Tetsuo Narita 研究室

主宰者：Tetsuo Narita

名古屋大学

AI 要約（直近 5 年の研究成果）

本研究室は、次世代の電力デバイスを実現するためのGaN（窒化ガリウム）半導体の研究を行っています。特に、GaNを用いた高効率なパワートランジスタやダイオードの開発に取り組んでおり、電動車の駆動システムや省エネルギー電源など、実用的な応用を目指しています。研究の中心は、GaN結晶にイオン注入によって不純物を導入し、その後の加熱処理（特に高圧窒素雰囲気下での加熱）によって電気的性質を制御する技術にあります。具体的には、マグネシウムやシリコンなどの元素をGaN内に注入して、p型やn型といった電気伝導特性を持つ領域を形成しています。研究では、注入したイオンの拡散を抑制したり、結晶内の欠陥を回復させたりするメカニズムを明らかにしています。また、デバイスの表面に酸化膜を形成したときに生じるトラップ準位や界面状態を詳しく分析し、電子の移動度を向上させて高速・低損失な動作を実現する技術開発も進めています。これらの研究を通じて、GaN半導体の材料特性を原子レベルで理解し、デバイス製造プロセスを最適化することで、より高性能で信頼性の高い電力変換システムの実現に貢献しています。

※ AI（Claude）が、公開されている論文要旨から研究の問い・手法・主要な発見を事実情報として抽出・再構成して自動生成しています。誤りを含む可能性があるため、正確性は研究室公式情報でご確認ください。

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研究成果（78 件）

[2026] Investigation of Coulomb scattering centers using a substrate bias effect in n -channel metal–oxide–semiconductor field-effect transistors with AlSiO/AlN/ p -type GaN gate structures
DOI: https://doi.org/10.1063/5.0324229
[2026] Negative-bias temperature instability in AlSiO/p-type GaN metal-oxide-semiconductor field-effect transistors with ultrathin AlN interfacial layer
DOI: https://doi.org/10.1063/5.0325347
[2026] Electrical activity of Mg clustering at nanoscale defects induced by N ion implantation in GaN
DOI: https://doi.org/10.1063/5.0335166
[2026] Behavior of excess donor-like defects induced by implantation of various ion species and subsequent annealing in n-type GaN layers
DOI: https://doi.org/10.35848/1347-4065/ae396a
[2026] 10 kW inverter with vertical-GaN trench MOSFETs and its operation instability related to MOS interface
DOI: https://doi.org/10.1016/j.microrel.2026.116124
[2026] Electrical activity of Mg clustering at nanoscale defects induced by N ion implantation in GaN
DOI: https://doi.org/10.48505/nims.6368
[2026] Hole trapping and emission behavior near the valence band edge at an AlSiO/ p -type GaN interface revealed by repeated temperature-dependent C – V measurements
DOI: https://doi.org/10.1063/5.0325306
[2025] Characterization of MOS Channels Having AlSiO/AlN/GaN Gate Structures on m-plane and c-plane: Mobility, Threshold Voltage, and its Stability
DOI: https://doi.org/10.1109/drc66027.2025.11105751
[2025] Impacts of ultra-high-pressure annealing on undoped and ion-implanted GaN studied by photoluminescence measurements
DOI: https://doi.org/10.1063/5.0266700
[2025] High Mg activation with suppressed Mg diffusion during ultra-high-pressure annealing via sequential nitrogen-ion implantation in Mg-ion-implanted GaN
DOI: https://doi.org/10.35848/1882-0786/ade3ac

