Kenji Shiraishi 研究室

主宰者：Kenji Shiraishi

名古屋大学・Nagoya University Hospital

AI 要約（直近 5 年の研究成果）

白石健二研究室は、半導体材料やデバイスの性能を向上させるための原子・電子構造を理論計算と実験により解明する研究を展開しています。特に、次世代メモリデバイスやパワーデバイスの実用化に向けて、材料内部の微視的な欠陥や界面構造がデバイス特性に与える影響を調べています。例えば、フラッシュメモリに用いられる窒化珪素の組成最適化、ガリウム窒化物と酸化膜の界面構造、シリコンカーバイドの酸化過程など、様々な材料系について研究を行っています。研究手法としては、第一原理計算（密度汎関数理論）を主軸としながら、原子分解能の電子顕微鏡観察と組み合わせて材料の構造を解析しています。これにより、原子スケールでの欠陥形成メカニズムや化学反応プロセスを明らかにしています。また、半導体製造プロセスに関連する気相反応の熱力学や反応速度も理論計算により検討しており、実際のプロセス条件との比較を通じてプロセス設計の指針を得ています。これらの研究を通じて、欠陥や不純物がデバイス性能をどのように支配するかを原子レベルで理解し、材料設計やプロセス条件の最適化に関する実用的な知見を提供しています。

※ AI（Claude）が、公開されている論文要旨から研究の問い・手法・主要な発見を事実情報として抽出・再構成して自動生成しています。誤りを含む可能性があるため、正確性は研究室公式情報でご確認ください。

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研究成果（65 件）

[2025] First-principles Study of Interstitial-Related Defects in Quartz
DOI: https://doi.org/10.7566/jpsj.94.074707
[2025] Successful Minimally Invasive Treatment of Tracheal Perforation With Tension Pneumomediastinum and Pneumothoraces in an Intubated Patient
DOI: https://doi.org/10.1164/ajrccm.2025.211.abstracts.a1185
[2025] Successful Talc Pleurodesis for Persistent Bronchopleural Fistula in Secondary Spontaneous Pneumothorax Following Failed Endobronchial Valve Insertion
DOI: https://doi.org/10.1164/ajrccm.2025.211.abstracts.a6277
[2025] Optimizing SiN Composition for Enhanced Charge-Trapping in Next-Generation 3D NAND Flash Memories
DOI: https://doi.org/10.1109/edtm61175.2025.11040340
[2025] Seasonal Challenges for a Zero-Carbon Grid in California
DOI: https://doi.org/10.17615/h79a-k026
[2025] Misfit accommodation in a single interface atomic layer at a highly lattice-mismatched InN/GaN
DOI: https://doi.org/10.1063/5.0231584
[2025] Silicon-Richness Impact for Enhanced Charge-Trapping in 3D NAND Flash Memories
DOI: https://doi.org/10.1109/jeds.2025.3638173
[2025] Orientation Dependence of Structural Stability and Band Alignment for N-incorporated 4H-SiC/SiO2 Interfaces: A DFT-Based Approach
DOI: https://doi.org/10.7567/ssdm.2025.ps-04-07
[2025] Structure of the very first atomic layer of Ga oxide on GaN at GaN oxidation front
DOI: https://doi.org/10.1063/5.0274521
[2025] Atomic and electronic structures of point defects related to vacancy-mediated mechanism of Mg diffusion in GaN
DOI: https://doi.org/10.35848/1347-4065/ae2174

