in n-type GaN grown on a GaN freestanding substrate
DOI: https://doi.org/10.1063/5.0035235

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AI 要約（直近 5 年の研究成果）

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研究成果（51 件）

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