続きを表示（残り 68 件）

[2025] Development for long lifetime and high efficiency DUV LEDs
DOI: https://doi.org/10.1117/12.3044635
[2025] Impact of Implanted Ion Species on Excess Donors Introduced in n-type GaN Epitaxial Layers
DOI: https://doi.org/10.7567/ssdm.2025.m-4-01
[2025] Depth‐Resolved Photoluminescence for Channeling Implantation of Mg or Mg/N Ions into GaN after Ultra‐High‐Pressure Annealing
DOI: https://doi.org/10.1002/pssb.202500029
[2025] Guest Editorial Special Issue on 22nd International Workshop on Junction Technologies
DOI: https://doi.org/10.1109/jeds.2025.3650320
[2025] Avalanche durability of high-voltage GaN p – n diodes with tunnel junctions as anode contacts
DOI: https://doi.org/10.1063/5.0300544
[2025] Depth Analyses of Acceptor and Compensating Donor Concentrations in Mg‐Ion‐Implanted GaN with Ultra‐High‐Pressure Annealing
DOI: https://doi.org/10.1002/pssb.202400613
[2025] Detection of charge transition level of near-surface hydrogen interstitials introduced into Mg-ion-implanted GaN by annealing
DOI: https://doi.org/10.35848/1347-4065/ae0630
[2025] Structure of the very first atomic layer of Ga oxide on GaN at GaN oxidation front
DOI: https://doi.org/10.1063/5.0274521
[2024] Reduction in Gap State Density near Valence Band Edge at Al2O3/p‐type GaN Interface by Photoelectrochemical Etching and Subsequent SiO2 Cap Annealing
DOI: https://doi.org/10.1002/pssb.202400025
[2024] Depth Analyses of Mg‐Acceptor and Si‐Donor Concentrations in GaN by Combining Stepwise Etching and Photoluminescence
DOI: https://doi.org/10.1002/pssb.202300528
[2024] Impurity reduction in lightly doped n-type gallium nitride layer grown via halogen-free vapor-phase epitaxy
DOI: https://doi.org/10.1063/5.0191774
[2024] High Channel Mobility and Stable E-Mode Operation in AlSiO/AlN/m-Plane P-Type GaN MOSFETs with Little Temperature Dependence of the Threshold Voltage
DOI: https://doi.org/10.1109/iedm50854.2024.10873525
[2024] Rapid Mg substitution to Ga-sites and slow defect recovery revealed by depth-resolved photoluminescence in Mg/N-ion-implanted GaN
DOI: https://doi.org/10.1063/5.0232083
[2024] A distinctive bound exciton line induced by electron-beam irradiation and subsequent annealing of an unintentionally doped GaN layer
DOI: https://doi.org/10.35848/1347-4065/ad918a
[2024] Engineered interface charges and traps in GaN MOSFETs providing high channel mobility and E-mode operation
DOI: https://doi.org/10.35848/1347-4065/ad8c4f
[2024] Engineering of Channel Mobility and Threshold Voltage in AlSiO/AlN/p-type GaN Metal–Oxide–Semiconductor Field-Effect Transistors
DOI: https://doi.org/10.7567/ssdm.2024.d-7-01
[2024] First-principles study of recombination-enhanced migration of an interstitial magnesium in gallium nitride
DOI: https://doi.org/10.1103/physrevb.110.l081201
[2024] Suppression of positive bias instability by inserting polarized AlN interlayer at AlSiO/p-type GaN interface in metal–oxide–semiconductor field-effect transistor
DOI: https://doi.org/10.1063/5.0214698
[2024] Extraction of gap states in AlSiO/AlN/GaN metal-oxide-semiconductor field-effect transistors using the multi-terminal capacitance–voltage method
DOI: https://doi.org/10.1063/5.0191066
[2024] Characterization of Shockley-Read-Hall recombination centers created by proton irradiation into GaN p+/n- and p-/n+ junctions
DOI: https://doi.org/10.1117/12.2691563
[2024] A High Channel Mobility and a Normally‐off Operation of a Vertical GaN Metal‐Oxide‐Semiconductor Field‐Effect Transistors using an AlSiO/AlN Gate Stack Structure on m‐plane Trench Sidewall
DOI: https://doi.org/10.1002/pssr.202400010
[2024] Impacts of vacancy complexes on the room-temperature photoluminescence lifetimes of state-of-the-art GaN substrates, epitaxial layers, and Mg-implanted layers