続きを表示（残り 55 件）

[2025] Space-induced floating electronic states in non-stoichiometric amorphous silicon nitride for memory devices applications
DOI: https://doi.org/10.1103/mc16-76ck
[2025] First-principles investigation of phase transition from zincblende to L10 at high temperature in Si0.5Sn0.5 alloys
DOI: https://doi.org/10.35848/1347-4065/ada7b2
[2025] Atomic Scale Insights into Si Transport Pathway in Si-oxide Film Based on Theoretical Investigation of Medium Density Effects
DOI: https://doi.org/10.1380/ejssnt.2025-043
[2025] Boron as a passivating dopant of oxygen-vacancy-induced hole traps at GaN/SiO2 interface
DOI: https://doi.org/10.35848/1882-0786/adece5
[2024] Passivation mechanisms of oxygen-vacancy-induced hole traps by Mg acceptor atoms at GaN/SiO2 interface
DOI: https://doi.org/10.1063/5.0223569
[2024] Theoretical study of the influence of GaOx interfacial layer on the GaN/SiO2 interface property
DOI: https://doi.org/10.1063/5.0204285
[2024] First-principles study on barrier height of silicon emission from interface into oxide during silicon thermal oxidation
DOI: https://doi.org/10.35848/1347-4065/ad2bb9
[2024] Reaction of NO molecule at 4H-SiC/SiO2 interface and its orientation dependence: a first-principles study
DOI: https://doi.org/10.35848/1347-4065/ad29eb
[2024] Microscopic mechanisms of nitrogen doping in silicon carbide during epitaxial growth
DOI: https://doi.org/10.35848/1882-0786/ad524c
[2024] Durable Response of Pembrolizumab for EGFR Mutation-positive Lung Adenocarcinoma with Early Progression to Osimertinib in First-line Treatment
DOI: https://doi.org/10.2169/internalmedicine.3784-24
[2024] Theoretical investigation of NH3 nitridation on Cl-terminated Si(100)-2 × 1 surfaces
DOI: https://doi.org/10.1016/j.susc.2024.122655
[2024] Impact of grain size on the performance of WSe2 FETs revealed by first-principles calculations
DOI: https://doi.org/10.35848/1347-4065/ad88c2
[2024] First-principles study of recombination-enhanced migration of an interstitial magnesium in gallium nitride
DOI: https://doi.org/10.1103/physrevb.110.l081201
[2023] Theoretical Study of Nitrogen Incorporation at the Steps on SiC(0001) Surface during CVD Growth
DOI: https://doi.org/10.7567/ssdm.2023.m-1-03
[2023] First-principles study for orientation dependence of band alignments at the 4H-SiC/SiO2 interface
DOI: https://doi.org/10.35848/1347-4065/ad1897
[2023] Theoretical study of the gas-phase reaction of hexachlorodisilane by thermodynamic analysis and kinetics calculation
DOI: https://doi.org/10.35848/1347-4065/ad0fa0
[2023] Theoretical Study of the Gas-Phase Reaction of Hexachlorodisilane by Thermodynamic Analysis and Kinetics Calculation
DOI: https://doi.org/10.7567/ssdm.2023.m-7-01
[2023] First Principles Studies on Mg Impurity Incorporation into GaN during MOVPE Growth
DOI: https://doi.org/10.7567/ssdm.2023.ps-11-11
[2023] First-Principles Study for Orientation Dependence of Band Alignments at 4H-SiC/SiO2 Interface
DOI: https://doi.org/10.7567/ssdm.2023.ps-4-05
[2023] Atomic and Electronic Structures of Basal Plane Dislocations (BPDs) in 4H-SiC -Atomistic Origin of Bipolar Degradation of SiC Devices-
DOI: https://doi.org/10.7567/ssdm.2023.n-2-05
[2023] First-principles study on silicon emission from interface into oxide during silicon thermal oxidation
DOI: https://doi.org/10.1016/j.mssp.2023.107527
[2023] Elucidation of Spin-Correlations, Fermi Surface and Pseudogap in a Copper Oxide Superconductor
DOI: https://doi.org/10.3390/condmat8020033
[2023] Comparative study of the gas phase reaction of SiCl4, SiHCl3, SiH2Cl2, and SiH3Cl by thermodynamic analysis
DOI: https://doi.org/10.35848/1347-4065/acc3e8
[2023] Effect of MgO Grain Boundaries on the Interfacial Perpendicular Magnetic Anisotropy in Spin-Transfer Torque Magnetic Random Access Memory: A First-Principles Study
DOI: https://doi.org/10.1109/tmag.2023.3248488
[2023] Atomic and electronic structures of interfaces between amorphous (Al2O3)1−x(SiO2)x and GaN polar surfaces revealed by first-principles simulated annealing technique
DOI: https://doi.org/10.1063/5.0132033
[2023] Effect of hydrogen atoms on potassium-ion electrets used in vibration-powered generators
DOI: https://doi.org/10.1016/j.mssp.2022.107306
[2022] Improvement of the reliability of potassium-ion electrets thorough an additional oxidation process
DOI: https://doi.org/10.1063/5.0129247
[2022] Effect of interfacial nitrogen defects on tunnel magnetoresistance in an Fe/MgO/Fe magnetic tunnel junction
