Shin-Ichiro Kuroki 研究室（広島大学）

AI 要約（直近 5 年の研究成果）

本研究室は、炭化ケイ素（SiC）という特殊な半導体材料を用いた電子デバイスの開発と、その高温・放射線環境での信頼性に関する研究を進めています。SiCは従来のシリコンよりも耐熱性に優れ、極端な環境条件での動作が可能であるため、原子力施設の廃炉作業や宇宙開発など、厳しい条件での使用を想定した応用に適しています。研究室では、SiCを材料とした様々なトランジスタやメモリ、画像センサといった集積回路の設計・製造に取り組んでいます。これらのデバイスの実現には、材料層間の接合部分や絶縁膜の安定性確保が重要です。本研究室では、金属とSiC間の接触特性、酸化膜の形成方法、そして放射線や高温による劣化メカニズムを詳細に調べています。特に400～500℃といった高温環境での動作確認や、大線量ガンマ線照射後の性能維持について、実験的に検証を行っています。こうした基礎研究から得られた知見は、デバイスの信頼性向上に直結し、将来の過酷環境エレクトロニクスの実用化へと導いています。

※ AI（Claude）が、公開されている論文要旨から研究の問い・手法・主要な発見を事実情報として抽出・再構成して自動生成しています。誤りを含む可能性があるため、正確性は研究室公式情報でご確認ください。

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研究成果（33 件）

[2025] Fabrication of the Planar SiC Gate-all-Around JFET with Channel Dose Modulation
DOI: https://doi.org/10.4028/p-xm5gzm
[2025] Thermal Stability of Gate Driver Circuits Based on 4H-SiC MOSFETs at 300°C for High-Power Applications
DOI: https://doi.org/10.1109/jeds.2025.3546959
[2025] High-temperature reliability of Ni/Ti/Nb ohmic contact on p-type 4H-SiC
DOI: https://doi.org/10.35848/1347-4065/adcfe2
[2024] Impact of interface oxide type on the gamma radiation response of SiC TTL ICs
DOI: https://doi.org/10.2298/fuee2404599m
[2024] Thermal stability of TiN gate electrode for 4H-SiC MOSFETs and integrated circuits
DOI: https://doi.org/10.35848/1347-4065/ad665b
[2024] 4H-SiC Radiation Hardened Static Random Access Memory
DOI: https://doi.org/10.1109/led.2024.3466612
[2024] 4H-SiC 64 pixels CMOS image sensors with 3T/4T-APS arrays
DOI: https://doi.org/10.35848/1882-0786/ad665f
[2023] Influence of Gate Depletion Layer Width on Radiation Resistance of Silicon Carbide Junction Field-Effect Transistors
DOI: https://doi.org/10.3390/qubs7040031
[2023] Integrated Fabrication Process of Si Microcantilever Using TMAH Solution With Planar Molybdenum Mask
DOI: https://doi.org/10.1109/jmems.2023.3263530
[2023] Nanowire single-crystal grain and single grain boundary silicon field effect transistors for direct electrical characterization of grain boundaries
DOI: https://doi.org/10.35848/1882-0786/acb6ec

続きを表示（残り 23 件）

[2023] Flexible and compact perspiration-monitoring system with 0.18 <i>μ</i>m BCD process and PDMS micro air-flow path
DOI: https://doi.org/10.35848/1347-4065/acb659
[2023] Study of interface-trap and near-interface-state distribution in a 4H-SiC MOS capacitor with the full-distributed circuit model
DOI: https://doi.org/10.35848/1347-4065/ad169b
[2022] Threshold voltage instability and hysteresis in gamma-rays irradiated 4H-SiC junction field effect transistors
DOI: https://doi.org/10.1063/5.0095841
[2022] Observation of Metal-free Phthalocyanine Adsorbed on SiC Reconstructed Surface
DOI: https://doi.org/10.1380/ejssnt.2022-040
[2022] Integrated 4H-SiC Photosensors With Active Pixel Sensor-Type Circuits for MGy-Class Radiation Hardened CMOS UV Image Sensor
DOI: https://doi.org/10.1109/led.2022.3226494
[2022] A High-Precision Wearable Perspiration Monitor with 0.18 undefinedm BCD Process and PDMS Micro Air-Flow Path
DOI: https://doi.org/10.7567/ssdm.2022.k-2-03
[2022] Hybrid Pixels With Si Photodiode and 4H-SiC MOSFETs Using Direct Heterogeneous Bonding Toward Radiation Hardened CMOS Image Sensors
DOI: https://doi.org/10.1109/led.2022.3200124
[2022] Amplifier Based on 4H-SiC MOSFET Operation at 500 °C for Harsh Environment Applications
DOI: https://doi.org/10.1109/ted.2022.3184663
[2022] Growth of vanadium doped semi-insulating 4H-SiC epilayer with ultrahigh-resistivity
DOI: https://doi.org/10.1063/5.0095457
[2022] Characterization of Continuous-Wave Laser Crystallized Silicon Thin Films with Hole-Patterns
DOI: https://doi.org/10.1149/2162-8777/ac689b
[2021] Improve High-Temperature Reliability at 500℃ of Ni/Nb/4H-SiC Ohmic Contact with CF 4 :O 2 Surface Treatment
[2021] Controlled Release of Microcantilever from a Silicon-on-Insulator Wafer with Oxide Brace
DOI: https://doi.org/10.1109/icramet53537.2021.9650507
[2021] Output characteristics of SOI-Si/4H-SiC hybrid pixel devices for radiation hardened CMOS image sensors
[2021] 500 °C high-temperature reliability of Ni/Nb ohmic contact on n-type 4H-SiC
DOI: https://doi.org/10.35848/1347-4065/ac4391
[2021] High-Selective Deep RIE of 4H-SiC with SiO 2 Hard Mask in Cl 2 /HBr/O 2 Plasma Chemistry
[2021] Study of Si-SOI/SiO 2 /4H-SiC direct wafer bonding
[2021] High-Temperature Operation of Differential Amplifier Based on 4H-SiC MOSFETs for Harsh Environment Applications
[2021] Influence of impurities on semi-insulating characteristics of V doped 4H-SiC epi layers
[2021] Study on PD Structures of SOI-Si/4H-SiC Hybrid Image Sensors
[2021] Development of Radiation Resistant Silicon Carbide Semiconductor Devices
[2021] Operating Characteristics of Full 4H-SiC Pixel Device under UV-Light Irradiation
[2021] High-Temperature Reliability at 400℃ of Integrated Electronic Circuit Based on 4H-SiC MOSFET with TiN Metal Gate
[2021] Roughness Reduction Processing of 4H-SiC 3D structure formed by Dry Etching Process

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AI 要約（直近 5 年の研究成果）

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研究成果（33 件）

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