DOI: https://doi.org/10.1063/5.0201931
[2024] Impact of Sequential N Ion Implantation on Extended Defects and Mg Distribution in Mg Ion‐Implanted GaN
DOI: https://doi.org/10.1002/pssr.202400074
[2024] Transport Properties in GaN Metal–Oxide–Semiconductor Field‐Effect Transistor Almost Free of Interface Traps with AlSiO/AlN/p‐Type GaN Gate Stack
DOI: https://doi.org/10.1002/pssr.202400141
[2023] Comprehensive Study of Electron Conduction and Its Compensation for Degenerate Si‐Doped AlN‐Rich AlGaN
DOI: https://doi.org/10.1002/pssr.202300055
[2023] Polarization Engineering in AlSiO/p-type GaN MOSFETs Using AIN Interlayers Formed by Plasma-Enhanced Atomic Layer Deposition
DOI: https://doi.org/10.1109/iedm45741.2023.10413714
[2023] Development of large area SOI pixel sensor "XRPIX-X" with pinned depleted diode structure
DOI: https://doi.org/10.1109/nssmicrtsd49126.2023.10338554
[2023] Design and fabrication of vertical GaN junction barrier Schottky rectifiers using Mg ion implantation
DOI: https://doi.org/10.35848/1347-4065/acec69
[2023] Investigation of gap states near conduction band edge in vicinity of interface between Mg-ion-implanted GaN and Al2O3 deposited after ultra-high-pressure annealing
DOI: https://doi.org/10.35848/1347-4065/ace3d1
[2023] Investigation of gap states near conduction band edge in vicinity of interface between Mg-ion-implanted GaN and Al2O3 deposited after ultra-high-pressure annealing
[2023] Over 200 cm2 V−1 s−1 of electron inversion channel mobility for AlSiO/GaN MOSFET with nitrided interface
DOI: https://doi.org/10.35848/1882-0786/ace33c
[2023] Annealing properties of vacancy-type defects in ion implanted GaN during ultra-high-pressure annealing studied by using a monoenergetic positron beam
DOI: https://doi.org/10.1117/12.2646233
[2023] Pressure Effect on Diffusion of Native Defects and Mg Impurity in Mg‐Ion‐Implanted GaN during Ultrahigh‐Pressure Annealing
DOI: https://doi.org/10.1002/pssr.202300035
[2023] Effects of proton irradiation-induced point defects on Shockley–Read–Hall recombination lifetimes in homoepitaxial GaN p–n junctions
DOI: https://doi.org/10.1063/5.0141781
[2023] Reliability issues of gate oxides and $p-n$ junctions for vertical GaN metal–oxide–semiconductor field-effect transistors (Invited)
DOI: https://doi.org/10.1109/irps48203.2023.10118047
[2022] Effects of Hydrogen Incorporation on Mg Diffusion in GaN‐Doped with Mg Ions via Ultra‐High‐Pressure Annealing
DOI: https://doi.org/10.1002/pssb.202200235
[2022] Relationship of carbon concentration and slow decays of photoluminescence in homoepitaxial n-type GaN layers
DOI: https://doi.org/10.35848/1347-4065/ac79ec
[2022] Effect of Ultra‐High‐Pressure Annealing on Defect Reactions in Ion‐Implanted GaN Studied by Positron Annihilation
DOI: https://doi.org/10.1002/pssb.202200183
[2022] Detection of defect levels in vicinity of Al2O3/p-type GaN interface using sub-bandgap-light-assisted capacitance–voltage method
DOI: https://doi.org/10.1063/5.0109117
[2022] Mg-implanted vertical GaN junction barrier Schottky rectifiers with low on resistance, low turn-on voltage, and nearly ideal nondestructive breakdown voltage
DOI: https://doi.org/10.1063/5.0106321
[2022] Process engineering of GaN power devices via selective-area p-type doping with ion implantation and ultra-high-pressure annealing
DOI: https://doi.org/10.1063/5.0107921
[2022] Identification of type of threading dislocation causing reverse leakage in GaN p–n junctions after continuous forward current stress
DOI: https://doi.org/10.1038/s41598-022-05416-3
[2022] Effect of Ultra‐High‐Pressure Annealing on Defect Reactions in Ion‐Implanted GaN Studied by Positron Annihilation
DOI: https://doi.org/10.1002/pssb.202270028
[2022] Improvement of Channel Mobility in AlSiO/GaN MOSFETs using Thin Interfacial Layers to Reduce Border Traps