DOI: https://doi.org/10.1063/5.0126570
[2022] Microscopic Physical Origin of Charge Traps in 3D NAND Flash Memories
DOI: https://doi.org/10.7567/ssdm.2022.f-5-04
[2022] Theoretical Study of the Influence of GaOx Layer on the SiO2/GaN Interface
DOI: https://doi.org/10.7567/ssdm.2022.j-6-09
[2022] Impact of Grain Boundaries in MgO Layer on Data Retention Performance of STT-MRAM
DOI: https://doi.org/10.7567/ssdm.2022.c-10-05
[2022] Insight into the step flow growth of gallium nitride based on density functional theory
DOI: https://doi.org/10.1016/j.apsusc.2022.155840
[2022] Atomic and electronic structures of nitrogen vacancies in silicon nitride: Emergence of floating gap states
DOI: https://doi.org/10.1103/physrevb.106.155201
[2022] Microscopic identification of stepped SiC(0001) and the reaction site of hydrogen-rich epitaxial growth
DOI: https://doi.org/10.1103/physrevb.106.035309
[2022] An atomistic insight into reactions and free-energy profiles of NH3 and Ga on GaN surfaces during the epitaxial growth
DOI: https://doi.org/10.1016/j.apsusc.2022.153935
[2022] Effect of carbon atoms on the reliability of potassium-ion electrets used in vibration-powered generators
DOI: https://doi.org/10.35848/1347-4065/ac6a3f
[2022] Beyond ab initio reaction simulator: An application to GaN metalorganic vapor phase epitaxy
DOI: https://doi.org/10.1063/5.0119783
[2022] Reaction of nitrous oxide and ammonia molecules at 4H-SiC/SiO<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" altimg="si1.svg"><mml:msub><mml:mrow/><mml:mn>2</mml:mn></mml:msub></mml:math> interface: An ab initio study
DOI: https://doi.org/10.1016/j.susc.2022.122102
[2022] Ab initio study for orientation dependence of nitrogen incorporation at 4H-SiC/SiO 2 interfaces
DOI: https://doi.org/10.35848/1347-4065/ac5a96
[2022] Microscopic physical origin of charge traps in 3D NAND flash memories
DOI: https://doi.org/10.35848/1347-4065/acaeb3
[2021] First-principles calculation study on the atomic and electronic structures at the (Al 2 O 3 ) 1- x (SiO 2 ) x /GaN interfaces.
[2021] Study of Adsorption of H on Stepped SiC Surface during CVD using HCl
[2021] Reaction mechanisms at 4H-SiC/SiO 2 interface by the coexistence of dry and wet oxidants
[2021] Reaction of NO molecule at 4H-SiC/SiO 2 interface: an ab initio study for the effect of NO annealing after dry oxidation
DOI: https://doi.org/10.35848/1347-4065/abdcb1
[2021] Atomic and Electronic Structures of the Complex of Mg and Screw Dislocations in GaN
DOI: https://doi.org/10.5185/vpoam.2021.0174
[2021] Pan-cancer methylome analysis for cancer diagnosis and classification of cancer cell of origin
DOI: https://doi.org/10.1038/s41417-021-00401-w
[2021] Ab initio-based approach for the oxidation mechanisms at <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:msub><mml:mi>SiO</mml:mi><mml:mn>2</mml:mn></mml:msub></mml:math>/4H-SiC interface: Interplay of dry and wet oxidants during interfacial reaction
DOI: https://doi.org/10.1103/physrevmaterials.5.114601
[2021] Theoretical Study of H Adsorption on Stepped SiC Surface during CVD Growth
DOI: https://doi.org/10.7567/ssdm.2021.k-5-01
[2021] Investigation of Negative Charge Storage Mechanism in the Potassium Ion Electret by First-Principle Calculations
DOI: https://doi.org/10.1541/ieejsmas.141.292
[2021] Study of Adsorption of H on Stepped SiC Surface during CVD Growth
[2021] Defect-free interface between amorphous (Al2O3)1−x(SiO2)x and GaN(0001) revealed by first-principles simulated annealing technique
DOI: https://doi.org/10.1063/5.0047088
[2021] First-principles and thermodynamic analysis for gas phase reactions and structures of the SiC(0001) surface under conventional CVD and Halide CVD environments
DOI: https://doi.org/10.35848/1347-4065/ac1127
[2021] Gallium-gallium weak bond that incorporates nitrogen at atomic steps during GaN epitaxial growth
DOI: https://doi.org/10.1016/j.apsusc.2021.149542
[2021] Theoretical study on the effect of H 2 and NH 3 on trimethylgallium decomposition process in GaN MOVPE
DOI: https://doi.org/10.35848/1347-4065/abf089
[2021] Progress in Modeling Compound Semiconductor Epitaxy: Unintentional Doping in GaN MOVPE
DOI: https://doi.org/10.1021/acs.cgd.0c01564

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AI 要約（直近 5 年の研究成果）

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関連研究室(8 件)

研究成果（65 件）

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