DOI: https://doi.org/10.7567/ssdm.2022.j-6-01
[2022] Atomic resolution analysis of extended defects and Mg agglomeration in Mg-ion-implanted GaN and their impacts on acceptor formation
DOI: https://doi.org/10.1063/5.0097866
[2021] Impact ionization coefficients and critical electric field in GaN
DOI: https://doi.org/10.1063/5.0050793
[2021] Contribution of the carbon-originated hole trap to slow decays of photoluminescence and photoconductivity in homoepitaxial n-type GaN layers
DOI: https://doi.org/10.1063/5.0041287
[2021] Formation of highly vertical trenches with rounded corners via inductively coupled plasma reactive ion etching for vertical GaN power devices
DOI: https://doi.org/10.1063/5.0040920
[2021] Behaviors of vacancy-type defects in Mg-implanted GaN during ultra-high-pressure annealing studied by using a monoenergetic positron beam
DOI: https://doi.org/10.1117/12.2575972
[2021] Maximum standardized uptake value of the primary tumor does not improve candidate selection for sublobar resection
DOI: https://doi.org/10.1016/j.jtcvs.2021.06.053
[2021] Efficiency improvement of AlGaN-based deep-ultraviolet light-emitting diodes and their virus inactivation application
DOI: https://doi.org/10.35848/1347-4065/ac10f2
[2021] Photoionization cross section ratio of nitrogen-site carbon in GaN under sub-bandgap-light irradiation determined by isothermal capacitance transient spectroscopy
DOI: https://doi.org/10.35848/1882-0786/ac16ba
[2021] Analysis of intrinsic reverse leakage current resulting from band-to-band tunneling in dislocation-free GaN p–n junctions
DOI: https://doi.org/10.35848/1882-0786/ac2a03
[2021] Effects of the sequential implantation of Mg and N ions into GaN for p-type doping
DOI: https://doi.org/10.35848/1882-0786/ac2ae7
[2021] Breakdown Electric Field of GaN p+-n and p-n+Junction Diodes With Various Doping Concentrations
DOI: https://doi.org/10.1109/led.2021.3125328
[2021] Mg-implanted bevel edge termination structure for GaN power device applications
DOI: https://doi.org/10.1063/5.0039183
[2021] X-ray photoelectron spectroscopy study on effects of ultra-high-pressure annealing on surface of Mg-ion-implanted GaN
DOI: https://doi.org/10.35848/1347-4065/abe609
[2021] Temperature dependence of impact ionization coefficients of electrons and holes in GaN
[2021] Analysis of channel mobility in GaN-based metal-oxide-semiconductor field-effect transistors
DOI: https://doi.org/10.1063/5.0040700
[2021] Analysis of mobility limitation factors in AlSiO/p-type GaN-based MOSFETs
[2021] Contribution to electrical properties of carrier recombination of Slow decay in GaN epilayers
[2021] Diffusion of Mg and H atoms in Mg-implanted GaN by ultra-high-pressure annealing
[2021] Generation of hole trap in p-GaN layer by forward current injection
[2021] Nitrogen-displacement-related electron traps in n-type GaN grown on a GaN freestanding substrate
[2021] Nitrogen-displacement-related electron traps in n-type GaN grown on a GaN freestanding substrate
DOI: https://doi.org/10.1063/5.0035235
[2021] Increase of reverse leakage current at homoepitaxial GaN p-n junctions induced by continuous forward current stress
DOI: https://doi.org/10.1063/5.0053139
[2021] Design and demonstration of nearly-ideal edge termination for GaN p–n junction using Mg-implanted field limiting rings
DOI: https://doi.org/10.35848/1882-0786/ac0b09
[2021] Inhibition of Mg activation in p-type GaN caused by thin AlGaN capping layer and impact of designing hydrogen desorption pathway
DOI: https://doi.org/10.35848/1882-0786/ac057d

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AI 要約（直近 5 年の研究成果）

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関連研究室(8 件)

研究成果（78 件）

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